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    PB SOT89 MOSFET Search Results

    PB SOT89 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    PB SOT89 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    z44n

    Abstract: mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N
    Text: AP436 Synchronous Rectifier MOSFET Driver „ Features „ General Descriptions - VOUT slew-rate minimum 100V/uS @ CL=3000pF - IOUT sink & source =1.2 / 0.9 A - Safety considered. - Reduce power system thermal & increase system efficiency. - Pb-free packages: SOT89-5L, SOP-8L


    Original     		PDF AP436 00V/uS 3000pF OT89-5L, AP436 z44n mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N

    HV9961

    Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
    Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF product25 HV9961 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509

    STR 6656

    Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF

    ic str wg 252

    Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF

    CXDM1002N

    Abstract: PB CXDM1002N sot-89 PF MOSFET SMD MARKING CODE 100V N-Channel MOSFET
    Text: Product Brief CXDM1002N 2.0A, 100V N-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM1002N is a 2.0 Amp, 100 Volt N-Channel enhancement-mode MOSFET, designed for motor control, DC-DC conversion and relay driver applications. This


    Original     		PDF CXDM1002N OT-89 CXDM1002N OT-89 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 PB CXDM1002N sot-89 PF MOSFET SMD MARKING CODE 100V N-Channel MOSFET

    CXDM4060P

    Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
    Text: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET


    Original     		PDF CXDM4060P OT-89 CXDM4060P OT-89 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet

    CXDM4060N

    Abstract: CXDM3069N, CXDM4060N, and marking NC SOT-89 CXDM6053N smd sot-89 marking code SOT89 MARKING CODE SMD CODE PACKAGE SOT89 sot-89 marking nc
    Text: Product Brief CXDM3069N 30V, 6.9A N-Channel CXDM4060N (40V, 6.0A N-Channel) CXDM6053N (60V, 5.3A N-Channel) SOT-89 MOSFETs in the SOT-89 package Typical Electrical Characteristics Central Semiconductor’s CXDM3069N, CXDM4060N, and CXDM6053N devices are high current N-channel enhancementmode silicon MOSFETs designed for high speed pulsed amplifier


    Original     		PDF CXDM3069N CXDM4060N CXDM6053N OT-89 CXDM3069N, CXDM4060N, CXDM6053N OT-89 EIA-481-1-A CXDM3069N CXDM4060N CXDM3069N, CXDM4060N, and marking NC SOT-89 smd sot-89 marking code SOT89 MARKING CODE SMD CODE PACKAGE SOT89 sot-89 marking nc

    XP161A11A1PR

    Abstract: XP161A11A1PR-G marking 4a sot-89
    Text: XP161A11A1PR-G ETR1122_003 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP161A11A1PR-G ETR1122 XP161A11A1PR-G OT-89 OT-89 XP161A11A1PR marking 4a sot-89

    Untitled

    Abstract: No abstract text available
    Text: XP162A12A6PR-G ETR1126_003 Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP162A12A6PR-G ETR1126 XP162A12A6PR-G OT-89

    N-channel Power MOSFET with low on-state resistance

    Abstract: XP161A1355PR
    Text: XP161A1355PR-G ETR1124_002 Power MOSFET •GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP161A1355PR-G ETR1124 XP161A1355PR-G OT-89 OT-89products N-channel Power MOSFET with low on-state resistance XP161A1355PR

    XP162A11C0PR

    Abstract: p-channel mosfet sot89 5V
    Text: XP162A11C0PR-G ETR1125_003 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP162A11C0PR-G ETR1125 XP162A11C0PR-G OT-89 OT-89. XP162A11C0PR p-channel mosfet sot89 5V

    N-channel Power MOSFET with low on-state resistance

    Abstract: XP161A1265PR
    Text: XP161A1265PR-G ETR1123_002 Power MOSFET •GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP161A1265PR-G ETR1123 XP161A1265PR-G OT-89 OT-89 N-channel Power MOSFET with low on-state resistance XP161A1265PR

