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    PD434 Price and Stock

    Amphenol Aerospace JT06RE-16-6PD(434)

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    DigiKey JT06RE-16-6PD(434) Bulk 6
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    Amphenol Aerospace JT00RE-14-15PD(434)

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    Amphenol Aerospace JT00RE-16-35PD(434)

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    DigiKey JT00RE-16-35PD(434) Bulk 5
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    Amphenol Aerospace JT00RE-20-16PD(434)

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    Amphenol Aerospace JT00RE-24-61PD(434)

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    DigiKey JT00RE-24-61PD(434) Bulk 4
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    PD434 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PD43-472M API Delevan SMT Power Choke Core Original PDF
    PD43-473K API Delevan SMT Power Choke Core Original PDF

    PD434 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    uPD434008LE-25

    Abstract: IC-8528 uPD434008-20 IC852 upd434008 PD434008LE
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD434008 4M-BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The µPD434008 is a high speed, low power, 4 194 304 bits 524 288 words by 8 bits CMOS static RAM. The µPD434008 is packed in 36-pin plastic SOJ. Features


    Original     		PDF PD434008 512K-WORD PD434008 36-pin PD434008LE-20 PD434008LE-25 uPD434008LE-25 IC-8528 uPD434008-20 IC852 upd434008 PD434008LE

    IC-8527

    Abstract: IC-2996 UPD434004 k 2996 PD434004
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD434004 4M-BIT CMOS FAST STATIC RAM 1M-WORD BY 4 BITS Description The µPD434004 is a high speed, low power, 4 194 304 bits 1 048 576 words by 4 bits CMOS static RAM. The µPD434004 is packed in 32-pin plastic SOJ. Features


    Original     		PDF PD434004 PD434004 32-pin PD434004LE-20 PD434004LE-25 IC-8527 IC-2996 UPD434004 k 2996

    PD434001

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD434001 4M-BIT CMOS FAST STATIC RAM 4M-WORD BY 1-BIT Description The µ PD434001 is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. The µ PD434001 is packed in 32-pin plastic SOJ. Features


    Original     		PDF PD434001 PD434001 32-pin PD434001LE-20 PD434001LE-25 M12028EJ1V0DS00

    DS1304

    Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
    Text: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ


    Original     		PDF CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D DS1304 aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT

    PD73-103K

    Abstract: 823k PD104-472M PD54-473K 683K PD104-273K PD75-473K PD104 PD105 PD43-152M
    Text: PD Series SMT Power Choke Core * Test Measurement Frequency Values < 10µH tested @ 7.96MHz; Values ≥10uH @ 0.100 MHz 1.0 KHz Mechanical Configuration Units designed for Surface Mounting Terminals Solder Coated with SN63 solder Core Construction High Resistivity Ferrite


    Original     		PDF 96MHz; PD105-563K PD105-683K PD105-823K PD105-104K PD105-124K PD105-154K PD105-184K PD105-224K PD105-274K PD73-103K 823k PD104-472M PD54-473K 683K PD104-273K PD75-473K PD104 PD105 PD43-152M

    PD23C64020

    Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
    Text: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed


    Original     		PDF X13769XJ2V0CD00 A10BL 8K/64 256M5 PD45256441 54-pin PC133 PC100 MC-22000 PD23C64020 PD45D128442 4M84 PD45D128842 0443 IC PD23C64000AL 45V16A PD264 A80L

    Untitled

    Abstract: No abstract text available
    Text: PD434001 4,194,304 X 1-Bit Static CMOS RAM W NEC Electronics Inc. Description Pin Configuration The /j PD434001 is a 4,194,304-word by 1-bit static RAM fabricated with advanced silicon-gate technology. A unique design with CMOS peripheral circuits and N-channel memory cells, the PD434001 is a high­


    OCR Scan     		PDF uPD434001 PD434001 304-word juPD434001 32-Pin jiPD434001 83YL-7977A -6643A jLfPD434001

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT \i PD434008 4 M -BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The /¿PD434008 is a high speed, low p o w e r, 4 194 304 b its 524 288 w o r d s by 8 bits C M O S sta tic RAM T h e /¿PD434008 is packed in 36-pin p la s tic SOJ.


    OCR Scan     		PDF uPD434008 512K-WORD PD434008 36-pin uPD434008LE-20 uPD434008LE-25

    ITE 8527

    Abstract: IC-8527
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT \i PD434004 4 M -BIT CMOS FAST STATIC RAM 1 M-W ORD BY 4 BITS Description The /¿PD434004 is a h ig h speed, low p o w e r , 4 194 304 b its 1 048 576 w o r d s by 4 bits C M O S s ta tic RAM T h e /¿PD434004 is packed in 32-pin p la s tic SOJ.


