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    PACKAGE MARKING T46 Search Results

    PACKAGE MARKING T46 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    PACKAGE MARKING T46 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DIODE JS4

    Abstract: ERA17 T460 JT MARKING MWRA t930 30S3 T151 T760 T810
    Text: ERA17 1.0A : Outline Drawings GENERAL USE RECTIFIER DIODE • i t s : Features • S'J'32*fcK>, 5mm£y*- @ f t » A * ^ 8 6 Ultra small package, possible for 5mm pitch automatic insertion. • S ffJIS 'tt High reliability \ tjk : Marking ESD-proof * 7-=i-K : â


    OCR Scan     		l95t/R89 DIODE JS4 ERA17 T460 JT MARKING MWRA t930 30S3 T151 T760 T810 PDF

    ACT46

    Abstract: ACT351 C167 instruction set C16x Instruction Set Manual siemens C166 instruction set C166 C167 C167CR-16FM SAB-C167CR-16FM injection
    Text: Microcontroller Components Errata Sheet October 9, 1998 / Release 1.2 Device: Stepping Code / Marking: Package: SAB-C167CR-16FM ES-AC, ES1-AC, ES1*-AC MQFP-144 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence


    Original     		SAB-C167CR-16FM MQFP-144 C167CR-16FM AP2924 16-bit emiconductor/products/ics/34/pdf/ap292401 C167CR-16FM, ACT46 ACT351 C167 instruction set C16x Instruction Set Manual siemens C166 instruction set C166 C167 SAB-C167CR-16FM injection PDF

    TR MARKING CODE K4N

    Abstract: DIODE MARKING CODE K4N TTS-03
    Text: E R A 1 7 I 1 .OA : Outline Drawings G E N E R A L U SE RECTIFIER DIODE • # € : ■ Features • flg'J'M &fclfc, b m m & y ? § A#1 ' «TSi Ultra small package, possible for 5mm pitch automatic insertion. • S im S tt High reliability lil/jv : Marking


    OCR Scan     		ETi30 I95t/R89) TR MARKING CODE K4N DIODE MARKING CODE K4N TTS-03 PDF

    marking W26 sot23

    Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
    Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters


    Original     		OT23-3 OT-23) OT23-5 OT-25) TK73249M OT23L-8 TK73250M TK73255M marking W26 sot23 SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 128Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V32M4 - 8 Meg x 4 x 4 banks MT46V16M8 - 4 Meg x 8 x 4 banks M T46V8M 16 - 2 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html


    OCR Scan     		128Mb: MT46V32M4 MT46V16M8 T46V8M 66-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 64Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V16M4 - 4 Meg x 4 x 4 banks MT46V8M8 - 2 Meg x 8 x 4 banks M T46V4M 16 - 1 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html


    OCR Scan     		MT46V16M4 MT46V8M8 T46V4M 66-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 128Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V32M4 - 8 Meg x 4 x 4 banks MT46V16M8 - 4 Meg x 8 x 4 banks M T46V8M 16 - 2 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html


    OCR Scan     		128Mb: MT46V32M4 MT46V16M8 T46V8M 66-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 64Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. DOUBLE DATA RATE SDRAM MT46V16M4 - 4 Meg x 4 x 4 banks M T46V8M8 - 2 Meg x 8 x 4 banks M T46V4M 16 - 1 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html


    OCR Scan     		MT46V16M4 T46V8M8 T46V4M 66-PIN PDF

    KIC77

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D/E*T/T2/M/M2 Series KIC77A/B/C/D*T/T2 This IC is a system reset IC built in delay time circuit.


    Original     		KIC77A/B/C/D/E16 50T/T2/M/M2 KIC77A/B/C/D/E* KIC77A/B/C/D* KIC77 240/50/100/200/400ms PDF

    t2F sot 23

    Abstract: marking m2 KIC77
    Text: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D*T/T2/M/M2 Series KIC77A~D*T/M This IC is a system reset IC built in delay time circuit.


    Original     		KIC77A/B/C/D/E16 50T/T2/M/M2 KIC77A/B/C/D* KIC77A KIC77 240/50/100/200/400ms t2F sot 23 marking m2 PDF

    DR-B 2003

    Abstract: drb 2003 PS73633 package MARKING T46 TPS73615-EP TPS73630-EP TPS73618-EP TPS73632-EP TPS73625-EP
    Text: TPS736xx www.ti.com SBVS038T – SEPTEMBER 2003 – REVISED AUGUST 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection FEATURES 1 • 2 • • • • • • • • • • Stable with No Output Capacitor or Any Value or Type of Capacitor


    Original     		TPS736xx SBVS038T 400mA 30mVRMS 100kHz) DR-B 2003 drb 2003 PS73633 package MARKING T46 TPS73615-EP TPS73630-EP TPS73618-EP TPS73632-EP TPS73625-EP PDF

    pjfq

    Abstract: marking PJFQ TPS73618-EP PS73633 TPS73615-EP TPS73630-EP TPS73632-EP
    Text: TPS736xx www.ti.com SBVS038T – SEPTEMBER 2003 – REVISED AUGUST 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection FEATURES 1 • 2 • • • • • • • • • • Stable with No Output Capacitor or Any Value or Type of Capacitor


    Original     		TPS736xx SBVS038T 400mA 30mVRMS 100kHz) pjfq marking PJFQ TPS73618-EP PS73633 TPS73615-EP TPS73630-EP TPS73632-EP PDF

    NMC9346

    Abstract: marking code LOU 9346M NMC9346M14
    Text: NATL SEMICOND i 1EHORY> IDE D | tSG112b □ □fc.lbbS T | T -4 6 -1 3 -2 7 National Semiconductor NMC9346 1024-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9346 is a 1024-bit non-volatile, sequential E2PROM, fabricated using advanced N-channel E2PROM


