z44n
Abstract: mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N
Text: AP436 Synchronous Rectifier MOSFET Driver Features General Descriptions - VOUT slew-rate minimum 100V/uS @ CL=3000pF - IOUT sink & source =1.2 / 0.9 A - Safety considered. - Reduce power system thermal & increase system efficiency. - Pb-free packages: SOT89-5L, SOP-8L
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AP436
00V/uS
3000pF
OT89-5L,
AP436
z44n
mosfet z44n
specification of mosfet irf
IRF MOSFET driver
IRF Power MOSFET code marking
IRF n CHANNEL MOSFET
1N4148 marking
SOT89 MARKING CODE CL
sot89 Marking mosfet
RL Z44N
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HV9961
Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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product25
HV9961
2N7002 MARKING 1702
HV9963
HV9910
hv9910b
SR087
str 6655
STR 6656
DN2450
HV509
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STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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CXDM1002N
Abstract: PB CXDM1002N sot-89 PF MOSFET SMD MARKING CODE 100V N-Channel MOSFET
Text: Product Brief CXDM1002N 2.0A, 100V N-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM1002N is a 2.0 Amp, 100 Volt N-Channel enhancement-mode MOSFET, designed for motor control, DC-DC conversion and relay driver applications. This
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CXDM1002N
OT-89
CXDM1002N
OT-89
21x9x9
27x9x17
23x23x13
23x23x23
53x23x23
PB CXDM1002N
sot-89 PF
MOSFET SMD MARKING CODE
100V N-Channel MOSFET
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CXDM4060P
Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
Text: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET
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CXDM4060P
OT-89
CXDM4060P
OT-89
21x9x9
27x9x17
23x23x13
23x23x23
53x23x23
PB CXDM4060P
MOSFET SMD MARKING CODE
MOSFET marking smd
SOT89 smd marking 13
sot-89 Marking LB
pb sot89 mosfet
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CXDM4060N
Abstract: CXDM3069N, CXDM4060N, and marking NC SOT-89 CXDM6053N smd sot-89 marking code SOT89 MARKING CODE SMD CODE PACKAGE SOT89 sot-89 marking nc
Text: Product Brief CXDM3069N 30V, 6.9A N-Channel CXDM4060N (40V, 6.0A N-Channel) CXDM6053N (60V, 5.3A N-Channel) SOT-89 MOSFETs in the SOT-89 package Typical Electrical Characteristics Central Semiconductor’s CXDM3069N, CXDM4060N, and CXDM6053N devices are high current N-channel enhancementmode silicon MOSFETs designed for high speed pulsed amplifier
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CXDM3069N
CXDM4060N
CXDM6053N
OT-89
CXDM3069N,
CXDM4060N,
CXDM6053N
OT-89
EIA-481-1-A
CXDM3069N
CXDM4060N
CXDM3069N, CXDM4060N, and
marking NC SOT-89
smd sot-89 marking code
SOT89 MARKING CODE
SMD CODE PACKAGE SOT89
sot-89 marking nc
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XP161A11A1PR
Abstract: XP161A11A1PR-G marking 4a sot-89
Text: XP161A11A1PR-G ETR1122_003 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP161A11A1PR-G
ETR1122
XP161A11A1PR-G
OT-89
OT-89
XP161A11A1PR
marking 4a sot-89
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Untitled
Abstract: No abstract text available
Text: XP162A12A6PR-G ETR1126_003 Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP162A12A6PR-G
ETR1126
XP162A12A6PR-G
OT-89
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N-channel Power MOSFET with low on-state resistance
Abstract: XP161A1355PR
Text: XP161A1355PR-G ETR1124_002 Power MOSFET •GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP161A1355PR-G
ETR1124
XP161A1355PR-G
OT-89
OT-89products
N-channel Power MOSFET with low on-state resistance
XP161A1355PR
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XP162A11C0PR
Abstract: p-channel mosfet sot89 5V
Text: XP162A11C0PR-G ETR1125_003 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP162A11C0PR-G
ETR1125
XP162A11C0PR-G
OT-89
OT-89.
