GAL16V8
Abstract: GAL16VP8 GAL18V10 GAL20RA10 GAL20V8 GAL20VP8 GAL20XV10 GAL22V10 GAL26CV12
Text: Introduction to GAL Device Architectures Base Products - Aimed at providing superior design alternatives to bipolar PLDs, these five architectures replace over 98% of all bipolar PAL devices. The GAL16V8 and GAL20V8 replace forty-two different PAL devices.
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GAL16V8
GAL20V8
GAL22V10,
GAL20RA10,
GAL20XV10
100ms)
GAL16V8
GAL16VP8
GAL18V10
GAL20RA10
GAL20VP8
GAL22V10
GAL26CV12
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PDF
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Pal programming 22v10
Abstract: GAL16V8 GAL16VP8 GAL18V10 GAL20RA10 GAL20V8 GAL20VP8 GAL20XV10 GAL22V10 GAL26CV12
Text: Introduction to GAL Device Architectures Base Products - Aimed at providing superior design alternatives to bipolar PLDs, these five architectures replace over 98% of all bipolar PAL devices. The GAL16V8 and GAL20V8 replace forty-two different PAL devices.
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Original
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GAL16V8
GAL20V8
GAL22V10,
GAL20RA10,
GAL20XV10
100ms)
Pal programming 22v10
GAL16V8
GAL16VP8
GAL18V10
GAL20RA10
GAL20VP8
GAL22V10
GAL26CV12
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PDF
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palce programming Guide
Abstract: PALCE Programmer palce programmer schematic amd programmers guide amd part marking Pal programming PAL22V10 PALCE26V12 PALCE26V12H-7 AMD PALCE
Text: FINAL COM’L: H-7/10/15/20 IND: H-10/15/20 PALCE26V12 Family 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 115 mA at high
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H-7/10/15/20
H-10/15/20
PALCE26V12
28-Pin
16072E-18
palce programming Guide
PALCE Programmer
palce programmer schematic
amd programmers guide
amd part marking
Pal programming
PAL22V10
PALCE26V12H-7
AMD PALCE
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PDF
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22V10D
Abstract: 22V10D-10 22V10D-15 PALC22V10D PALC22V10D-7JC PALCE22V10 V10D
Text: For new designs, please refer to the PALCE22V10. PALC22V10D Flash Erasable, Reprogrammable CMOS PAL D Features D D Advanced secondĆgeneration PAL arĆ D D 5 ns tCO Low power 5 ns tS Ċ 90 mA max. commercial 10 ns 7.5 ns tPD testing Functional Description
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PALCE22V10.
PALC22V10D
133MHz
ALC22V10D
22V10D
22V10D-10
22V10D-15
PALC22V10D
PALC22V10D-7JC
PALCE22V10
V10D
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PDF
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United Technologies Microelectronics
Abstract: No abstract text available
Text: Military Standard Products UT22VP10 Radiation-Hardened Universal PAL Product Brief UNITED TECHNOLOGIES MICROELECTRONICS CENTER October 1993 □ Low operating current Ipo: 60ma + 1.5ma/MHz FEATURES D High speed Universal PAL - tp p : 25ns maximum CMOS 30ns maximum (TTL)
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UT22VP10
30MHz
United Technologies Microelectronics
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PDF
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Pal 009b
Abstract: signal path designer
Text: COM’L z \ Advanced Micro Devices PALCE26V12H-15/20 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pln versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 105 mA at high
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PALCE26V12H-15/20
28-Pin
28-pln
28-pln.
Pal 009b
signal path designer
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PDF
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22V10D
Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
Text: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar chitecture Low power — 90 mA max. standard — 120 mA max. military
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PALC22V10D
100-MHz
83-MHz
PALC22V10D
15DMB
PALC22V10D-
PALC22V10Dâ
15KMB
PALC22V10D-15LMB
22V10D
PALC22V10D-10PC
PALC22V10B
PALC22V10B-15
PALC22V10D-10JC
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PDF
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Untitled
Abstract: No abstract text available
Text: _ PALC22V10D SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device • Advanced second-generation PAL ar chitecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for
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PALC22V10D
133-MHz
300-Mil)
24-Lead
28-Lead
24-Lead
28-Square
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PDF
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T Flip-Flop
Abstract: No abstract text available
Text: Comi * PAL22IP6-25 Interface Protocol Asynchronous Cell IPAC PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • PAL device optimized for asynchronous Interface protocol applications ■ High currant driving capability—48 mA/64 mA ■ Six unique edge-actlvaled flip-flops
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OCR Scan
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PAL22IP6-25
74FXXX)
PAL20R8B.
