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    PA15 APPLICATION NOTE Search Results

    PA15 APPLICATION NOTE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TSL1401CCS-RL2 Rochester Electronics TSL1401 - 128 x 1 Linear Sensor Array with hold. Please note, an MOQ and OM of 250 pcs applies. Visit Rochester Electronics Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy

    PA15 APPLICATION NOTE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Nokia lcd

    Abstract: Nokia 6100 LCD EVK1101 S1D15G10 SMU4 citizen smd microphone nokia lcd display LCD S1D15G10 10n ceramic capacitor nokia lcd 6100
    Text: AVR32134: AVR32 UC3 3D Graphic Rendering Application 32-bit Features Microcontrollers • 3D Rotating Cube Application • Graphical 3D Software Library Engine • EVK1101 Extension-Board Schematics – – – – Application Note Graphical LCD Display Audio Codec


    Original     		PDF AVR32134: AVR32 32-bit EVK1101 32-bit 128x128 32100C Nokia lcd Nokia 6100 LCD S1D15G10 SMU4 citizen smd microphone nokia lcd display LCD S1D15G10 10n ceramic capacitor nokia lcd 6100

    1N4148

    Abstract: 1N914 2N4416 PA15 PA15A
    Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA


    Original     		PDF PA15A 546-APEX 200mA 200mA 350mA PA15U 1N4148 1N914 2N4416 PA15 PA15A

    PA15 Application Note

    Abstract: No abstract text available
    Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA


    Original     		PDF PA15A 546-APEX 200mA SIP02) 350mA PA15U PA15 Application Note

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA


    Original     		PDF PA15A 546-APEX 200mA 350mA PA15U

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA


    Original     		PDF PA15A 546-APEX 200mA 10-pin 200mA PA15U

    PA15 Application Note

    Abstract: 2N4416 equivalent 10-PIN 1N4148 1N914 2N4416 PA15 PA15A pa15a apex 2N5457-2N5459
    Text: ����������������������������������������� ������������ ��������������������������������������������������������������


    Original     		PDF 200mA 10-PIN 200mA 350mA 1N4148 1N914 2N4416 2N5457-2N5459 PA15U PA15 Application Note 2N4416 equivalent PA15 PA15A pa15a apex

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA


    Original     		PDF PA15A 546-APEX 200mA SIP02) 350mA PA15U

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS PA15 • PA15A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST LOW QUIESCENT CURRENT — 3.0mA MAX HIGH OUTPUT CURRENT — 200mA


    Original     		PDF PA15A 546-APEX 200mA 350mA PA15U

    STM32F10xxx

    Abstract: AN2569 STM32F10xx PA13 PA15 STM32F STM32F10xxx jtag
    Text: AN2569 Application note STM32F10xxx GPIO application examples Introduction This application note is intended to provide practical application examples of the STM32F10xxx GPIO peripheral use. This document, its associated firmware, and other such application notes are written to


    Original     		PDF AN2569 STM32F10xxx AN2569 STM32F10xx PA13 PA15 STM32F STM32F10xxx jtag

    TC58NVG0S3ETA00

    Abstract: TC58NVG0S3ET tc58nvg0s3eta tc58nvg0s3e tc58nvg DIN2111 PA15 Time22 80XX toshiba TC58NVG
    Text: TC58NVG0S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NVG0S3ETA00 TC58NVG0S3E 1024blocks. 2112-byte 2010-05-21C TC58NVG0S3ETA00 TC58NVG0S3ET tc58nvg0s3eta tc58nvg DIN2111 PA15 Time22 80XX toshiba TC58NVG

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S

    TC58NVG0S3ETA00

    Abstract: TC58NVG0S3ET TC58NVG0S3E tc58nvg0s3eta 2010-01-25C
    Text: TC58NVG0S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NVG0S3ETA00 TC58NVG0S3E 1024blocks. 2112-byte 2010-01-25C TC58NVG0S3ETA00 TC58NVG0S3ET tc58nvg0s3eta 2010-01-25C

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NVG0S3ETAI0 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C

    TC58NVG0S3ETA00

    Abstract: TC58NVG0S3ET tc58nvg0s3eta TC58NVG0S3E TC58NVG DIN2111 PA15 2011-03-01C
    Text: TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NVG0S3ETA00 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3ETA00 TC58NVG0S3ET tc58nvg0s3eta TC58NVG DIN2111 PA15 2011-03-01C

    TC58NVG0S3EBA

    Abstract: TC58NYG0S3EBAI4 TC58NYG0S3E P-TFBGA63-0911-0 TC58NYG0S R/PA15
    Text: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NYG0S3EBAI4 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3EBA TC58NYG0S3EBAI4 P-TFBGA63-0911-0 TC58NYG0S R/PA15

    TC58NVG0S3EBAI4

    Abstract: TC58NVG0S3EBA tc58nvg0s3e tc58nvg0s3eta TC58NVG0S3ETA00 TC58NVG0S3ET
    Text: TC58NVG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NVG0S3EBAI4 TC58NVG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3EBAI4 TC58NVG0S3EBA tc58nvg0s3eta TC58NVG0S3ETA00 TC58NVG0S3ET

