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    VDR 0047

    Abstract: No abstract text available
    Text:  UTRON Preliminary Rev. 0.2 UT61L25616 256K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Preliminary Rev. 0.2 1. Revised Pin number UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.


    Original     		UT61L25616 P80076 UT61L25616 304-bit UT61L25616MC-10 UT61L25616MC-12 UT61L25616MC-15 VDR 0047 PDF

    VDR 0047

    Abstract: UT61L25616MC-10 Utron Technology
    Text:  UTRON Rev. 1.0 UT61L25616 256K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY REVISION DESCRIPTION Preliminary Rev. 0.1 Original. Preliminary Rev. 0.2 1. Revised Pin number Rev. 1.0 1. Revised Standby current : 10/2mA max 0.5mA(typ.) 2. Delete ICC1, ICC2


    Original     		UT61L25616 10/2mA P80076 16MC-15 UT61L25616MCL-10 UT61L25616MCL-12 UT61L25616MCL-15 VDR 0047 UT61L25616MC-10 Utron Technology PDF