SC-75
Abstract: KN4L3M
Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package • Resistors built-in type 0.3 +0.1 –0 0.15 +0.1 –0.05 • Complementary to KA4xxx PACKAGE KN4xxx SC-75 (USM) 1.6 ± 0.1
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SC-75
SC-75
KN4L3M
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PACKAGE usm
Abstract: JEDEC SC-70
Text: 3-Pin Ultra Super Mini Package USM Package Outline Dimensions Outline Dimensions Unit: mm 2.0 ±0.2 0.15 +0.1 –0.05 0.3 +0.1 –0 1 2.1 ±0.1 1.25 ±0.1 3 2 0.65 0.65 0.9 ±0.1 0 ~0.1 0.7 1.3 ±0.1 Land Pattern Example Unit: mm 1.9 1.0 0.5 Toshiba package name
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land pattern for sot109-1
Abstract: TSSOP-8 footprint and soldering sot-23 SOD87 footprint
Text: Packages Package cross reference 88 Packing methods 90 Minimized outline drawings and reflow soldering footprint 96 Package overview 86 107 87 Package cross reference Package cross reference 88 types in bold represent new products types in bold represent new products
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DO-35
DO-41
DO-34
OD80C
OD123F
HXSON12)
OT983
land pattern for sot109-1
TSSOP-8 footprint and soldering sot-23
SOD87 footprint
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USM4
Abstract: HC49USM4 WIFI layout guide
Text: ` 4 Pad Metal Package Quartz Crystal, 4.8 mm x 12.5 mm Product Features: HC49USM4 Series Applications: SMD Package Compatible with Leadfree Processing Grounded package for low EMI Fibre Channel Server & Storage Sonet /SDH 802.11 / Wifi T1/E1, T3/E3 System Clock
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HC49USM4
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
USM4
WIFI layout guide
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HC49USM4 Series
Abstract: No abstract text available
Text: ` 4 Pad Metal Package Quartz Crystal, 4.8 mm x 12.5 mm Product Features: HC49USM4 Series Applications: SMD Package Compatible with Leadfree Processing Grounded package for low EMI Fibre Channel Server & Storage Sonet /SDH 802.11 / Wifi T1/E1, T3/E3 System Clock
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HC49USM4
MIL-STD-883,
J-STD-020C,
JESD22-B102-D
HC49USM4 Series
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KA4A4M
Abstract: SC-75 A30150
Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1
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SC-75
KA4A4M
SC-75
A30150
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KN4A4L
Abstract: SC-75 KN4L3M
Text: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KN4xxx 3 0.8 ± 0.1 1.6 ± 0.1
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SC-75
KN4A4L
SC-75
KN4L3M
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D1649
Abstract: KA4A4M SC-75 KA4L4M
Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1
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SC-75
D1649
KA4A4M
SC-75
KA4L4M
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Untitled
Abstract: No abstract text available
Text: 3-Pin Ultra Super Mini Package Embossed TE85L Tape for the USM Package Tape Dimensions Unit: mm 2.0 ±0.05 φ1.5 ±0.1 0.2 4.0 ±0.1 Y 1.75 Y X 2.3 8.0 3.5 ±0.05 φ1.05 X’ Y’ Y’ 1.25 Feed direction 2.2 X X’ Cross section X-X’ Reel Dimensions Cross section Y-Y’
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TE85L
TE85L
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KF5N50
Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41
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OT-23
FLP-14
KTC3003
1N4007
DO-41
MJE13003
MJE13005
O-126
KF5N50
kf12n60
IC 1N4007
diode 400V 4A
TO220IS
1N4007 diode bridge
MB6S
DF06 IC
kf13n50
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KDR378
Abstract: marking x3
Text: SEMICONDUCTOR KDR378 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking X3 No. 2001. 3. 9 Item Marking Description Device Mark X3 KDR378 hFE Grade - - Revision No : 0 1/1
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KDR378
KDR378
marking x3
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marking PA
Abstract: KRA301E "marking PA"
Text: SEMICONDUCTOR KRA301E MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking PA No. 2000. 12. 27 Item Marking Description Device Mark PA KRA301E hFE Grade - - Revision No : 0 1/1
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KRA301E
marking PA
KRA301E
"marking PA"
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PC357NT
Abstract: PC357N1T PC357N2T PC357N5T PC357N7T PC357N8T PC357N9T PC357NOT Pc357Nf
Text: PC357NT Opaque*, Mini-tlat Package, General Purpose photocou~r PC357NT • ~ 1. Opaque type, mini-flat package 2. .3 . 4. * Unit : mm Dimandcms Pc357Nf 2.wf025 PC357NT (l-channel) Subminiature type (The volume is smaller than that of our conventional DIP type by as far as 30%.)
