Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PACKAGE MARKING I60 Search Results

    PACKAGE MARKING I60 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    PACKAGE MARKING I60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: I607 Series 5 mm x 7 mm Ceramic Package SMD VCXO, PECL/LVDS Product Features: Applications: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage


    Original     		PDF LVPEMIL-STD-883, MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8

    E4 SMD

    Abstract: ILSI Vcxo
    Text: I607 Series 5 mm x 7 mm Ceramic Package SMD VCXO, LVPECL / LVDS Product Features: Applications: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 E4 SMD ILSI Vcxo

    Untitled

    Abstract: No abstract text available
    Text: I607 Series 5 mm x 7 mm Ceramic Package SMD VCXO, PECL/LVDS Applications: Product Features: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8

    VCXO

    Abstract: I607 Series
    Text: I607 Series 5 mm x 7 mm Ceramic Package SMD VCXO, LVPECL / LVDS Applications: Product Features: Small Surface Mount Package Low Noise Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 VCXO I607 Series

    Untitled

    Abstract: No abstract text available
    Text: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Applications: Product Features: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8

    Untitled

    Abstract: No abstract text available
    Text: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Applications: Product Features: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8

    Untitled

    Abstract: No abstract text available
    Text: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Product Features: Applications: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8

    E4 SMD

    Abstract: marking code E3 SMD I605-1BC3H-20
    Text: I605 Series 5 mm x 7 mm Ceramic Package SMD VCXO, TTL / HC-MOS Product Features: Applications: Small Surface Mount Package Based Output for many frequencies CMOS/TTL Compatible Logic Levels Compatible with Leadfree Processing SD/HD Video Wireless Base Stations


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 E4 SMD marking code E3 SMD I605-1BC3H-20

    Untitled

    Abstract: No abstract text available
    Text: I606 Series 10 mm x 14 mm, FR-4 SMD VCXO, PECL / LVDS 14.3 Max. Applications: Product Features: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8

    Untitled

    Abstract: No abstract text available
    Text: I606 Series 10 mm x 14 mm, FR-4 SMD VCXO, PECL / LVDS Product Features: 14.3 Max. Applications: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 MIL-STD-202,

    4-SMD marking R1

    Abstract: E4 SMD
    Text: I606 Series 10 mm x 14 mm, FR-4 SMD VCXO, LVPECL / LVDS Product Features: 14.3 Max. Applications: Small Surface Mount Package Frequencies to 750 Mhz Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 MIL-STD-202, 4-SMD marking R1 E4 SMD

    VCXO

    Abstract: I606 Series
    Text: I606 Series 10 mm x 14 mm, FR-4 SMD VCXO, LVPECL / LVDS Applications: Product Features: Small Surface Mount Package Low Noise Pb Free/ RoHS Complient Compatible with Leadfree Processing SD/HD Video Wireless Base Stations Sonet /SDH Server and Storage 1 MHz to 180.000 MHz


    Original     		PDF MIL-STD-883, J-STD-020C, JESD22-B102-D 2x10-8 VCXO I606 Series

    qs marking sot-89

    Abstract: lm7805 sot23 FAIRCHILD MC7805 43B SOT23 dual diode m32 sot-89 Marking 24 zener diode SOT-89 marking ML marking 43A sot23 ml marking sot 89 LM431SCCMFX
    Text: LM431SA/LM431SB/LM431SC Programmable Shunt Regulator Features Description • • • • The LM431SA/LM431SB/LM431SC are three terminal output adjustable regulators with thermal stability over operating temperature range. The output voltage can be set any value between VREF approximately 2.5 volts


    Original     		PDF LM431SA/LM431SB/LM431SC 100mA 50ppm/ qs marking sot-89 lm7805 sot23 FAIRCHILD MC7805 43B SOT23 dual diode m32 sot-89 Marking 24 zener diode SOT-89 marking ML marking 43A sot23 ml marking sot 89 LM431SCCMFX

    Nichicon WEEK CODE

    Abstract: U1150M U1150S Sanyo CAPACITOR DATE CODE MARKING ON PACKING APU1150 panasonic Aluminum capacitor marking date code
    Text: Technology Licensed from International Rectifier Advanced Power Electronics Corp. APU1150 4A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES The APU1150 is a 4A regulator with extremely low dropout voltage using a proprietary bipolar process that


    Original     		PDF APU1150 APU1150 U1150M M1-M-8-G-v01 O-263-5L U1150S Nichicon WEEK CODE U1150M U1150S Sanyo CAPACITOR DATE CODE MARKING ON PACKING panasonic Aluminum capacitor marking date code

    Untitled

    Abstract: No abstract text available
    Text: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86250

    MO-240

    Abstract: No abstract text available
    Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description ̈ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A ̈ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMS8018 MO-240

    Untitled

    Abstract: No abstract text available
    Text: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86250 FDMS86250

    Untitled

    Abstract: No abstract text available
    Text: FDMS86520 N-Channel PowerTrench MOSFET 60 V, 42 A, 7.4 mΩ Features General Description „ Max rDS on = 7.4 mΩ at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		PDF FDMS86520 FDMS86520

    Untitled

    Abstract: No abstract text available
    Text: FDMS86520 N-Channel PowerTrench MOSFET 60 V, 42 A, 7.4 mΩ Features General Description ̈ Max rDS on = 7.4 mΩ at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		PDF FDMS86520

    FDMS8018

    Abstract: MO-240
    Text: FDMS8018 N-Channel PowerTrench MOSFET 30 V, 120 A, 1.8 mΩ Features General Description „ Max rDS on = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMS8018 FDMS8018 MO-240

    FDMS86320

    Abstract: No abstract text available
    Text: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMS86320 FDMS86320

    Untitled

    Abstract: No abstract text available
    Text: FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 mΩ Features General Description ̈ Max rDS on = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		PDF FDMS86540

    Untitled

    Abstract: No abstract text available
    Text: FDMS86320 N-Channel PowerTrench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMS86320

    Untitled

    Abstract: No abstract text available
    Text: CONFORMAL SIPs, MEDIUM PROFILE 4 THROUGH 14 PIN • Medium profile offers increased power handling ■ Wide assortment of pin packages enhances design flexibility bo—ns ■ High temperature design ensures compatibility with all popular board soldering techniques


    OCR Scan     		PDF 4600M 100ppm/Â 250ppm/Â 100ppm/V