SSSMini 3
Abstract: No abstract text available
Text: New Low loss and low distortion for RF bandswitching PIN Diode Series Overview Panasonic PIN Diodes are designed for AGC in antenna switches and bandswitching in tuner applications. The high efficiency low loss/low distortion as well as its smaller and thinner package is the most vital feature for
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OD-723)
SSSMini 3
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MA27V16
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27V16 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 5° Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.01 Reverse voltage DC Symbol 0.52±0.03
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MA27V16
MA27V16
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MA27P01
Abstract: No abstract text available
Text: PIN diodes MA27P01 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For high frequency switch 0.13+0.05 –0.02 Symbol Rating Unit VR 60 V Forward current DC IF 100 mA Power dissipation * PD 150 mW Junction temperature Tj 150 °C Storage temperature
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MA27P01
MA27P01
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MA27V12
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27V12 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 8 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05
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MA27V12
MA27V12
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MA27V04
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27V04 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05
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MA27V04
MA27V04
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MA27331
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27331 Silicon epitaxial planar type Unit: mm For VCO of a UHF radio 0.27+0.05 –0.02 0.10+0.05 –0.02 Unit VR 12 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.01 Reverse voltage DC Rating
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MA27331
MA27331
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MA27V03
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27V03 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05
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MA27V03
MA27V03
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MA27V09
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27V09 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05
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MA27V09
MA27V09
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MA27V02
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27V02 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05
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MA27V02
MA27V02
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MA27V15
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27V15 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For VCO 0.10+0.05 –0.02 0.60±0.05 • Absolute Maximum Ratings Ta = 25°C Rating Unit VR 60 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150
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MA27V15
MA27V15
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IR 984
Abstract: MA27V13
Text: Variable Capacitance Diodes MA27V13 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 12 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max.
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MA27V13
IR 984
MA27V13
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MA27V05
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27V05 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max.
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MA27V05
MA27V05
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Untitled
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27376 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Junction temperature Storage temperatur Symbol Rating Unit VR 6 V Tj 125 °C Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05
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MA27376
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MA27V07
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27V07 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05
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MA27V07
MA27V07
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MA27V11
Abstract: MA1401
Text: Variable Capacitance Diodes MA27V11 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 8 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.01 Parameter Reverse voltage DC
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MA27V11
MA27V11
MA1401
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MA27376
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27376 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Junction temperature Storage temperatur Symbol Rating Unit VR 6 V Tj 125 °C Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05
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MA27376
MA27376
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MA27V01
Abstract: No abstract text available
Text: Variable Capacitance Diodes MA27V01 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Symbol Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.52±0.03 5° 0.15 max. 0.60±0.05
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MA27V01
MA27V01
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MA27
Abstract: MA2B0270A MA2B027 MA2B0270B MA2B027WA PANASONIC MA27 MA27 Series
Text: Varistors MA2B027 Series MA27 Series Silicon epitaxial planar type variable resistor For temperature and reduced voltage compensation Unit : mm φ 0.56 max. • Features • High reliability achieved through combination of a planar type chip and glass sealing structure
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MA2B027
DO-35
MA2B0270A/B
MA2B027WA/WB
MA2B027TA/TB
MA2B027QA/QB
MA27
MA2B0270A
MA2B0270B
MA2B027WA
PANASONIC MA27
MA27 Series
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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MA3DF30
Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
Text: 2009 ver. 2 Diode Series %JPEF4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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PANASONIC MA27
Abstract: delay line 330ns MA27 MN8033 MN8033S MN8038 MN8038S 561R agdbb st 1009
Text: PANASONIC 6932852 PANASONIC INDL/ELEK -CIO »7 ^ 3 2 0 5 2 72 I N D L t E L E C T R O N IC " ~ “ .7 2 Ç — 000^13 0,6613 — D ~^M N 8038, w .j- M N 8038S M N 8038, M N8038S CCD • CCD Delay Line for Video Signal ■ ^ ^ S E S O / P i n Assignment
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MN8038,
MN8038S
MN8038Sfi,
MN8038S
PANASONIC MA27
delay line 330ns
MA27
MN8033
MN8033S
MN8038
561R
agdbb
st 1009
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AN7273
Abstract: AN7223
Text: Panasonic ic AN 7273 A M fa -+ , FM -A M 4 > r a » * K « @ !8 /A M Tuner, FM-AM IF Amplifier Circuit • m * AN7273 l±, AN7223 ir H i-F i X t w * + a . - i - f t icISttSEM L AN7223 iO& itg* t o t |H B#U X Y ■ 4$ t « • FM-AM iflJfl) • ( x h -,- f\i - t a i # )
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AN7273
AN7223
AN7273
2-455B
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Untitled
Abstract: No abstract text available
Text: PANASONIC PANASONI C -CIO 72 I NDL t E L E C T R O N I C ~~.~ 1 7 ^ 3 2 0 5 2 7 2Ç 0 6 6 1 3 — p M N 8038, M N8038S • M M N 8038, & Í É Í f D !iV., T R T ^ CCD Delay Line for Video Signal ■ ^^SESO/Pin Assignment £ l tz M N 8 0 3 8 S I± ,
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N8038S
MN8038,
32fl52
N8038,
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