RK26
Abstract: No abstract text available
Text: 1218 Reader's Spreads 6/20/02 8:31 PM Page 185 RN26, RNF26, RK26 radial metal film leaded resistors features • Lead frame construction • High density assembly and excellent self-standing strength • Marking: Blue body color with color dot marking for resistance and tolerance values
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RNF26,
RNF26
RN262E
RN262C
RK26
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Untitled
Abstract: No abstract text available
Text: RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2710,RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z z Including two devices in USV (ultra super mini type with 5 leads)
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RN2710
RN2711
RN1710
RN1711
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Untitled
Abstract: No abstract text available
Text: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including twodevices in SMV (super mini type with 5 leads)
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RN2510
RN2511
RN1510
RN1511
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Untitled
Abstract: No abstract text available
Text: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2410, RN2411 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design
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Original
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RN2410
RN2411
RN2410,
RN1410,
RN1411
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Untitled
Abstract: No abstract text available
Text: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2510, RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SMV (super mini type with 5 leads)
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Original
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RN2510
RN2511
RN2510,
RN1510
RN1511
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Untitled
Abstract: No abstract text available
Text: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2410, RN2411 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplified circuit design
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Original
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RN2410
RN2411
RN2410,
RN1410,
RN1411
O-236MOD
SC-59
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2710,RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in USV (ultra super mini type with 5 leads)
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Original
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RN2710
RN2711
RN1710
RN1711
20led
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Untitled
Abstract: No abstract text available
Text: RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910, RN2911 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads)
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Original
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RN2910
RN2911
RN2910,
RN1910
RN1911
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Untitled
Abstract: No abstract text available
Text: RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2710, RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z z Including two devices in USV (ultra super mini type with 5 leads)
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Original
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RN2710
RN2711
RN2710,
RN1710
RN1711
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2410, RN2411 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplified circuit design
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Original
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RN2410
RN2411
RN2410,
RN1410,
RN1411
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PDF
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RN1610
Abstract: RN1611 RN2610 RN2611
Text: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2610,RN2611 Unit in mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SM6 (super mini type with 6 leads)
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Original
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RN2610
RN2611
RN1610
RN1611
RN1611
RN2611
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RN1510
Abstract: RN1511 RN2510 RN2511
Text: RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2510,RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SMV (super mini type with 5 leads)
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RN2510
RN2511
RN1510
RN1511
RN1511
RN2511
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Untitled
Abstract: No abstract text available
Text: RN2610,RN2611 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2610, RN2611 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including twodevices in SM6 (super mini type with 6 leads)
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RN2610
RN2611
RN2610,
RN1610
RN1611
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RN1910
Abstract: RN1911 RN2910 RN2911
Text: RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910,RN2911 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads)
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RN2910
RN2911
RN1910
RN1911
RN1911
RN2911
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Untitled
Abstract: No abstract text available
Text: RN2967FE~RN2969FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2967FE,RN2968FE,RN2969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6-pin)
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RN2967FE
RN2969FE
RN2968FE
RN1967FE
RN1969FE
RN2968FE
RN2969FE
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Untitled
Abstract: No abstract text available
Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV
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RN1112MFV
RN1113MFV
RN1112MFV,
RN2112MFV
RN2113MFVmitation,
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Untitled
Abstract: No abstract text available
Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits.
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RN2112MFV
RN2113MFV
RN2112MFV,
RN1112MFV
RN1113MFV
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Untitled
Abstract: No abstract text available
Text: RN2967FE~RN2969FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2967FE,RN2968FE,RN2969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6-pin)
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RN2967FE
RN2969FE
RN2968FE
RN1967FE
RN1969FE
RN2968FE
RN2967FE
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PDF
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RN1112MFV
Abstract: RN1113MFV RN2112MFV RN2113MFV
Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications A wide range of resistor values is available for use in various circuits.
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RN2112MFV
RN2113MFV
RN1112MFV
RN1113MFV
RN1113MFV
RN2113MFV
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Untitled
Abstract: No abstract text available
Text: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1110MFV, RN1111MFV Unit: mm A wide range of resistor values is available for use in various circuits. Complementary to the RN2110MFV, RN2111MFV
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RN1110MFV
RN1111MFV
RN1110MFV,
RN2110mitation,
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Untitled
Abstract: No abstract text available
Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 1.2±0.05
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RN2112MFV
RN2113MFV
RN1112MFV
RN1113MFV
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RN1130MFV
Abstract: RN2130MFV sat 1205
Text: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Reduce a quantity of parts and manufacturing process
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RN2130MFV
RN1130MFV
RN1130MFV
RN2130MFV
sat 1205
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RN1112MFV
Abstract: RN1113MFV RN2112MFV RN2113MFV
Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV to RN2113MFV
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RN1112MFV
RN1113MFV
RN2112lled
RN1113MFV
RN2112MFV
RN2113MFV
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Untitled
Abstract: No abstract text available
Text: RN2707~RN2709 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2707, RN2708, RN2709 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in USV (ultra super mini type with 5 leads)
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Original
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RN2707
RN2709
RN2707,
RN2708,
RN1707
RN1709
RN2707
RN2708
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PDF
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