PD75116
Abstract: NEC 75116 IC-7529B PD7228 uPD75112 uPD75108 uPD75116 uPD75P116 75108CW dot matrix printer schematic diagram
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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pd446
Abstract: PD7228 uPD75108F uPD75116 uPD75116F uPD75P116 IC-2810B
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PD75108
Abstract: DC MOTOR HL-1 75p116 PD7228 PD6323 75P116GF dot matrix printer circuit diagram datasheet pd446 177Fh PD75104A
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD75104, 75106, 75108 4-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION µPD75108 is a 4-bit single-chip microcomputer integrating timer/event counters, serial interface, and vector interrupt function, in addition to a CPU, ROM, RAM, and I/O ports, on a single chip. Operating at high speeds,
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PD75104,
PD75108
DC MOTOR HL-1
75p116
PD7228
PD6323
75P116GF
dot matrix printer circuit diagram datasheet
pd446
177Fh
PD75104A
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GR281
Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.
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GR281
GR281
2000/95/EC
2716 eprom
4016 RAM
2716 eprom datasheet
memory 2716
eprom 2716
pd446
static ram 4802
2716 2k eprom retention
memory ram 6116
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PTH02
Abstract: fmem NEC 75116 application note 6332 prom 75116GF hl wire cutting system IC-7529B P1233 uPD75116 uPD75108
Text: µPD75112, 75116 4-Bit Single-Chip Microcomputer Data Sheet Description The µPD75116 is one of the 4-bit single-chip microcomputer 75X series. The µPD75116 is a product with the extended ROM capacity of the µPD75108. In addition of high-speed operations,
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PD75112,
PD75116
PD75108.
IEI-1209)
PTH02
fmem
NEC 75116 application note
6332 prom
75116GF
hl wire cutting system
IC-7529B
P1233
uPD75116
uPD75108
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75p116
Abstract: PD7228 uPD75108cw uPD75108GF uPD75104 uPD75106 uPD75108 uPD75P108B IEM-922 uPD751XX
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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IEM-922
Abstract: PD7228 IEM922 8224B uPD75108F uPD75116 uPD75116F uPD75P116 UPD284 hl wire cutting system
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD75108F,75112F,75116F 4-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The µPD75116F offers high-speed operation tCY = 1.91 µ s at a low supply voltage (VDD = 2.7 V) which is not possible with the µPD75116. It has the same functions as, and is pin compatible with, the µPD75116, allowing low voltage sets to be developed
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PD75108F
75112F
75116F
PD75116F
PD75116.
PD75116,
PD75P116*
IEM-922
PD7228
IEM922
8224B
uPD75108F
uPD75116
uPD75116F
uPD75P116
UPD284
hl wire cutting system
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44646092, 44646182, 44646362, 44646093, 44646183, 44646363 72M-BIT DDR II+ SRAM 2.0 & 2.5 Cycle Read Latency 2-WORD BURST OPERATION Description The μPD44646092 and μPD44646093 are 8,388,608-word by 9-bit, the μPD44646182 and μPD44646183 are
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PD44646092,
72M-BIT
PD44646092
PD44646093
608-word
PD44646182
PD44646183
304-word
18-bit
PD44646362
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4464 ram
Abstract: D4464 D446 D446* RAM pd446 UPD446
Text: SEC ¿/PD4464 8 ,1 9 2 x 8 -B IT S T A T IC CMOS RAM NEC Electronics Inc. D e sc rip tio n P in C o n fig u r a t io n The*/PD4464 is a h ig h -sp e e d 8.192-w ord by 8-bit static R A M fabricated with advanced silicon -ga te technology. Full C M O S storage ce lls w ith six transistors m ake the
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uPD4464
192-word
jPD4464
The//PD4464
28-pin
/PD4464
4464 ram
D4464
D446
D446* RAM
pd446
UPD446
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UPD41258G10
Abstract: UPD41254 upd41256l
Text: NEC N E C ELECTRONICS INC 72C D • b427525 DDObMMl 3 ■ SURFACE MOUNT DEVICES Introduction M em ory Surface mount technology SMT is an idea whose time has come. NEC anticipated the current trend and now offers an exceptionally broad choice of com ponents in suface mount packages. Four factors
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b427525
uPD41254L-12
uPD41254L-15
uPD41256L-12
uPD41256L-15
uPD41257L-12
uPD41257L--15
uPD41258G-10
uPD41258G-12
uPD41258G-15
UPD41258G10
UPD41254
upd41256l
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LU1PA
Abstract: d4464 PD4464 pd446 d 4464 ud44
Text: MEC //P D 44 64 8,192 X 8-B IT STATIC CMOS RAM NEC Electronics Inc. Description Pin Configuration The/PD4464 is a high-speed 8,192-word by 8-b it static RAM fabricated with advanced siiicon-gate technology. Full C M O S storage cells with six transistors make the
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uPD4464
192-word
28-pin
3-001761A
LU1PA
d4464
PD4464
pd446
d 4464
ud44
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PD446C
Abstract: PD446 d446c HPD446C PD446G-45 HPD446C-2 JPD446C-1 1317I PD446C cmos UPD446
Text: PD446 2,048 X 8-BIT STATIC CM OS RAM NEC NEC Electronics Inc. Revision 3 D e sc rip tio n Pin C o n fig u ra tio n T h e ;j P D 4 4 6 is a h ig h -s p e e d , lo w -po w er, 2 04 8 -w o rd by 8b it s ta tic C M O S R A M fa b ric a te d w ith a d v a n c e d s ilic o n
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3-001843A
PD446C
PD446
d446c
HPD446C
PD446G-45
HPD446C-2
JPD446C-1