    XP162A12A6PR

    Abstract: No abstract text available
    Text: XP162A12A6PR-G ETR1126_003 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP162A12A6PR-G ETR1126 XP162A12A6PR-G OT-89 OT-89. XP162A12A6PR

    XP161A1265PR

    Abstract: XP161A1265PR-G
    Text: XP161A1265PR-G ETR1123_003 Power MOSFET •GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP161A1265PR-G ETR1123 XP161A1265PR-G OT-89 XP161A1265PR

    Untitled

    Abstract: No abstract text available
    Text: XP161A1355PR-G ETR1124_003 Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP161A1355PR-G ETR1124 XP161A1355PR-G OT-89

    Untitled

    Abstract: No abstract text available
    Text: XP162A11C0PR-G ETR1125_003 Power MOSFET GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP162A11C0PR-G ETR1125 XP162A11C0PR-G OT-89

    XP161A1355PR

    Abstract: marking 4a sot-89
    Text: XP161A1355PR-G ETR1124_003 Power MOSFET •GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP161A1355PR-G ETR1124 XP161A1355PR-G OT-89 XP161A1355PR marking 4a sot-89

    P-channel Power MOSFET with low on-state resistance

    Abstract: XP162A11C0PR
    Text: XP162A11C0PR-G ETR1125_002 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP162A11C0PR-G ETR1125 XP162A11C0PR-G OT-89 P-channel Power MOSFET with low on-state resistance XP162A11C0PR

    N-channel Power MOSFET with low on-state resistance

    Abstract: XP161A11A1PR
    Text: XP161A11A1PR-G ETR1122_002 Power MOSFET •GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP161A11A1PR-G ETR1122 XP161A11A1PR-G OT-89 N-channel Power MOSFET with low on-state resistance XP161A11A1PR

    P-channel Power MOSFET with low on-state resistance

    Abstract: XP162A12A6PR
    Text: XP162A12A6PR-G ETR1126_002 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP162A12A6PR-G ETR1126 XP162A12A6PR-G OT-89 P-channel Power MOSFET with low on-state resistance XP162A12A6PR

    Untitled

    Abstract: No abstract text available
    Text: 外形寸法図・参考パターン寸法 ●SOT-89 Unit: mm •外形寸法図 4.5±0.1 1.6 +0.15 -0.2 0.4 +0.03 0.4 -0.02 4.0±0.25 1.0±0.2 2.5±0.1 φ1.0 0.47±0.06 0.42±0.06 +0.03 0.4 -0.02 （1.7) 1.5±0.1 （0.25) （1.85) （0.4) 1.5±0.1 (0.1)


    Original     		PDF OT-89 OT-89 UL94V-0

    45A SOT-89

    Abstract: WTM2310A pb sot89 mosfet
    Text: WTM2310A N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 5.0 AMPERES P b Lead Pb -Free DRAIN SOUCE VOLTAGE 60 VOLTAGE 1 GATE Features: 2 SOURCE * Simple Drive Requirement. * Super High Density Cell Design for Extremely Low RDS(ON). 1 2 3 1. GATE


    Original     		PDF WTM2310A OT-89 04-Feb-10 OT-89 500TYP 45A SOT-89 WTM2310A pb sot89 mosfet

    SOT-89

    Abstract: PB SOT-89
    Text: ●SOT-89 Power Dissipation Power dissipation data for the SOT-89 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition. 1. Measurement Condition Reference data


    Original     		PDF OT-89 40mm1600mm2 250mm2 SOT-89 PB SOT-89

    Untitled

    Abstract: No abstract text available
    Text: <Preliminary> FS8844 250 mA Low Quiescent Current LDO Linear Regulator General Description Features The FS8844 series is a positive voltage regulator with high accuracy output voltage and ultra-low quiescent current which is typically 2.0µA. The device is ideal for handheld communication


    Original     		PDF FS8844 FS8844 250mA OT-23 OT-23-5 OT-89