f 9444
Abstract: P8444 diode F4 AJYE P9444 8T24 dara yB 544
Text: P8444 DC COMPONENTS CO., LTD. P RHPS PECRIFIEP QOECIAKIQRQ P9444 RECHMICAK QOECIFICARINMQ NF HIGH TNKRAGE QIKICNM PECRIFIEP TNKRAGE PAMGE 2 8444 jf 9444 Tfcji CSPPEMR 2 436 Adg]h] FEARSPEQ / / / / Kfm [fij Kfm c]YbY_] Kfm ^fhmYh\ lfcjY_] \hfg Ha_` [khh]ej [YgYZacajo
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P8444
P9444
DN259
LIK2QRD2646E1
-P8444
P9444.
f 9444
P8444
diode F4
AJYE
P9444
8T24
dara
yB 544
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f 9444
Abstract: P8444 P9444 bcf 69 p944 8444 8T24 AJYE
Text: P8444 DC COMPONENTS CO., LTD. P RHPS PECRIFIEP QOECIAKIQRQ P9444 RECHMICAK QOECIFICARINMQ NF HIGH TNKRAGE QIKICNM PECRIFIEP TNKRAGE PAMGE 2 8444 jf 9444 Tfcji CSPPEMR 2 436 Adg]h] FEARSPEQ / / / / Kfm [fij Kfm c]YbY_] Kfm ^fhmYh\ lfcjY_] \hfg Ha_` [khh]ej [YgYZacajo
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Original
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PDF
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P8444
P9444
DN259
LIK2QRD2646E1
-P8444
P9444.
f 9444
P8444
P9444
bcf 69
p944
8444
8T24
AJYE
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p8444
Abstract: transistor vds rds 12 id 80a to220
Text: STB/P8444 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 40V 80A 4.8 @ VGS=10V Rugged and reliable. TO-220 and TO-263 Package.
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STB/P8444
O-220
O-263
O-220
O-263AB
p8444
transistor vds rds 12 id 80a to220
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