IF8A
Abstract: 6MBI8F-120 M604 Diode 1200V 8A igbt 1200v 8A
Text: 6MBI8F-120 8A IGBT Module 1200V / 8A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 低飽和電圧 Low Saturation Voltage 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 豊富な容量系列 Variety of Power Capacity Series
|
Original
|
PDF
|
6MBI8F-120
35kgf
IF8A
6MBI8F-120
M604
Diode 1200V 8A
igbt 1200v 8A
|
igbt 300V 10A
Abstract: 10A motor drive 6MBI10F-060 M604 AC Motor Servo Schematic 6mbi
Text: 6MBI10F-060 10A IGBT Module 600V / 10A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 低飽和電圧 Low Saturation Voltage 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 豊富な容量系列 Variety of Power Capacity Series
|
Original
|
PDF
|
6MBI10F-060
igbt 300V 10A
10A motor drive
6MBI10F-060
M604
AC Motor Servo Schematic
6mbi
|
OF IGBT 600V 15A
Abstract: ac servo amplifier schematic 6MBI15F-060 M604 power diode 600V 15A
Text: 6MBI15F-060 15A IGBT Module 600V / 15A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 低飽和電圧 Low Saturation Voltage 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 豊富な容量系列 Variety of Power Capacity Series
|
Original
|
PDF
|
6MBI15F-060
-10M5)
OF IGBT 600V 15A
ac servo amplifier schematic
6MBI15F-060
M604
power diode 600V 15A
|
6MBI15L-060
Abstract: M604 6MBI15L060
Text: 6MBI15L-060 15A IGBT Module 600V / 15A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High speed switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance
|
Original
|
PDF
|
6MBI15L-060
6MBI15L-060
M604
6MBI15L060
|
20A igbt
Abstract: 600v 20a IGBT M604 6MBI20L-060
Text: 6MBI20L-060 20A IGBT Module 600V / 20A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High speed switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance
|
Original
|
PDF
|
6MBI20L-060
20A igbt
600v 20a IGBT
M604
6MBI20L-060
|
6MBI10L-060
Abstract: M604
Text: 6MBI10L-060 10A IGBT Module 600V / 10A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High speed switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance
|
Original
|
PDF
|
6MBI10L-060
6MBI10L-060
M604
|
6MBI8L-120
Abstract: M604 diode 8a 600v igbt 1200v 8A
Text: 6MBI8L-120 8A IGBT Module 1200V / 8A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High Speed Switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance
|
Original
|
PDF
|
6MBI8L-120
6MBI8L-120
M604
diode 8a 600v
igbt 1200v 8A
|
Untitled
Abstract: No abstract text available
Text: M6035P, M6045P, M6060P www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
PDF
|
M6035P,
M6045P,
M6060P
22-B106
O-247AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
m6045p
Abstract: No abstract text available
Text: M6035P, M6045P & M6060P New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop 3 2 • High forward surge capability
|
Original
|
PDF
|
M6035P,
M6045P
M6060P
O-247AD
2002/95/EC
2002/96/EC
08-Apr-05
m6045p
|
m6045p
Abstract: JESD22-B102D J-STD-002B
Text: New Product M6035P, M6045P & M6060P Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop 3 2 • High forward surge capability
|
Original
|
PDF
|
M6035P,
M6045P
M6060P
O-247AD
2002/95/EC
2002/96/EC
08-Apr-05
m6045p
JESD22-B102D
J-STD-002B
|
M605
Abstract: M6050 high precision TCXO Crystal Oscillators
Text: Introduces M6049/M6050 Series HCMOS/Clipped Sinewave Precision TCXO/TCVCXO Features: Tight Stability 0.5 ppm Low Phase Noise 3.3 V and 5.0 V Versions Frequencies from 8 to 52 MHz Applications: Telecommunications such as SERDES / SONET / WiMAX /
|
Original
|
PDF
|
M6049/M6050
14-pin
M605
M6050
high precision TCXO Crystal Oscillators
|
bridge rectifier 24V AC to 24v dc
Abstract: 1N5408 smd diodes GSIB1560
Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4
|
Original
|
PDF
|
250ns;
DO-204AL
DO-41)
DO-220AA
V-540V;
V-440V
bridge rectifier 24V AC to 24v dc
1N5408 smd diodes
GSIB1560
|
1N4007 MINI MELF
Abstract: No abstract text available
Text: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4
|
Original
|
PDF
|
250ns
DO-220AA
V-540V;
V-440V;
DO-204AL
DO-41)
DO-204AC
1N4007 MINI MELF
|
COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
|
Original
|
PDF
|
vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
|
|
|
GL6ZR27
Abstract: No abstract text available
Text: PREPARED BY: DATE: S,m /16/4? I I -UAW30 ELECTRONIC a- COMFWENTS LUKruKn lx994049 GROUP 1 lUl-4 Opto-Electronic SPiKIFICATION DEVICE SPECIFICATION SPEC.No. Devices Division FOR Light Emitting Diode MODEL No. GL6ZR27 1. These specification sheets include materials protected under the copyright of Sharp Corporation “Sharp” .
