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    PA502FMG Price and Stock

    MOSLEADER PA502FMG-ML

    Single P -20V -3A SOT-23
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    DigiKey PA502FMG-ML Reel 300,000 200
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    PA502FMG Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PA502FMG Niko Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    PA502FMG Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF

    PA502FMG Datasheets Context Search

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    PA502FMG

    Abstract: SEM 2004 p-Channel Logic Level Enhancement Mode niko-sem
    Text: P-Channel Logic Level Enhancement NIKO-SEM PA502FMG Mode Field Effect Transistor SOT-23 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -20 150mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF PA502FMG OT-23 RESISTAN01 Nov-03-2004 PA502FMG SEM 2004 p-Channel Logic Level Enhancement Mode niko-sem

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM33407CA-S •General description ■Features ELM33407CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-20V Id=-3A Rds(on) < 150mΩ (Vgs=-4.5V) Rds(on) < 250mΩ (Vgs=-2.5V)


    Original     		PDF ELM33407CA-S ELM33407CA-S PA502FMG OT-23

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM33407CA-S •概要 ■特点 ELM33407CA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-20V ·Id=-3A ·Rds on < 150mΩ (Vgs=-4.5V) ·Rds(on) < 250mΩ (Vgs=-2.5V) ■绝对最大额定值


    Original     		PDF ELM33407CA-S OT-23 Mar-22-2006 PA502FMG

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM33407CA-S •概要 ■特長 ELM33407CA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-3A ・ Rds on < 150mΩ (Vgs=-4.5V) ・ Rds(on) < 250mΩ (Vgs=-2.5V)


    Original     		PDF ELM33407CA-S PA502FMG OT-23 Mar-22-2006

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM33407CA-S •General description ■Features ELM33407CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-20V Id=-3A Rds(on) < 150mΩ (Vgs=-4.5V) Rds(on) < 250mΩ (Vgs=-2.5V)


    Original     		PDF ELM33407CA-S ELM33407CA-S 150emperature. PA502FMG OT-23