PA2801
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2801 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS on 2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Thin type surface mount package with heat spreader • RoHS Compliant 0.35 0.2 MAXIMUM RATINGS (TA = 25°C, All terminals are
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PA2801
PA2801
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: r i V1.1 SYM A A DISCRETION DATE REVISIONS APPROVED SYM A A SPECIFICATION CURRENT RATING : 1 A INSULATOR RESISTANCE: 5000MG MIN. DIELECTRIC WITHSTANDING : AC 500V. OPERATING TEMPERATURE: - 4 0 -C ~ +105’C. CONTACT MATERIAL : BRASS INSULATOR MATERIAL : STANDARD : P.B.T
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PHa021
-Pa0201G
a021-Pa0301G
a021-Pa0401G
a021-Pa0501G
a021-Pa0601G
a021-Pa0701G
a021-Pa0801G
a021-Pa0901G
PHa021
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