    TC58NYG0S3ETAI0

    Abstract: TC58NYG0S
    Text: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NYG0S3ETAI0 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETAI0 TC58NYG0S

    MTC-20156

    Abstract: RC32355 ADSL MTC-20156 mtc diode MTC20156 alcatel mtc MTC-20154 AN-304 MTK-20150 RC32351
    Text: Connecting RC32355/RC32351 to the Alcatel ADSL Chipset RC32355/RC32351 Application Note AN-304 By Harold Gomard Notes Revision History July 23, 2001: Initial publication. December 18, 2001: Added RC32351 Background The RC32355/RC32351 Integrated Communications Processor ICP meets the requirements of various


    Original     		PDF RC32355/RC32351 AN-304 RC32351 RC32355/RC32351 32-bit MTC-20156. MTC-20156 RC32355 ADSL MTC-20156 mtc diode MTC20156 alcatel mtc MTC-20154 AN-304 MTK-20150 RC32351

    STM32F100RBT6B

    Abstract: stm32-discovery UM0919 fcm1608-0603 STM32 Discovery MB913 FCM1608 ESA8.00000F20D25F STM32F10* I2C stm32 value line discovery pin configuration
    Text: UM0919 User Manual STM32VLDISCOVERY STM32 Value line Discovery Introduction The STM32 Value line Discovery evaluation board helps you discover the STM32 Value line features and to develop and share your applications. It is based on an STM32F100RBT6B and includes ST-Link embedded debug tool interface, LEDs and push buttons.


    Original     		PDF UM0919 STM32VLDISCOVERY STM32 STM32F100RBT6B STM32F100RBT6B stm32-discovery UM0919 fcm1608-0603 STM32 Discovery MB913 FCM1608 ESA8.00000F20D25F STM32F10* I2C stm32 value line discovery pin configuration

    STM32F100rb

    Abstract: ESA8.00000F20D25F fcm1608-0603 STM32-DISCOVERY FCM1608 5075BMR-05-SM MB913 STM32F100 MC306-G-06Q-32.768 UM0627
    Text: UM0919 User Manual STM32VLDISCOVERY STM32 value line Discovery Introduction The STM32 value line Discovery evaluation board helps you discover the STM32 value line features and to develop and share your applications. It is based on an STM32F100RB and includes ST-Link embedded debug tool interface, LEDs and push buttons.


    Original     		PDF UM0919 STM32VLDISCOVERY STM32 STM32F100RB STM32F100RBT6B 64-pin ESA8.00000F20D25F fcm1608-0603 STM32-DISCOVERY FCM1608 5075BMR-05-SM MB913 STM32F100 MC306-G-06Q-32.768 UM0627

    zener diode reference guide

    Abstract: 150mF capacitor 400V SIP12 package DHW2805S schematic diagram 90v dc motor speed controller Piezo speaker crossover EK06 EK07 EK13 PA44
    Text: M I C R O T E C H N O L O G Y Contents Please note: This document contains data sheets released after the July 1998 issue of the Apex Microtechnology Volume 8 Data Book CD-ROM until the publication of this Volume 8.5 Update in February 1999. For additional updates and revisions, please see


    Original     		PDF 5980reliable, PA93U zener diode reference guide 150mF capacitor 400V SIP12 package DHW2805S schematic diagram 90v dc motor speed controller Piezo speaker crossover EK06 EK07 EK13 PA44

    Untitled

    Abstract: No abstract text available
    Text: H IG H V O L T A G E P O W E R O P E R A T IO N A L A M P L IF IE R S A P è PA15 • PA15A c H T T P ://W W W .APEXM ICROTECH.COM 800 546-APEX (800) 546-2 739 FEATURES • HIGH VO LTAGE — 4 5 0 V (± 2 2 5 V ) • LOW COST • LOW Q U IESC EN T CURREN T — 3 .0 m A MAX


    OCR Scan     		PDF PA15A 546-APEX PA15U

    Untitled

    Abstract: No abstract text available
    Text: \ HIGH VOLTAGE POW ER O PERATIO NAL A M PLIFIERS HP f S f m i c i o t e c i n o l o g v PA15 • PA15A HTT P I/ / W W W .A P EX MI C R0 T E C H . C 0 M 800 546-APEX (800) 5 4 6 - 2 73 9 FEATURES • • • • • HIGH VOLTAGE — 450V (±225V) LOW COST


    OCR Scan     		PDF PA15A 546-APEX 200mA 350mA PA15U

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS v JÄPBC M I C R O T E C H N O L O G Y PA15 • PA15A http ://W W W .A P E X M IC R D TE C H .O O M 8 0 0 5 4 6 - APEX (8 0 0 ) 5 4 6 -2 7 3 9 FEATURES • HIGH VOLTAGE— 450V (±225V) • LCWOOST • LCW GUI E3CBÍT CURRBJT— 3.0mA MAX


    OCR Scan     		PDF PA15A 200mA PA15U