1317I
PD446C cmos
UPD446
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MB8416A-15
Abstract: 8410A 8416a MB8416A-12 MB8416A-12U15L
Text: F U JIT S U MOS Memories m M B 8 4 1 6 A -1 2 , M B 8416A -12L , M B 8 4 16 A -1 5, M B 8410A -15L CM O S 16,384-Bit Static Random Access Memory Description The Fujitsu MB8416A is a 2048-word by 8-bit static random ac cess memory fabricated with CMOS silicon gate process. The
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384-Bit
MB8416A
2048-word
MB8416A-15
8410A
8416a
MB8416A-12
MB8416A-12U15L
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NEC d446c
Abstract: d446c-2 d446c PD446C d446c-2 RAM PD446C-3 D446* nec D446* RAM MPD446C-3 pd446
Text: SEC NEC Electronics Inc. ¿¿PD446 2 ,0 4 8 X 8-B IT STATIC CMOS RAM Revision 3 Description Pin Configuration The ¿¿PD446 is a high-speed, low-power, 2048-word by 8bit static CMOS RAM fabricated with advanced silicongate CMOS technology. A unique circuitry technique
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uPD446
2048-word
mPD446
fiPD446
24-pin
nPD446
PD446
NEC d446c
d446c-2
d446c
PD446C
d446c-2 RAM
PD446C-3
D446* nec
D446* RAM
MPD446C-3
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NVR2
Abstract: pd446
Text: GREENWICH 2K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • NVR2 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Program RAM No limit to number of programming cycles Fits standard 24-pin socket
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24-pin
PD446
NVR2
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ram 8416
Abstract: No abstract text available
Text: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout
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GR281-4
24-pin
GR281
PD446
ram 8416
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B8416
Abstract: MB8416-20L MB8416
Text: F U JIT S U MB8416-20 MB8416-20L M IC R O E L E C T R O N IC S . IN C. CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY ^ ¿4 Í 4 L C £- DESCRIPTION The Fujitsu M B8416 is a 2048 word by 8-bit static random ac cess m em ory fabricated w ith high density, high reliability Com ple
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16384-BIT
B8416
MB8416-20/MB8416-20L
MB6416-20/MB8416-20L
MB8416-20
MB8416-20L
MB8416
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PD446C
Abstract: 446G-25 d446c 446G-45 pd446 HPD446C HPD446C-2 JPD446C-1 UPD446 PD446G-45
Text: PD446 2,048 X 8-BIT STATIC CMOS RAM NEC NEC Electronics Inc. Revision 3 Description Pin Configuration T h e ;j P D 4 4 6 is a h ig h -s p e e d , lo w -po w er, 2 04 8 -w o rd by 8b it s ta tic C M O S R A M fa b ric a te d w ith a d v a n c e d s ilic o n
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3-001843A
///y/////777
PD446C
446G-25
d446c
446G-45
pd446
HPD446C
HPD446C-2
JPD446C-1
UPD446
PD446G-45
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Untitled
Abstract: No abstract text available
Text: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM
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GR281
24-pin
GR281
PD446,
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D4464
Abstract: 4464 ram d446 PD4464 D446* nec diagram rice lights LTGe pd446 d4464ac PD44
Text: SEC /¿PD 4464 8 ,1 9 2 x 8 - B IT S T A T IC CM O S RAM NEC Electronics Inc. Description Pin Configuration PD4464 is a high-speed 8.192-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Full CMOS storage cells with six transistors make the
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uPD4464
192-word
J/PD4464
The/jPD4464
28-pln
28-Pin
D4464
4464 ram
d446
PD4464
D446* nec
diagram rice lights
LTGe
pd446
d4464ac
PD44
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MM3218
Abstract: No abstract text available
Text: EBHNWICH INSTRUMENTS LTD * Plug-in replacement for Static R A M * 10 years data retention * N o erasure required * Fast power down * Functions as Data o r Program R A M * N o limit to number of programming cycles * Standard 24-pin J E D E C pinout G R 2 81 is 2 kilobyte of non-volatile m em ory w hich is
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24-pin
15JUS.
DA146NWTel:
MM3218
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gr281
Abstract: static ram 4802 pd446 4016 RAM
Text: GREENWICH INSTRUMENTS USA • Plug-in replacement for Static RAM • 10 years data retention • No erasure required • Fast power down • Functions as Data or Program RAM • No limit to number of programming cycles • Standard 24-pin JEDEC pinout GR281 is 2 kilobyte of non-volatile memory which is pin-compatible
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24-pin
GR281
static ram 4802
pd446
4016 RAM
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Untitled
Abstract: No abstract text available
Text: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout
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GR281-4
24-pin
GR281
PD446
GR281
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MB8416-20L
Abstract: MB8416-20 TC5517 MB8416 HM6116 PD446
Text: F U J IELECTRO T S U NICS INC. _ M ICRO CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY MB8416-20 MB8416-20L DESCRIPTION T h e F u jits u M B 8 4 1 6 is a 2048 w o rd b y 8 -b it s ta t ic ra n d o m a c c e s s m e m o ry fa b ric a te d w ith h ig h d e n s ity , h ig h re lia b ility C o m p le
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16384-BIT
MB8416
MB8416-20:
MB8416-20-L:
MB8416-20L:
TheA02
100I2
54ITYP
32PLCS
MB8416-20L
MB8416-20
TC5517
HM6116
PD446
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