    OCR Scan     		tSG112b NMC9346 NMC9346 1024-Bit COP400 9W60WN marking code LOU 9346M NMC9346M14 PDF

    NMC9346N

    Abstract: mmc9346 9346M 9346m14 NMC9346EN 9346MM14 MMC9346E MMC9346M NMC9346EM COP400
    Text: NATL SEMICOND i 1EHORY> IDE D | tSG112b □ □fc.lbbS T | T -4 6 -1 3 -2 7 National Semiconductor NMC9346 1024-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9346 is a 1024-bit non-volatile, sequential E2PROM, fabricated using advanced N-channel E2PROM


    OCR Scan     		bSD112t T-46-13-27 NMC9346 1024-Bit COP400 01XXXX D15-D0 NMC9346N mmc9346 9346M 9346m14 NMC9346EN 9346MM14 MMC9346E MMC9346M NMC9346EM PDF

    Untitled

    Abstract: No abstract text available
    Text: ADS5221 ADS 522 1 SBAS262C – APRIL 2003 – REVISED JUNE 2007 12-Bit, 65MSPS Sampling, +3.3V ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION ● ● ● ● ● The ADS5221 is a pipeline, CMOS Analog-to-Digital Converter ADC that operates from a single +3.3V power


    Original     		ADS5221 SBAS262C 12-Bit, 65MSPS ADS5221 12-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: PI6C557-10 Network Clock Generator Product Features Description • 100MHz Differential Output, 33MHz LVCMOS The PI6C557-10 is an integrated 100MHz differential and 33MHz LVCMOS clock generator. It uses a 25MHz quartz crystal to provide an input frequency reference. The high performance internal PLL


    Original     		PI6C557-10 100MHz 33MHz PI6C557-10 33MHz 25MHz 100MHz PDF

    100mhz crystal decoupling

    Abstract: SRX7278 PI6C557-10 clock generator differential output GND33 tdc marking code
    Text: PI6C557-10 Network Clock Generator Product Features Description • 100MHz Differential Output, 33MHz LVCMOS The PI6C557-10 is an integrated 100MHz differential and 33MHz LVCMOS clock generator. It uses a 25MHz quartz crystal to provide an input frequency reference. The high performance internal PLL


    Original     		PI6C557-10 100MHz 33MHz PI6C557-10 33MHz 25MHz 100MHz 100mhz crystal decoupling SRX7278 clock generator differential output GND33 tdc marking code PDF

    SRX7278

    Abstract: No abstract text available
    Text: PI6C557-10 Network Clock Generator Product Features Description • 100MHz Differential Output, 33MHz LVCMOS The PI6C557-10 is an integrated 100MHz differential and 33MHz LVCMOS clock generator. It uses a 25MHz quartz crystal to provide an input frequency reference. The high performance internal PLL


    Original     		PI6C557-10 100MHz 33MHz 25MHz 100MHz --16-pin, PI6C557-10 SRX7278 PDF

    814800

    Abstract: cr2927 814800S
    Text: FUJITSU LTD S3E » • 374<ì75b DDD34D3 ^ ci ci « F C A J c O May 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 8 0 0 A -70/-80/-10 CMOS 512KX.8 BIT FAST PAGE MODE D YNAMIC RAM CMOS 524,288 x 8 bit Fast Page Mode Dynamic RAM The Fujitsu MB814800Ais a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304


    OCR Scan     		DDD34D3 512KX MB814800Ais MB814800A 512x8-bits MB814800A-70/-80/-10 814800 cr2927 814800S PDF

    TSC695E-25MAMQ

    Abstract: D31 SMD CODE qml-38535 smd code marking ra smd marking 242 smd marking T22 TSC695E RA31-0
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV D D D D D D D D D D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A


    Original     		F7400 F-44000, TSC695E-25MAMQ D31 SMD CODE qml-38535 smd code marking ra smd marking 242 smd marking T22 TSC695E RA31-0 PDF

    T79 code marking transistor

    Abstract: scheme tv color nippon MC1374 MC1377 T91B 166NNF-10264AG MC1377P PAL color bar GENERATOR R43A motorola transistor t119
    Text: Order this document by MC1377/D MC1377 Color Television RGB to PAL/NTSC Encoder COLOR TELEVISION RGB to PAL/NTSC ENCODER The MC1377 will generate a composite video from baseband red, green, blue, and sync inputs. On board features include: a color subcarrier


    Original     		MC1377/D MC1377 MC1377 MC1377/D* T79 code marking transistor scheme tv color nippon MC1374 T91B 166NNF-10264AG MC1377P PAL color bar GENERATOR R43A motorola transistor t119 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 64 MEG: x8 DDR SDRAM MICRON I TECHNOLOGY, INC. MT46LC8M8 - 2 Meg x 8 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec­


    OCR Scan     		MT46LC8M8 66-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: = = = 5 HE D " • cì 5 3 c]bcì 0 DG01SM7 D3S ■ ÜJAF WS57C71C ÜIAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power Consumption • Fast Programming


    OCR Scan     		DG01SM7 WS57C71C WS57C71C MIL-STD-883C MIL-STD-883C WS57C71C-35J WS57C71C-35L PDF

    nmc9346n

    Abstract: NMC9346
    Text: NATL SEMÎCOND MEMORY 3 IE D bS0112b Q O L 34SI 4 NMC9346 National Semiconductor NMC9346 1024-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9346 Is a 1024-bit non-volatile, sequential E2PROM, fabricated using advanced N-channel E2PROM


    OCR Scan     		bS0112b NMC9346 NMC9346 1024-Bit COP400 DQb34flS nmc9346n PDF