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    P6 SMD DIODE Search Results

    P6 SMD DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    P6 SMD DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code ya SMD Transistor

    Abstract: nxp sot363 MARKING 16
    Text: TS SO P6 PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMG85XP OT363 SC-88) marking code ya SMD Transistor nxp sot363 MARKING 16

    PHOTOTRANSISTOR 3 PIN

    Abstract: 817 photo coupler DIODE m1 LED phototransistor IC PACKAGE led phototransistor 3 pin ir receiver smd diode 2 pin 3 pin phototransistor phototransistor blue light lens photodiode phototransistor phototransistor, 850nm
    Text: INFRARED SERIES PART NO. SYSTEM z INFRARED EMITTING DIODE z PHOTOTRANSISTORS z PHOTODIODE LAMP CATEGORY LED PRODUCT PACKAGE TYPE LENS APPEARANCE B - xxx - SPECIAL DEVICE SERIES IDENTIFICATION CHIP LEAD TYPE LAMP CATEGORY: CHIP: IR : Infrared Emitting Diode


    Original     		PDF 940nm 880nm 850nm PHOTOTRANSISTOR 3 PIN 817 photo coupler DIODE m1 LED phototransistor IC PACKAGE led phototransistor 3 pin ir receiver smd diode 2 pin 3 pin phototransistor phototransistor blue light lens photodiode phototransistor phototransistor, 850nm

    Untitled

    Abstract: No abstract text available
    Text: CY8CKIT-030 PSoC 3 Development Kit Guide Doc. # 001-61038 Rev. *H Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2011-2013. The information contained herein is subject to change without notice.


    Original     		PDF CY8CKIT-030 CY8CKIT-030

    50mil keyed smd connector

    Abstract: No abstract text available
    Text: CY8CKIT-030 PSoC 3 Development Kit Guide Doc. # 001-61038 Rev. * Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2011. The information contained herein is subject to change without notice. Cypress


    Original     		PDF CY8CKIT-030 151-8030-E 50mil keyed smd connector

    mini projects based on opamp

    Abstract: CY8C5588AXI-060 mini projects based on psoc5 kit voltage convertor 9V DC to 3,3V DC mini projects based on psoc kit CY8CKIT-050 CY7C68013A-56LTXC CY8C5588AXI CSTCE24M0XK2010R0 smd RNC SOT-223
    Text: CY8CKIT-050 PSoC 5 Development Kit Guide Doc. # 001-65816 Rev. *A Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2011. The information contained herein is subject to change without notice. Cypress


    Original     		PDF CY8CKIT-050 151-8030-E mini projects based on opamp CY8C5588AXI-060 mini projects based on psoc5 kit voltage convertor 9V DC to 3,3V DC mini projects based on psoc kit CY7C68013A-56LTXC CY8C5588AXI CSTCE24M0XK2010R0 smd RNC SOT-223

    Untitled

    Abstract: No abstract text available
    Text: SMD LED LTW-X45T-PH 1. Description The LTW LiteOn White LED is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting. It gives you total design freedom and


    Original     		PDF LTW-X45T-PH 35/40/20mA BNS-OD-FC002/A4

    Zener Diodes

    Abstract: 55c5v1
    Text: SMD Zener Diodes CZRH3-55C2V4-G Thru. CZRH3-55C39-G Voltage: 2.4 to 39 Volts Power: 150 mWatts RoHS Device Features SOT-523 -Planar die construction. -150mW power dissipation. 0.067 1.70 0.059(1.50) -Ultra small surface mount package. 3 -Lead free/RoHS compliant.


    Original     		PDF CZRH3-55C2V4-G CZRH3-55C39-G OT-523 -150mW OT-523, MIL-STD202G CZRG3-55C39-G) QW-BZ017 Zener Diodes 55c5v1

    Untitled

    Abstract: No abstract text available
    Text: SMD Zener Diodes CZRH3-55C2V4-G Thru. CZRH3-55C39-G Voltage: 2.4 to 39 Volts Power: 150 mWatts RoHS Device Features SOT-523 -Planar die construction. -150mW power dissipation. 0.067 1.70 0.059(1.50) -Ultra small surface mount package. 3 -Lead free/RoHS compliant.


