PA1918 Search Results

PA1918 Result Highlights (3)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UPA1918TE-T1-AT		Renesas Electronics Corporation	Power MOSFETs for Automotive
UPA1918TE-T1-A		Renesas Electronics Corporation	Power MOSFETs for Automotive
UPA1918TE(0)-T1-AT		Renesas Electronics Corporation	Power MOSFETs for Automotive

PA1918 Price and Stock

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Renesas Electronics Corporation UPA1918TE(0)-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	UPA1918TE(0)-T1		4,652			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation UPA1918TE0T1AT Small Signal Field-Effect Transistor, 3.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	UPA1918TE0T1AT		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

PA1918 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SC-95 Abstract: marking TS pa1918 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1918 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 FEATURES PACKAGE DRAWING Unit: mm 2.8 ±0.2 The µPA1918 is a switching device, which can be driven	Original	PDF	PA1918 PA1918 SC-95 marking TS
pa1918 Abstract: SC-95 3uPA1918 Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1918 P チャネル MOS FET スイッチング用 µPA1918 は，4.0 V 電源系による直接駆動が可能なス外形図（単位：mm）イッチング素子です。	Original	PDF	PA1918 PA1918 PA1918TE SC-95 5926JJ1V0DS G15926JJ1V0DS SC-95 3uPA1918
MARKING TS Abstract: 3uPA1918 Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA1918 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION • 4.0 V drive available • Low on-state resistance RDS(on)1 = 143 mΩ MAX. (VGS = –10 V, ID = –2.0 A)	Original	PDF	PA1918 PA1918 MARKING TS 3uPA1918
SC-95 Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
MPA2733GR Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	O-263 O-252 mPA672T. mPA675T. mPA677TB. mPA678TB. mPA679TB. M8E0710J D18669JJ3V0SG D18669JJ3V0SG003 MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
PA1915 Abstract: m0406 m0339 M-0339 PA19 PA1901 RS0018 PA1912 PA1913 PA1914 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	PA1901 PA1902 PA1911A PA1912 PA1913 PA1914 PA1915 PA1916 PA1917 PA1918 PA1915 m0406 m0339 M-0339 PA19 PA1901 RS0018 PA1912 PA1913 PA1914
SC-95 Abstract: PA1918 uPA1918 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	PA1918 PA1918 5926JJ1V0DS G15926JJ1V0DS SC-95 uPA1918