PA2460T1Q Search Results

PA2460T1Q Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UPA2460T1Q-E1-AX		Renesas Electronics Corporation	N-Channel Mos Field Effect Transistor For Switching

PA2460T1Q Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet PA2460T1Q R07DS0185EJ0100 Rev.1.00 Dec 06, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2460T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2460T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for	Original	PDF	PA2460T1Q R07DS0185EJ0100 PA2460T1Q

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: Preliminary Data Sheet PA2460T1Q R07DS0185EJ0100 Rev.1.00 Dec 06, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2460T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2460T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for

Original

PDF

PA2460T1Q R07DS0185EJ0100 PA2460T1Q