NT-1/4-0-SP-CS5480
Abstract: No abstract text available
Text: 16 M DRAM DATA COLLECTION 4 M-word by 4-bit, Revision A 1997 Document No. M12205XJ1V0IF00 1st edition Date Published January 1997 N Printed in Japan DRAM PROCESS 1 DIE PHOTOGRAPH 2 DIFFERENCES BETWEEN REVISION A AND REVISION L 3 µPD42S16405L, 4216405L
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M12205XJ1V0IF00
PD42S16405L,
4216405L
PD42S17405L,
4217405L
PD42S16405,
PD42S17405,
PD42S16400L,
4216400L
PD42S17400L,
NT-1/4-0-SP-CS5480
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IR35207
Abstract: IR35-207
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16405, 4216405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The µPD42S16405, 4216405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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PD42S16405,
PD42S16405
26-pin
PD42S16405-50,
IR35207
IR35-207
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uPD42S16405LG3-A60-7JD
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO Description The µPD42S16405L, 4216405L are 4,194,304 words by 4 bits CMOS dynamic RAM with optional hyper page mode (EDO).
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Original
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PDF
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PD42S16405L,
4216405L
4216405L
PD42S16405L
26-pin
uPD42S16405LG3-A60-7JD
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Untitled
Abstract: No abstract text available
Text: HOW TO USE DRAM 1994, 1992 1995, 1996 Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
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PDF
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M10339EJ3V0UM00
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Untitled
Abstract: No abstract text available
Text: {PD4216405 4M x 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Product Brief May 1994 Description Pin Configurations The //PD4216405 devices are dynamic CMOS RAMs with an optional hyper-page mode organized as 4,194,304 words by 4 bits. A single-transistor dynamic
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uPD4216405
64-ms
JPD4216405
26-Pin
iPD4216405G3-XX
G3-50-7KD
4216405G
3-70-7KD
//PD4216405LA-50
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿ ¿ P D 4 2 16405 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE D e s c rip tio n The //PD4216405 is a 4,194,304 w o rd s by 4 b its d y n a m ic CM OS RAM w ith o p tio n a l h y p e r page m ode. H yp e r page m od e is a kin d o f th e page m ode and is u seful fo r th e read o p e ra tio n .
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uPD4216405
PD4216405
26-pin
cycles/64
PD4216405-70
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFG641 3.3 V OPERATION 4M -W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFG641F and MC-424LFG641FW are a 4,194,304 words by 64 bits dynamic RAM modules on which
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MC-424LFG641
64-BIT
MC-424LFG641F
MC-424LFG641FW
uPD4216405L
/iPD4265165)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424LFC721 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFC721F and M C-424LFC721FW are a 4,194,304 words by 72 bits dynamic RAM modules on which
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MC-424LFC721
72-BIT
MC-424LFC721F
C-424LFC721FW
uPD4216405L
/iPD4265165)
PD4216405L)
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001107
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 42S 16405L , 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n T h e/iP D 42S 16 405L , 4216405L a re 4 ,1 94,304 words by 4 bits CMOS dynam ic RAM with optional hyper page mode
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16405L
4216405L
uPD42S16405L
uPD4216405L
PD42S16405L
16405L,
4216405L
26-pin
VP15-207-2
001107
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Untitled
Abstract: No abstract text available
Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-424LFC72 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-424LFC72FY and M C-424LFC72FW are 4,194,304 words by 72 bits dynamic RAM modules on which 5
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MC-424LFC72
72-BIT
MC-424LFC72FY
C-424LFC72FW
uPD4265165
uPD4216405L
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424LFG641 3.3 V OPERATION 4M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFG641F and M C-424LFG641FW are a 4,194,304 words by 64 bits dynam ic RAM modules on which
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OCR Scan
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PDF
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MC-424LFG641
64-BIT
MC-424LFG641F
C-424LFG641FW
uPD4216405L
uPD4265165
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MP D 4 2 1 6 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The PD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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16M-BIT
fiPD4216405
tPD4216405
26-pin
cycles/64
/1PD4216405-50
016to
D0S71SS
b45755S
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 1 6 4 0 5 16 M BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE Description The /PD4216405 is a 4,194,304 words by 4 bits dynamic CM OS RAM w ith optional hyper page mode. Hyper page m ode is a kind of the page mode and is useful for the read operation.
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/iPD4216405
26-pin
cycles/64
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PJ 1169
Abstract: No abstract text available
Text: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.
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M10339EJ3V0UM00
PJ 1169
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777T7
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT / ¿P D 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /PD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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/iPD4216405
//PD4216405
26-pin
cycles/64
J/PD4216405-50
/xPD42O
0161o
b427525
20too5
777T7
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-424FC721 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424FC721 is a 4,194,304 words by 72 bits dynamic RAM module on which 18 pieces of 16 M DRAM: ¿¡PD4216405 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
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PDF
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MC-424FC721
72-BIT
MC-424FC721
PD4216405
M168S-50A26
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424FG641 4M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424FG641 is a 4,194,304 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM : ,PD4216405 are assembled.
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MC-424FG641
64-BIT
MC-424FG641
uPD4216405
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-424LFC721 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424LFC721F and M C-424LFC721FW are a 4,194,304 words by 72 bits dynamic RAM modules on which
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OCR Scan
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PDF
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MC-424LFC721
72-BIT
MC-424LFC721F
C-424LFC721FW
uPD4216405L
uPD4265165
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000FC72 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO D e s c rip tio n The M C-424000FC72 is a 4,194,304 words by 72 bits dynamic RAM module on which 18 pieces of 16 M DRAM: ;iP D 4216405 are assembled.
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OCR Scan
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MC-424000FC72
72-BIT
C-424000FC72
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 4 0 5 L , 4 2 1 6 4 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The //PD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs with optional hyper page
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OCR Scan
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PDF
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//PD42S16405L,
4216405L
/iPD42S16405L,
26-pin
/iPD42S16405L-A60,
4216405L-A60
1PD42S16405L-A70,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-424FC721 4M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-424FC721 is a 4,194,304 w ords by 72 bits dynam ic RAM module on which 18 pieces of 16 M DRAM: /¿PD4216405 are assembled. This module provides high density and large quantities of mem ory in a small space w ithout utilizing the surfacemounting technology on the printed circuit board.
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OCR Scan
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PDF
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MC-424FC721
72-BIT
MC-424FC721
uPD4216405
C-424FC721
MG-424FG721
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / / /¿ P D 4 2 S 1 6 4 0 5 , 4 2 1 6 4 0 5 MOS INTEGRATED CIRCUIT 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n The //P D 4 2 S 16 405,4216405 are 4,194,304 words by 4 bits CMOS dynam ic RAMs with optional hyper page mode
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OCR Scan
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PDF
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26-pin
uPD42S16405-50
uPD4216405-50
uPD42Srocesses
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 16 4 0 5 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /¿PD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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OCR Scan
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PDF
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uPD4216405
jxPD4216405
26-pin
cycles/64
//PD4216405-50
673t8
016tS
008tooo2
jjPD42
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a70 8 pin ic
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n The jiPD42S16405L, 4216406L are 4,194,304wocds by 4 bits CMOS dynamic HAM w ith option«! hyperpage mode
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uPD42S16405L
uPD4216405L
jiPD42S16405L,
4216406L
304wocds
/IPD42S16405L
1PD42S16405L,
421S405L
26-pin
a70 8 pin ic
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