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PC357NT
Pc357Nf
wf025
PC357NT"
FC357NT
PC357NT
PC357N1T
PC357N2T
PC357N5T
PC357N7T
PC357N8T
PC357N9T
PC357NOT
Pc357Nf
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RT3P66U
Abstract: No abstract text available
Text: PRELIMINARY RT3P66U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P66U is a composite transistor built with two 1.6 ±0.05 RT1P430 in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ FEATURE
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RT3P66U
RT3P66U
RT1P430
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BC858W
Abstract: No abstract text available
Text: SEMICONDUCTOR BC858W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking 3J No. 2000. 12. 27 Item Marking Description Device Mark 3 BC858W hFE Grade J A J , B(K), C(L) Revision No : 0 1/1
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BC858W
BC858W
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isahaya
Abstract: RT1N141 RT3T11U
Text: RT3T11U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm 1.6 ±0.05 RT3T11U is a composite transistor built with RT1N141 chip and RT1P141 chip in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ
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RT3T11U
RT3T11U
RT1N141
RT1P141
isahaya
RT1N141
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RT1N241
Abstract: RT3N22U
Text: RT3N22U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm 1.6 ±0.05 RT3N22U is a composite transistor built with two RT1N241 in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ 6 0.5 FEATURE
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RT3N22U
RT3N22U
RT1N241
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RT1P144
Abstract: RT3T55U
Text: RT3T55U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3T55U is a RT1N144 chip composite and transistor RT1P144 built Unit：mm 1.6 ±0.05 with chip in USM6F 1.2 ±0.05 1pin ﾏｰｸ package.
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RT3T55U
RT1N144
RT1P144
RT1P144
RT3T55U
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sot-36
Abstract: sot36 SMD USM
Text: Pakages Available • 2 leads type Package Unit : mm USM DSM r “i r“i 1.25 Body dimension Actual size Enlarged (x3 .0) PSM r"1 1.25 1.7 2.6 1.7 • 4.5 1 ■ # # #M ini mold type (Unit : mm) Package r 2. 0 -n r 1 Body dimension 1606 (0603) 2125 (0805)
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OT-23)
SC-59/Japamn
OT-25)
OT-36)
LL-41
sot-36
sot36
SMD USM
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Untitled
Abstract: No abstract text available
Text: RA78K/0 ASSEMBLER PACKAGE 3. RA78K/0 ASSEMBLER PACKAGE The RA 76K /0 assem bler package consists of several softw are packages, such as a relocatable assem bler, structured assem bler preprocessor, and linker to aid in effective developm ent on the 7BK/0 Series.
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RA78K/0
LB78K0)
LB78K0
LCNV78K0)
NV78K0
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BENT LEAD transistor TO-92 Outline Dimensions
Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c
Text: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N
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SC-59)
SC-61)
TE85L
TE85R
TE85N
SC-70)
BENT LEAD transistor TO-92 Outline Dimensions
2SC2712 equivalent
4TE12
diode ssc
J Fet marking 2 AW
2SC2873 equivalent
90105 toshiba
ultrasonic atomizing
SMD TRANSISTOR MARKING 5c
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T0-92 DIMENSIONS
Abstract: No abstract text available
Text: CONTENTS [1 ] Alphanumeric Product List. [2 ] Quick Selector Guide . 13 Quick Selector by Type . Package Types .
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SC-70)
SC-59)
T0-92
SC-43)
T0-92 DIMENSIONS
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GR09
Abstract: KDS121
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.LTD. KDS121 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : USM. : V f =0.9V Typ. .
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KDS121
100mA
GR09
KDS121
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KDS122
Abstract: marking H
Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDS122 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : USM. : VF=0.9V Typ. .
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KDS122
100mA
100MHz
KDS122
marking H
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