NEC MEMORY
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD4564323 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words x 32 bits × 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
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PD4564323
64M-bit
PD4564323
864-bit
86-pin
NEC MEMORY
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD4564323 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words x 32 bits × 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
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PD4564323
64M-bit
PD4564323
864-bit
86-pin
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uPD4564323G5-A10BL-9JH
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4564323 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 524,288 words x 32 bits × 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
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PD4564323
64M-bit
PD4564323
864-bit
86-pin
uPD4564323G5-A10BL-9JH
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pd4564323
Abstract: UPD4564323G5-A10B-9JH
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4564323 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 524,288 words x 32 bits × 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
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PD4564323
64M-bit
PD4564323
864-bit
86-pin
UPD4564323G5-A10B-9JH
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NEC JAPAN
Abstract: UPD4584 uPD4564163G5 NEC 1010 uPD4564841G5 electric scheme ca 400 w NEC JAPAN IC
Text: CORPORATION JAPAN July 2000 TRQ-00-07-339 64M SDRAM RELIABILITY REPORT This report contains reliability data on the following CMOS Synchronous DRAM products fabricated and assembled at the NEC facilities in Japan . µ PD4564441G5 Rev. “L“ µ PD4564841G5 Rev. “L”
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TRQ-00-07-339
PD4564441G5
PD4564841G5
PD4564163G5
Am241,
NEC JAPAN
UPD4584
uPD4564163G5
NEC 1010
uPD4564841G5
electric scheme ca 400 w
NEC JAPAN IC
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CDA 10.7
Abstract: BD163
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD4564323 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL EO Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words x 32 bits × 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
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PD4564323
64M-bit
PD4564323
864-bit
86-pin
CDA 10.7
BD163
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pd4564323
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD4564323 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words x 32 bits × 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
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PD4564323
64M-bit
PD4564323
864-bit
86-pin
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MC-4516CC726
Abstract: MC-4516CC726F-A10 MC-4516CC726F-A80
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CC726 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : µPD4564841 Rev. E are assembled.
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MC-4516CC726
16M-WORD
72-BIT
MC-4516CC726
PD4564841
MC-4516CC726F-A10
MC-4516CC726F-A80
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MC-4516CD646-A10
Abstract: MC-4516CD646 MC-4516CD646F-A10 MC-4516CD646F-A80 a1046H
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 64M SDRAM : µPD4564841 Revision E are assembled.
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MC-4516CD646
16M-WORD
64-BIT
MC-4516CD646
PD4564841
MC-4516CD646-A10
MC-4516CD646F-A10
MC-4516CD646F-A80
a1046H
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-4516CC724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64 M SDRAM : ¿/PD4564841 are assembled.
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MC-4516CC724
16M-WORD
72-BIT
MC-4516CC724
uPD4564841
MC-4516
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458AB644 3 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458AB644 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64 M SDRAM : //PD4564821 are assembled.
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MC-458AB644
64-BIT
MC-458AB644
uPD4564821
MC-458AB644-A10
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8208 ns
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-4516DA72 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ¿/PD4564441 are assembled.
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MC-4516DA72
16M-WORD
72-BIT
MC-4516DA72
uPD4564441
MC-4516DA72-A10
8208 ns
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max100MHZ
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458AB64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458AB64S is a 8,388,608 words by 64 bits synchronous dynamic RAM module(Small Outline DIMM) on which 8 pieces of 64 M SDRAM : ¿/PD4564821 are assembled.
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MC-458AB64S
64-BIT
MC-458AB64S
uPD4564821
max100MHZ
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LX 2262
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / PD4564441,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random -access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 (word x bit x bank , respectively.
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uPD4564441
uPD4564841
uPD4564163
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
LX 2262
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-458AA724 8 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458AA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64 M SDRAM : ¿/PD4564821 are assembled.
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MC-458AA724
72-BIT
MC-458AA724
uPD4564821
MC-458AA724-A10
MC-458Awing
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458CA724 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64 M S D R A M : //PD4564841 are assembled.
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MC-458CA724
72-BIT
MC-458CA724
uPD4564841
0i002
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB646 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M
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MC-454CB646
64-BIT
MC-454CB646
uPD4564163
MC-454CB646-A80
MC-454C
B646-A10
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MC-4516CD645FA-A1
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD645 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of
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MC-4516CD645
16M-WORD
64-BIT
MC-4516CD645
uPD4564841
MC-4516CD645-A1
MC-4516CD645FA-A1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-45V8AD64S 8M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-45V8AD64S is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module (small
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MC-45V8AD64S
64-BIT
MC-45V8AD64S
uPD4565161
sup64-71
64M-BIT
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cma 10005
Abstract: wn 5461 C458C MC-458CB644
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CB644 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB644 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M
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MC-458CB644
64-BIT
MC-458CB644
uPD4564841
C-458C
B644-A10
B644-A12
cma 10005
wn 5461
C458C
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a1001h
Abstract: C458D
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458DA724 8M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-458DA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M SDRAM : /¿PD4564841 are assembled.
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MC-458DA724
72-BIT
MC-458DA724
uPD4564841
C-458DA724-A80
C-458D
A724-A10
a1001h
C458D
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: /¿PD4564163 (Revision E) are assembled.
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MC-454CB64S
64-BIT
MC-454CB64S
uPD4564163
MC-454CB64S-A80
MC-454CB64S-A10
MC-454CB6
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ¿¿PD4564441 Revision E are assembled.
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MC-4516DA726
72-BIT
MC-4516DA726
uPD4564441
C-4516DA726-A80
C-4516DA726-A10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CC725 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC725 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
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MC-4516CC725
16M-WORD
72-BIT
MC-4516CC725
uPD4564841
MC-4516CC725-A1
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