PAL20R8B
74FXXX
T Flip-Flop
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PDF
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palc22v10d programming guide
Abstract: No abstract text available
Text: Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for electrical erasabllity and reprogrammablllty
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133-MHz
110-MHz
15-ns
25-ns
PALC22V10D-15JC
PALC22V10D-15PC
PALC22V1OD-15JI
PALC22V10D-15PI
PALC22V1
OD-15DMB
palc22v10d programming guide
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PDF
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Untitled
Abstract: No abstract text available
Text: Revision: Tuesday, January 5,1993 C.- PALC22V10D CYPRESS -SEMICONDUCTOR • Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar chitecture Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)
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OCR Scan
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PALC22V10D
133-MHz
110-MHz
15-ns
PALC22V10Bâ
25-ns
PALC22V10-25
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PDF
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Untitled
Abstract: No abstract text available
Text: PALCE26V12H-20/25 28-Pin EE C M O S Versatile PAL Device DISTINCTIVE CHARACTERISTICS 28-pin versatile PAL® programmable logic device archi tecture Electrically erasable CMOS technology provides half power only 105 mA at high speed (20 ns propagation
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PALCE26V12H-20/25
28-Pin
0372A
1757-007A
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PDF
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pal22v10
Abstract: al22v10 AMPAL22V10 5962-86053013X
Text: Am PAL22V 10 24-Pin IMOX Programmable Array Logic PAL Distinctive Characteristics • Second-generation PAL device architecture • • • • Increased logic power — up to 22 inputs and 10 outputs Increased product terms — average 12 per output
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PAL22V
24-Pin
28-pin
PAL22V10
AmPAL22V10
pal22v10
al22v10
5962-86053013X
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PDF
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AM 22V10
Abstract: Resistor Fuse 4.91 AMD 22V10 ampal
Text: AmPAL*22V10 24-Pin IMOX Programmable Array Logic PAL • • Second-generation PAL architecture Increased logic power — up to 22 inputs and 10 outputs Increased product terms — average 12 per output Variable product term distribution improves ease of use
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22V10
24-Pin
28-pin
SP0-300
FAM52
AmPAL22V10
AM 22V10
Resistor Fuse 4.91
AMD 22V10
ampal
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PDF
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Untitled
Abstract: No abstract text available
Text: •> CMOS Programmable g o u ld Electrically Erasable Logic Device AM I «Semiconductors PEEL 20C610 Features • Application Versatility — Replaces random SSI/MSI logic — Emulates 24-pin bipolar PAL devices — Convert 24-pin PAL and EPLD designs with
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20C610
24-pin
PALC20G10
PEEL20CG10
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PDF
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L2496
Abstract: No abstract text available
Text: Military Standard Products UT22VP10 Universal RAD pal Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER April 1996 FEATURES □ VDD: 5.0 volts ±10% □ High speed Universal RAD pal - tpj : 20ns, 25ns maximum - □ Radiation-hardened process and design; total dose irradia
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OCR Scan
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UT22VP10
33MHz
L-2-4-96
L2496
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PDF
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PAL 006A
Abstract: IC PAL 006A
Text: c o m ’l a PALCE26V12H-20/25 Advanced Micro Devices 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pln versatile PAL programmable logic device architecture ■ Two clock Inputs for Independent functions ■ Electrically erasable CMOS technology
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28-pln
PALCE26V12H-20/25
28-Pin
PALCE26V12
PAL 006A
IC PAL 006A
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PDF
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Untitled
Abstract: No abstract text available
Text: PALCE26V12H-15/20 Advanced Micro Devices 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Electrically erasable CMOS technology provides half power only 105 mA at high speed (15 ns propagation delay)
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OCR Scan
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PALCE26V12H-15/20
28-Pin
2350-024A
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PDF
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74Fxxx
Abstract: PAL22IP6
Text: Com'l a PAL22IP6-25 Interface Protocol Asynchronous Cell IPAC PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • PAL device optimized for asynchronous Interface protocol applications ■ High currant driving capability— 48 mA/64 mA ■ Six unique edge-activated flip-flops
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OCR Scan
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PAL22IP6-25
74FXXX)
PAL20R8B.
74FXXX
PAL20R8B
PAL22IP6
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PDF
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MULTIPLEXER IC
Abstract: palce programming Guide AMD PALCE
Text: FINAL COM’L: H-7/10/15/20 IND: H-10/15/20 Advanced Micro Devices PALCE26V12 Family 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • 28-pin versatile PAL programmable logic device architecture ■ Two clock inputs for independent functions
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OCR Scan
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H-7/10/15/20
H-10/15/20
PALCE26V12
28-Pin
16072E-18
MULTIPLEXER IC
palce programming Guide
AMD PALCE
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PDF
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22V10D-10
Abstract: 22V10D MIL-STD-1835 V10D-9 R1238 ay 9j CERAMIC LEADLESS CHIP CARRIER K73 Package PALC22V10D R2170
Text: fax id: 6007 For new designs, please refer to the PALCE22V10. PALC22V10D CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)
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PALCE22V10.
PALC22V10D
133-MHz
22V10D-10
22V10D
MIL-STD-1835
V10D-9
R1238
ay 9j
CERAMIC LEADLESS CHIP CARRIER
K73 Package
PALC22V10D
R2170
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PDF
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Untitled
Abstract: No abstract text available
Text: •> g o u l d A M I * Semiconductors CMOS Programmable Electrically Erasable Logic Device PEEL 20CG10 Features • A pplication Versatility — Replaces random SSI/MSI logic — Emulates 24-pin bipolar PAL devices — Convert 24-pin PAL and EPLD designs with
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OCR Scan
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20CG10
24-pin
PALC20G10
PEEL20CG10
PEEL22CG10
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PDF
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VP16V8
Abstract: VP20V8 VP20V8E-25 VP16V8E VP20V8E-35 ST 6395 BI VP16V8E-25 VP20V8E 16H8 gal programming algorithm
Text: VP16V8E • VP20V8E € GENERIC ARRAY LOGIC FEATURES • VP16V8E replaces most 20-pin bipolar PAL devices • Power-on reset for all registers • High-speed programming algorithm • VP20V8E replaces most 24-pin bipolar PAL devices • JEDEC approved TTL compatible
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OCR Scan
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VP16V8E
VP20V8E
VP16V8E
20-pin
VP20V8E
24-pin
8100-046-a-23-036
VP16V8
VP20V8
VP20V8E-25
VP20V8E-35
ST 6395 BI
VP16V8E-25
16H8
gal programming algorithm
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PDF
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Untitled
Abstract: No abstract text available
Text: Final COM’L El Advanced Micro Devices PALCE26V12H-20/25 28-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ 28-pln versatile PAL programmable logic device architecture Electrically erasable CMOS technology provides half power only 105 mA at high
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OCR Scan
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PALCE26V12H-20/25
28-Pin
28-pln
PALCE26V12
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PDF
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