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    PLSI 1016-60LJ

    Abstract: PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT
    Text: Lattice Semiconductor Data Book 1996 Click on one of the following choices: • Table of Contents • Data Book Updates & New Products • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. ispLSI and pLSI Product Index Pins Density


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    PDF 1016E 1032E 20ters 48-Pin 304-Pin PLSI 1016-60LJ PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT

    state-machine structure

    Abstract: PDF IC 9012 SR flip flop using discrete gates 123B 20G10 CY7C277 PALCE22V10 PLDC20G10 S12A S12B
    Text: fax id: 6423 State Machine Design Considerations and Methodologies The use of state machines provides a systematic way to design complex sequential logic circuits—an increasingly popular approach since the advent of PLD Programmable Logic Device circuitry. This application note describes the many


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    20G10

    Abstract: S12B 123B CY7C277 PALCE22V10 PLDC20G10 S12A bit-slice PALC20G10
    Text: State Machine Design Considerations and Methodologies The use of state machines provides a systematic way to design complex sequential logic circuits—an increasingly popular approach since the advent of PLD Programmable Logic Device circuitry. This application note describes the many


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    HD637B01VOP

    Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
    Text: AF−9700 SERIES DEVICE LIST AF−9704 EPROM AF−9705 MOS AF−9706 EPROM AF−9707 PC AF−9721 GANG PROGRAMMER


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    PDF AF-9700 24DIP 28DIP HD637B01VOP HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257

    gal16v8

    Abstract: National SEMICONDUCTOR GAL16V8 gal20v8 PAL20P8 GAL22V10 85C220 PAL16L8 EP330 lattice GAL20V8 AMD PAL20P8
    Text: GAL Product Line Cross Reference MANUFACTURER ALTERA AMD PART # EP310 EP320 EP330 GAL16V8Z1 GAL16V81 or. GAL18V10 5C031 5C032 85C220 GAL16V81 or. GAL16V8Z or. GAL18V10 85C224 GAL20V81 or. GAL22V10 85C22V10 GAL22V10 PAL10H8 PAL10L8 PAL12H6 PAL12L6


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    PDF EP310 EP320 EP330 GAL16V8Z1 GAL16V81 GAL18V10 5C031 5C032 85C220 gal16v8 National SEMICONDUCTOR GAL16V8 gal20v8 PAL20P8 GAL22V10 85C220 PAL16L8 EP330 lattice GAL20V8 AMD PAL20P8

    data sheet transistor 9012

    Abstract: PALC20G10 dd 127 dd 127 d PDF IC 9012 20G10 9012 011 ic 9012 transistor 9012 transistors equivalent 9012 123B
    Text: State Machine Design Considerations and Methodologies The use of state machines provides a systematic way to another. to design complex sequential logic circuitsĊan inĆ or more product terms generated from external inĆ creasingly puts, although other state paths are possible.


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    ATMEL GAL16V8

    Abstract: PAL20P8 GAL16V8 plhs18p8 TI GAL22V10 PLHS16L8 GAL22V10 National AmPAL16R4 GAL16V8 atmel ampal18p8
    Text: GAL Product Line Cross Reference MANUFACTURER ALTERA AMD PART # EP310 EP320 EP330 GAL16V8Z1 GAL16V81 or. GAL18V10 5C031 5C032 85C220 GAL16V81 or. GAL16V8Z or. GAL18V10 85C224 GAL20V81 or. GAL22V10 85C22V10 GAL22V10 PAL10H8 PAL10L8 PAL12H6 PAL12L6


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    PDF EP310 EP320 EP330 GAL16V8Z1 GAL16V81 GAL18V10 5C031 5C032 85C220 ATMEL GAL16V8 PAL20P8 GAL16V8 plhs18p8 TI GAL22V10 PLHS16L8 GAL22V10 National AmPAL16R4 GAL16V8 atmel ampal18p8