|
Original
|
PDF
|
-UAW30
lx994049
GL6ZR27
Jud16/99
GL6ZR27
|
Untitled
Abstract: No abstract text available
Text: PACKAGE DIMENSIONS mm M604 88 6 78 17 — e 75 7 7 7,7,7 3.5 , 3.5 3.5 Tfl j[ + Ei 16.5 2*^5 4 35 / U / t t *•-BO to lì Ls X BXt by 1 B2 EC 'A * —eo| ^ - s — j-x> 60 Collmer Semiconductor, Inc. • Phone: (972) 733-1700 • FAX: (972) 381-9991
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: BIPOLAR TRANSISTOR MODULES Ratings and Specifications 3 1400 volts class power transistor modules • Power transistors and free wheel diodes are built into one package. • Terminal layout in which drive wiring and power wiring do not come accross. Device type
|
OCR Scan
|
PDF
|
2DI30A-140
2DI100A-140
1DI200A-140
2DI200A-020
E33671S
000375e
|
M607
Abstract: 6MBI50L-120
Text: /\°7 — y / W ^ / Power Devices 3 ft 1200 1200 volts class/High speed switching m £ V ces V ges Device type Ic Cont. Pc VCE sat (VQE-15V) (Min.) to (- ton Amps. ^sec. V o te Switching tíme (Max.) tf toff K ft Package Net mass Gram s Votts Volts Amps Watte
|
OCR Scan
|
PDF
|
2MBI25L-120
2MBI50L-120
2MBI75L-120
2MBI100L-120
2MBI150L-120
2MBI200L-120
1MBI200L-120
1MBI300L-120
1MBI400L-120
VQE-15V)
M607
6MBI50L-120
|
M605
Abstract: 1DI500A-030 IC M605 6DI30A-050 IVI60 m601 all type transistor equivalent h2 transistor 6DI15A-050 equivalent EVF31T-050A
Text: Transistor Modules COL L ME R S E M I C O N D U C T O R ES INC MAE D • 25367=12 O Q G l b m T14 « C O L 6-pack power transistor modules 6 pow er transistors and 6 free wheels are built into one package. All term inals are insulated from m ounting plate.
|
OCR Scan
|
PDF
|
EVF33T-040
6DI10A-050
EVF31T-050A
6DI15A-050
6DI20C-050
6DI30A-050
6DI30B-050
6DI50B-050
6DI50C-050
6DI75A-050
M605
1DI500A-030
IC M605
IVI60
m601
all type transistor equivalent
h2 transistor
6DI15A-050 equivalent
|
M124
Abstract: R605A OE R611 m210 g
Text: PACKAGE DIMENSIONS mm T03PL E m a x. ' M110 5.0 ¿ 3 .2 .20 <§ 1 l° ‘ f « 3 ? « 101 o 4. CD 1 2 3 | 1 ! in I 3.0 •Ii 2.0 <n E E 0. 6 „ 3. 0 G a te C o lle c to r E m itte r 5.5 3.5 T03PF M116 ;° J 'eri 2 °± 2 - 0 ., 0.6 ; £ 3.0 I i iS 1 ij
|
OCR Scan
|
PDF
|
T03PL
T03PF
R606A
R604A
R607A
R605A
28max
4-ERG78
M124
R605A
OE R611
m210 g
|
Untitled
Abstract: No abstract text available
Text: 3 B IGBT MODULES Ratings and Specifications 600 volts class 6 in one-package IGBT m o d u les /H ig h speed sw itch in g L series • H ig h s p e e d s w it c h in g • V o lta g e d r iv e m e t h o d p e r m it s lo w p o w e r d r iv e Device type Q
|
OCR Scan
|
PDF
|
6MBI8L-120
6MBI15L-120
6MBI25L-120
6MBI25LB-120
6MBI50L-120
|
m605
Abstract: 1di200 m602 ic 6DI30B-050
Text: Q BIPOLAR TRANSISTOR MODULES Ratings and Specifications 1400 volts class pow er transistor m odules • P o w e r tra n sisto rs and free w h e e l d io d e s are bu ilt into o n e package. • T e rm in a l la yo u t in w h ic h driv e w irin g and p o w e r w irin g d o not c o m e accross.
|
OCR Scan
|
PDF
|
2DI30A-140
2DI100A-140
1DI200A-140
2DI200A-020
m605
1di200
m602 ic
6DI30B-050
|
2mbi25f
Abstract: No abstract text available
Text: 3 IGBT MODULES Ratings and Specifications 1200 v o lts class IGBT m o d u le s /L o w o n -sta te v o lta g e F series • L o w s a t u r a t io n v o lta g e • V o lta g e d r iv e m e t h o d p e r m it s lo w p o w e r d riv e Vets Pc S w itc h in g tim e (M ax.)
|
OCR Scan
|
PDF
|
6MBI8F-120
6MBI15F-120
6MBI25F-120
6MBI50F-120
6MBI15LS-060
2mbi25f
|
6MBI50FA-060
Abstract: 2mbi200f 6MBI10F
Text: /\°7—T / W * / Power Devices • IG B T ïv a - ^ F v 'J -X IG BT Modules, F series 600V ? 7 Z 1 & * > W E B 600 volts class/Low on-state voltage m & Device type 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 1MBI300F-060 1MBI400F-060
|
OCR Scan
|
PDF
|
2MBI50F-060
2MBI75F-060
2MBI100F-060
2MBI150F-060
2MBI200F-060
2MBI300F-060
1MBI300F-060
1MBI400F-060
6MBI30FA-060
6MBI50FA-060
6MBI50FA-060
2mbi200f
6MBI10F
|