XP162A11C0PR
p-channel mosfet sot89 5V
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N-channel Power MOSFET with low on-state resistance
Abstract: XP161A1265PR
Text: XP161A1265PR-G ETR1123_002 Power MOSFET •GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP161A1265PR-G
ETR1123
XP161A1265PR-G
OT-89
OT-89
N-channel Power MOSFET with low on-state resistance
XP161A1265PR
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XP162A12A6PR
Abstract: No abstract text available
Text: XP162A12A6PR-G ETR1126_003 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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ETR1126
XP162A12A6PR-G
OT-89
OT-89.
XP162A12A6PR
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XP161A1265PR
Abstract: XP161A1265PR-G
Text: XP161A1265PR-G ETR1123_003 Power MOSFET •GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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ETR1123
XP161A1265PR-G
OT-89
XP161A1265PR
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Untitled
Abstract: No abstract text available
Text: XP161A1355PR-G ETR1124_003 Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP161A1355PR-G
ETR1124
XP161A1355PR-G
OT-89
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Untitled
Abstract: No abstract text available
Text: XP162A11C0PR-G ETR1125_003 Power MOSFET GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP162A11C0PR-G
ETR1125
XP162A11C0PR-G
OT-89
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XP161A1355PR
Abstract: marking 4a sot-89
Text: XP161A1355PR-G ETR1124_003 Power MOSFET •GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP161A1355PR-G
ETR1124
XP161A1355PR-G
OT-89
XP161A1355PR
marking 4a sot-89
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P-channel Power MOSFET with low on-state resistance
Abstract: XP162A11C0PR
Text: XP162A11C0PR-G ETR1125_002 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP162A11C0PR-G
ETR1125
XP162A11C0PR-G
OT-89
P-channel Power MOSFET with low on-state resistance
XP162A11C0PR
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N-channel Power MOSFET with low on-state resistance
Abstract: XP161A11A1PR
Text: XP161A11A1PR-G ETR1122_002 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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ETR1122
XP161A11A1PR-G
OT-89
N-channel Power MOSFET with low on-state resistance
XP161A11A1PR
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P-channel Power MOSFET with low on-state resistance
Abstract: XP162A12A6PR
Text: XP162A12A6PR-G ETR1126_002 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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ETR1126
XP162A12A6PR-G
OT-89
P-channel Power MOSFET with low on-state resistance
XP162A12A6PR
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Untitled
Abstract: No abstract text available
Text: 外形寸法図・参考パターン寸法 ●SOT-89 Unit: mm •外形寸法図 4.5±0.1 1.6 +0.15 -0.2 0.4 +0.03 0.4 -0.02 4.0±0.25 1.0±0.2 2.5±0.1 φ1.0 0.47±0.06 0.42±0.06 +0.03 0.4 -0.02 (1.7) 1.5±0.1 (0.25) (1.85) (0.4) 1.5±0.1 (0.1)
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OT-89
OT-89
UL94V-0
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45A SOT-89
Abstract: WTM2310A pb sot89 mosfet
Text: WTM2310A N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 5.0 AMPERES P b Lead Pb -Free DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE Features: 2 SOURCE * Simple Drive Requirement. * Super High Density Cell Design for Extremely Low RDS(ON). 1 2 3 1. GATE
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WTM2310A
OT-89
04-Feb-10
OT-89
500TYP
45A SOT-89
WTM2310A
pb sot89 mosfet
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SOT-89
Abstract: PB SOT-89
Text: ●SOT-89 Power Dissipation Power dissipation data for the SOT-89 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition. 1. Measurement Condition Reference data
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OT-89
40mm1600mm2
250mm2
SOT-89
PB SOT-89
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Untitled
Abstract: No abstract text available
Text: <Preliminary> FS8844 250 mA Low Quiescent Current LDO Linear Regulator General Description Features The FS8844 series is a positive voltage regulator with high accuracy output voltage and ultra-low quiescent current which is typically 2.0µA. The device is ideal for handheld communication
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FS8844
FS8844
250mA
OT-23
OT-23-5
OT-89
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