    EP320

    Abstract: PLS153 gal16v8 EP330 peel18cv8 GAL22V10 National PAL20P8 altera ep320 85C220 EP310
    Text: GAL Product Line Cross Reference MANUFACTURER ALTERA AMD PART # EP310 EP320 EP330 GAL16V8Z1 GAL16V81 or. GAL18V10 5C031 5C032 85C220 GAL16V81 or. GAL16V8Z or. GAL18V10 85C224 GAL20V81 or. GAL22V10 85C22V10 GAL22V10 PAL10H8 PAL10L8 PAL12H6 PAL12L6


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    PDF EP310 EP320 EP330 GAL16V8Z1 GAL16V81 GAL18V10 5C031 5C032 85C220 EP320 PLS153 gal16v8 EP330 peel18cv8 GAL22V10 National PAL20P8 altera ep320 85C220 EP310

    National SEMICONDUCTOR GAL16V8

    Abstract: EP330 PLHS18P8 EP320 5c032 ATMEL GAL16V8 PALC22V10 ampal18p8 GAL16V8 LA4490
    Text: GAL Product Line Cross Reference MANUFACTURER ALTERA AMD PART # EP310 EP320 EP330 GAL16V8Z1 GAL16V81 or. GAL18V10 5C031 5C032 85C220 GAL16V81 or. GAL16V8Z or. GAL18V10 85C224 GAL20V81 or. GAL22V10 85C22V10 GAL22V10 PAL10H8 PAL10L8 PAL12H6 PAL12L6


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    PDF EP310 EP320 EP330 GAL16V8Z1 GAL16V81 GAL18V10 5C031 5C032 85C220 National SEMICONDUCTOR GAL16V8 EP330 PLHS18P8 EP320 5c032 ATMEL GAL16V8 PALC22V10 ampal18p8 GAL16V8 LA4490

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. Preliminary Data March 1989 TM Features Advanced CMOS EEPROM Technology High Performance, Low Power Consumption — tPD = 20ns, fmax= 37MHz — Icc = 55mA + 0.5mA/MHz EE Reprogrammability — Low risk reprogrammable inventory


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    PDF 37MHz 12-configuration

    Untitled

    Abstract: No abstract text available
    Text: n n iii n . CMOS Programmable Electrically Erasable Logic Device A l W l l l a Semiconductors Pmduct Preview »m PEEL 20CG10-15 — Synchronous preset, asynchronous clear — Independent programmable output enables Features • Advanced CM O S EEPROM Technology


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    PDF 20CG10-15 24-pin PALC20G10 105mA 05mA/MHz PEEL20CG10-15 PEEL20CG10-15

    Untitled

    Abstract: No abstract text available
    Text: GO UL D INC/ 6 0 U L D A M I •> GOULD A/HiLSemiconductors MOE D MOSS'Jib D O l E T ö B b ■ A M I CMOS Programmable Electrically Erasable Logic Device PEEL 20CG10 T-46-19 -07 Features ~\ Application Versatility — Replaces random SSI/MSI logic — Emulates 24-pin bipolar PAL devices


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    PDF PEELTM20CG10 T-46-19 65fnA 24-pin 24-pln PALC20G10

    Untitled

    Abstract: No abstract text available
    Text: S4E D 4040707 DDQ1D50 ÖTb « I C T I C T INC , INC._ PEEL 20CG1 OA-15/PEEL™ 20CG1OAL-15 CMOS Programmable Electrically Erasable Logic Device Features T 'M b - i'î 'Ç n • Architectural Rexfciirryr I — 92 product term X 44 input AND array


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    PDF DDQ1D50 20CG1 OA-15/PEELâ 20CG1OAL-15 12-configuration 115mA 25MHz 24-pin 10-bit

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL C M O S MÔ4D7Q7 00DQ3SÖ 1 37E D Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 20CG10-12/PEEL 20CG10=15 CMOS Programmable Electrically Erasable Logic Device Features • 1 Micron CMOS EEPROM Technology Architectural Flexibility — 92 product temi X 44 input AND array


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    PDF 00DQ3SÃ 20CG10-12/PEEL 20CG10 12-configuration 105mA 20CG10-12 20CQ10-15 24-pin PEEL20CQ10

