Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET ELM34802AA-N •General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V)
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ELM34802AA-N
ELM34802AA-N
P6803HVG
May-10-2006
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET ELM34802AA-N •General description ■Features ELM34802AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=4.5A Rds(on) < 68mΩ (Vgs=10V) Rds(on) < 98mΩ (Vgs=5V)
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ELM34802AA-N
ELM34802AA-N
P6803HVG
May-10-2006
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P70N02LDG
Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG
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O-263
P45N02LSG
P45N03LTG
P75N02LSG
P75N02LTG
P0903BSG
P0903BTG
P3055LSG
P3055LTG
P50N03LSG
P70N02LDG
p0603bdg
P60N03LDG
PA102FDG
P2503NPG
P45N02LDG
P0603BD
P1703BDG
P0403BDG
P3004ND5G
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ELM34802AA
Abstract: No abstract text available
Text: 双 N 沟道 MOSFET ELM34802AA-N •概要 ■特点 ELM34802AA-N 是 N 沟道低输入电容低工作电压、 •Vds=30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=4.5A ·Rds on < 68mΩ (Vgs=10V) ·Rds(on) < 98mΩ (Vgs=5V) ■绝对最大额定值
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ELM34802AA-N
May-10-2006
ELM34802AA
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Untitled
Abstract: No abstract text available
Text: デュアルパワー N チャンネル MOSFET ELM34802AA-N •概要 ■特長 ELM34802AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V オン抵抗という特性を備えた大電流デュアルパワー ・ Id=4.5A MOSFET です。 ・ Rds on < 68mΩ (Vgs=10V)
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ELM34802AA-N
May-10-2006
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