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    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM36401EA-S •General description ■Features ELM36401EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3A Rds(on) < 85mΩ (Vgs=-10V) Rds(on) < 118mΩ (Vgs=-4.5V)


    Original     		PDF ELM36401EA-S ELM36401EA-S ModeELM36401EA-S PA102FAG Mar-28-2006

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G