resistor 220 ohm
Abstract: capacitor siemens 4700 35 resistor 4700 ohm 200B G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM P220ECT-ND th 2167 20237 P220E
Text: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization
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P220ECT-ND
1-877-GOLDMOS
1522-PTF
resistor 220 ohm
capacitor siemens 4700 35
resistor 4700 ohm
200B
G200
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
P220ECT-ND
th 2167
20237
P220E
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LM7805 smd
Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Text: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest
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PTF081301E
PTF081301F
PTF081301E
PTF081301F
130-watt,
LM7805 smd
BCP56
LM7805
transistor SMD LOA
DD 127 D TRANSISTOR
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PCC103BCT-ND
Abstract: capacitor siemens 4700 35 DD 102 CAPACITOR Siemens Ferrite PA13 0.1 uF 50v CAPACITOR
Text: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5
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PC56106-ND
PCC103BCT-ND
P5182-ND
220ECT-ND
1-877-GOLDMOS
1522-PTF
PCC103BCT-ND
capacitor siemens 4700 35
DD 102 CAPACITOR
Siemens Ferrite
PA13
0.1 uF 50v CAPACITOR
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Transistor 4733
Abstract: capacitor siemens 4700 35 BDS31314-6-452 CGS C14
Text: PRE-RELEASE PTF 10134* 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched common source N–channel enhancement–mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime
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P4525-ND
PC56106-ND
P220ECT-ND
LL2012-F2N7S
BDS31314-6-452
35VDC
1-877-GOLDMOS
1301-PTF
Transistor 4733
capacitor siemens 4700 35
BDS31314-6-452
CGS C14
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PTF210301E
Abstract: No abstract text available
Text: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation
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PTF210301E
PTF210301F
PTF210301E
PTF210301F
30-watt,
PTF210301F*
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Untitled
Abstract: No abstract text available
Text: PTF 102079 LDMOS RF Power Field Effect Transistor 30 Watt, DCS/PCS Band, 1930–1990 MHz Description Key Features The PTF 102079 is a 30–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P–1dB . Full gold metallization ensures excellent device lifetime and reliability.
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1522-PTF
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PTF210301E
Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210301
PTF210301
PTF210301E
marking us capacitor pf l1
PTF210301A
DD 127 D TRANSISTOR
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PTF082001E
Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
Text: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest
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PTF082001E
PTF082001F
PTF082001E
PTF082001F
200-watt,
PTF082001F*
IS-95
17erous
atc 1725
LM7805 smd
smd transistor infineon
106T
BCP56
106T capacitor
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10134
Abstract: capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180
Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface
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35VDC
1-877-GOLDMOS
1522-PTF
10134
capacitor siemens 4700 35
BDS31314-6-452
transistor t 2180
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PTF+102015
Abstract: PTF102015 102015
Text: PTF 102015 LDMOS RF Power Field Effect Transistor 30 Watts, 2110–2170 MHz Description Key Features The PTF 102015 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 16 dB gain. Full gold metallization ensures
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1522-PTF
PTF+102015
PTF102015
102015
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resistor 220 ohm
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM capacitor siemens 4700 35 200B G200 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Text: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization
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P220ECT-ND
1-877-GOLDMOS
1522-PTF
resistor 220 ohm
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
capacitor siemens 4700 35
200B
G200
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
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PTF210301A
Abstract: PTF210301E
Text: PTF210301A High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz PTF210301A Package 20265 Description The PTF210301A is a 30-watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210301A
PTF210301A
30-watt,
PTF210301E
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resistor 220 ohm
Abstract: capacitor siemens 4700 35 P Ferrite Siemens 200B G200 transistor amplifier 3 ghz 10 watts 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM transistor c 380 30-WATT
Text: PTF 10065 GOLDMOS Field Effect Transistor 30 Watts, 1.93–1.99 GHz Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization
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P220ECT-ND
1-877-GOLDMOS
1522-PTF
resistor 220 ohm
capacitor siemens 4700 35
P Ferrite Siemens
200B
G200
transistor amplifier 3 ghz 10 watts
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
transistor c 380
30-WATT
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ericsson 10007
Abstract: ca 3161 e IC
Text: PTF 10007 GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization
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PC56106
1-877-GOLDMOS
1522-PTF
ericsson 10007
ca 3161 e IC
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DD 102 CAPACITOR
Abstract: PA13 transistor 200 watt 28 v 0-30 mhz PCC103BCT-ND PCC103B
Text: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5
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PC56106-ND
PCC103BCT-ND
P5182-ND
220ECT-ND
1-877-GOLDMOS
1522-PTF
DD 102 CAPACITOR
PA13
transistor 200 watt 28 v 0-30 mhz
PCC103BCT-ND
PCC103B
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 30 Watts, 1800-2000 MHz PTF 102079* Description Key Features The PTF 102079 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 1800 to 2000 MHz. This LDMOS device operates at 47% efficiency with 15 dB gain. Nitride
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1-877-GOLDMOS
1522-PTF
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Untitled
Abstract: No abstract text available
Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
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PTF210301
PTF210301
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BDS31314-6-452
Abstract: Transistor 4733
Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface
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35VDC
1-877-GOLDMOS
1522-PTF
BDS31314-6-452
Transistor 4733
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PTF 102015
Abstract: PCC103BCT-ND 0.1 uF 50v CAPACITOR DD 102 CAPACITOR
Text: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 Efficiency -20 12 -35 ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5
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PC56106-ND
PCC103BCT-ND
P5182-ND
220ECT-ND
1-877-GOLDMOS
1522-PTF
PTF 102015
PCC103BCT-ND
0.1 uF 50v CAPACITOR
DD 102 CAPACITOR
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