    OCR Scan     		PDF uPD434004 PD434004 32-pin PD434004LE-20 ITE 8527 IC-8527

    static ram 512K

    Abstract: IC-299B
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¡1 PD434008 4M-BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The /PD434008 is a high speed, low power, 4 194 304 bits 524 288 words by 8 bits CMOS static RAM. The //PD434008 is packed in 36-pin plastic SOJ.


    OCR Scan     		PDF uPD434008 512K-WORD /JPD434008 //PD434008 36-pin 434008LE-25 040-O /jPD434008. /XPD434008 //PD434008LE: static ram 512K IC-299B

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD434004 4M-BIT CMOS FAST STATIC RAM 1M-WORD BY 4 BITS D escrip tio n The //PD434004 is a high speed, low power, 4 194 304 bits 1 048 576 w ords by 4 bits CMOS static RAM. The /¿PD434004 is packed in 32-pin plastic SOJ.


    OCR Scan     		PDF PD434004 //PD434004 PD434004 32-pin PD434004LE-20 b427S2S GDb42bO //PD434004 /iPD434004. /jPD434004LE:

    Untitled

    Abstract: No abstract text available
    Text: five 10 1992 NEC PD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Description T he ^PD434000 is a 524,288-w ord by 8-bit static RAM fab ricated with advanced silicon-gate technology.


    OCR Scan     		PDF JJPD434000 PD434000 288-w 32-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIM IN A R Y DATA SHEET MOS INTEGRATED CIRCUIT ELECTRON DEVICE /¿PD434004 4 M BIT CM O S FAST STATIC RAM D E S C R IP T IO N The /iP D 434004 is a high-speed, 1048576 words by 4 -bit CMOS static RAM fabricated w ith short channel silicon-gate CMOS process. The ¿ PD434004 is a very high speed device using both an advanced CMOS process and excellent c ircu itry


    OCR Scan     		PDF PD434004 PD434004 juPD434004 uPD434004 32-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT / PD434001 4M -BIT CMOS FAST STATIC RAM 4M-W ORD BY 1-BIT Description The ¿¡PD434001 is a high speed, low pow er, 4 ,1 9 4 ,3 0 4 bits (4 ,1 9 4 ,3 0 4 w o rd s by 1 bit C M O S s ta tic RAM. The ¿¡PD434001 is packed in 32-pin p la s tic SOJ.


    OCR Scan     		PDF PD434001 32-pin uPD434001 LE-20 008tS PD434001. PD434001

    IC-2996

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD434004 4M-BIT CMOS FAST STATIC RAM 1M-WORD BY 4 BITS D e s c rip tio n The /¿PD434004 is a high speed, lo w pow er, 4 194 304 b its 1 048 576 w o rd s by 4 bits CM OS sta tic RAM. The ^PD434004 is packed in 32-pin p la stic SOJ.


    OCR Scan     		PDF uPD434004 PD434004 32-pin pPD434004LE-20 PD434004LE-25 refe05 PD434004. //PD434004LE: IC-2996

    upd434000

    Abstract: D434000GW-55L
    Text: NEC PD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description 524,288-w ord by 8-bit organization Single + 5 -v o lt pow er supply Fully static o peration — no clock or refreshing T TL -com patible inputs and outputs Com m on I/O using three-state outputs


    OCR Scan     		PDF uPD434000 /VPD434000 288-w /JPD434000 32-pin pPD434000 63FM-8622A JUPD434000 JHPD434000 D434000GW-55L

    0829A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT PD434004A 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The ^¡PD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    OCR Scan     		PDF UPD434004A PD434004A 32-pin PD434004ALE-17 PD434004ALE-20 008iC PD434004A PD434004A. jUPD434004ALE 0829A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT PD434004AL 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The ^¡PD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF UPD434004AL PD434004AL 32-pin PD434004ALLE-A17 PD434004ALLE-

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    D434004

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT PD434004A 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The /¿PD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    OCR Scan     		PDF uPD434004A PD434004A 32-pin PD434004ALE-15 PD434004ALE-17 PD434004ALE-20 D434004

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD434016AL 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The /¿PD434016AL is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF uPD434016AL 256K-W 16-BIT 44-pin uPD434016ALLE-A15 uPD434016ALLE-A17 PD434016ALLE-A20

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT U P D 4 3 4 0 1 6 A 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The ,PD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    OCR Scan     		PDF 256K-W 16-BIT uPD434016A 44-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT PD434001 AL 4M -BIT CMOS FAST SRAM 4M -W ORD BY 1-BIT Description The ,PD434001 AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		PDF UPD434001 32-pin PD434001ALLE-A17

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT U P D 4 3 4 0 1 6 A 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ,PD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.


    OCR Scan     		PDF 256K-WORD 16-BIT uPD434016A PD434016A 44-pin M12228EJ5V0DS00