    PEEL20CG10

    Abstract: 20CG10 PEEL 20Cg10 PALC20G10
    Text: PEEL 20CG10 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


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    PDF 20CG10 PEEL20CG10 20CG10 PEEL 20Cg10 PALC20G10

    Untitled

    Abstract: No abstract text available
    Text: •> g o u l d A M I * Semiconductors CMOS Programmable Electrically Erasable Logic Device PEEL 20CG10 Features • A pplication Versatility — Replaces random SSI/MSI logic — Emulates 24-pin bipolar PAL devices — Convert 24-pin PAL and EPLD designs with


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    PDF 20CG10 24-pin PALC20G10 PEEL20CG10 PEEL22CG10

    Untitled

    Abstract: No abstract text available
    Text: SME 3> 4040707 0001040 =157 M I C T I C T INC , INC. PEEL 20CG10-25 ' ‘4 fe- W - 01 CMOS Programmable Electrically Erasable Logic Device Features • Advanced CMOS EEPROM Technology ■ High Performance, Low Power Consumption — tPD = 25ns, fmax= 33.3MHz


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    PDF 20CG10-25 25MHz 12-conliguration 10-bit

    PEEL20CG10

    Abstract: PALC20G10
    Text: AMI PEEL 20CG10 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,


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    PDF 20CG10 PEEL20CG10 480Kn PALC20G10

    Untitled

    Abstract: No abstract text available
    Text: , INC._ PEEL 20CG10-25 CMOS Programmable Electrically Erasable Logic Device Features Advanced CMOS EEPROM Technology High Performance, Low Power Consumption — tp D = 25ns, fmax= 33.3MHz — Ice = 55mA + 0.5mA/MHz


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    PDF 20CG10-25 12-configuration 10-bit

    Untitled

    Abstract: No abstract text available
    Text: , INC._ PEEL 20CG1 OA-10/PEEL20CG1 OA-15 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 92 product term X 44 input AND array — Up to 22 inputs and 10 outputs — Independently programmable


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    PDF 20CG1 OA-10/PEELâ OA-15 12-configuration 105mA 20CG10A-10 20CG10A-15 10-bit

    Untitled

    Abstract: No abstract text available
    Text: INC. PEEL 20CG10-25 CMOS Programmable Electrically Erasable Logic Device Features • Advanced CMOS EEPROM Technology ■ Architectural Flexibility — 92 product term X 44 input AND array — Up to 22 inputs and 10 outputs — Independently programmable


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    PDF 20CG10-25 12-configuration 25MHz 24-pin 10-bit

    Untitled

    Abstract: No abstract text available
    Text: , INC. PEEL 20CG1 OA-15/PEEL™ 20CG1OAL-15 C M O S Program m able Electrically Erasable Logic Device F e a tu re s • Advanced CMOS EEPROM Technology ■ Architectural Flexibility — 92 product term X 44 input AND array — Up to 22 inputs and 10 outputs


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    PDF 20CG1 OA-15/PEELâ 20CG1OAL-15 12-configuration 115mA 25MHz 24-pin 10-bit

    Untitled

    Abstract: No abstract text available
    Text: •> GOULD AMI CMOS Programmable Electrically Erasable Logic Device Product Preview * Semiconductors PEEL 20CG10-15 — Synchronous preset, asynchronous clear — Independent programmable output enables Features • Advanced CM OS EEPROM Technology • Application Versatility


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    PDF 20CG10-15 24-pin PALC20G10 105mA PEEL20CG10-15 PEEL20CG10

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL C M O S 5SE D 4flMQ707 DOOQMl 2 Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. 7 PEElIM 20CG10-12/PEE! 20CG1 0-15 CMOS Programmable Electrically Erasable Logic Device Features • 1 Micron CMOS EEPROM Technology Architectural Flexibility


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    PDF 4flMQ707 20CG10-12/PEE! 20CG1 12-configuration 105mA 20CG10-12 20CG10-15