    Original     		PDF CZRH3-55C2V4-G CZRH3-55C39-G OT-523 -150mW OT-523, MIL-STD202G CZRG3-55C39-G) QW-BZ017

    marking CODE R SMD DIODE

    Abstract: smd diode marking code SMD MARKING CODE transistor BB146 UHF variable capacitance diode "Variable Capacitance Diode" p6 code marking for diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB146 UHF variable capacitance diode Product specification 1996 Sep 20 Philips Semiconductors Product specification UHF variable capacitance diode BB146 FEATURES • Ultra high ratio • Excellent matching to 1.6% DMA


    Original     		PDF M3D049 BB146 MAM130 BB146 OD323 marking CODE R SMD DIODE smd diode marking code SMD MARKING CODE transistor UHF variable capacitance diode "Variable Capacitance Diode" p6 code marking for diode

    smd rf transistor marking

    Abstract: HVC136 marking SMD P6 RF25
    Text: Diodes SMD Type Silicon Epitaxial Trench Pin Diode HVC136 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Adopting the trench structure improves low capacitance. C = 0.45 pF max Low forward resistance. (rf=2.5 max) +0.1


    Original     		PDF HVC136 OD-523 77max 07max 200pF, smd rf transistor marking HVC136 marking SMD P6 RF25

    BB146

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB146 UHF variable capacitance diode Product specification File under Discrete Semiconductors, SC01 1996 Sep 20 Philips Semiconductors Product specification UHF variable capacitance diode BB146 FEATURES • Ultra high ratio


    Original     		PDF M3D049 BB146 MAM130 BB146

    Untitled

    Abstract: No abstract text available
    Text: D ata Sheet 200 mW EPITAXIAL PLANAR DIODES semiconductor Description Mechanical Dimensions 3 *3 £ Features • INDUSTRY STANDARD SOT-23 PACKAGE S M EETS UL SPECIFICATION S^V-O ■ PLANAR PRO CESS ■ 200 mW POWER DISSIPATION FM BBA S19.21 E le ctrica l C h a racte ristics 0 2 5 °C .


    OCR Scan     		PDF OT-23 BBAS19 BBAS20 BBAS21 CurC10 21X21X5 48X22X36cm 21X9X8 51X25X30cm

    Untitled

    Abstract: No abstract text available
    Text: 500 mW EPITAXIAL PLAN AR DIODES D ata Sh eet miconductor Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0 IN4448 E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 ° C . M axim u m R a tin g s


    OCR Scan     		PDF DO-35 IN4448 51X25X30cm 21X21X5 47X22X27cm

    Untitled

    Abstract: No abstract text available
    Text: 500 mW EPITAXIAL PLANAR DIODES D ata Sheet m iconductor Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ MEETS UL SPECIFICATION 94V-0 1N4151 E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 ° C . M a x h n u n R atings


    OCR Scan     		PDF DO-35 1N4151 IN4151 51X25X30cm 21X21X5 47X22X27cm

    Untitled

    Abstract: No abstract text available
    Text: 250 mW EPITA XIA L PLANAR DIODES D a ta Sheet Semiconductor Mechanical Dimensions JEDEC DO-35 . t .060.1 n .120 .200 " I . 1.00 tVD. r 1 t Features • INDUSTRY STANDARD DO-35 PACKAGE ■ MEETS UL SPECIFICATION 94V-0 ■ PLANAR PROCESS ■ 250 mW POWER DISSIPATION


    OCR Scan     		PDF DO-35 1N914 21X21X5 48X22X36cm 21X9X8 51X25X30cm

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 200 mW EPITAXIAL PLANAR DIODES Semiconductor Mechanical Dimensions Description Pin 3 Pin 1HC Pin 2 Features • INDUSTRY STANDARD SOT-23 PACKAGE ■ MEETS UL SPECIFICATION 94V-0 ■ PLANAR PROCESS ■ 200 mW POWER DISSIPATION E le c tr ic a l C h a r a c te r is tic s 9


    OCR Scan     		PDF OT-23 B4148 21X21X5 48X22X36cm 21X9X8 51X25X30cm

    Untitled

    Abstract: No abstract text available
    Text: 200 mW EPITAXIAL PLANAR DIODES D a ta Sheet Semiconductor Mechanical Dimensions Description Pin 3 1 P ln lN C ! Pin 2 Features • PLANAR PROCESS ■ INDUSTRY STANDARD SOT-23 PACKAG E ■ 200 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0 E le c t r ic a l C h a r a c t e r is t ic s 6


    OCR Scan     		PDF OT-23 BBAV70 51X25X30cm 21X21X5 47X22X27cm

    Untitled

    Abstract: No abstract text available
    Text: 200 mW EPITAXIAL PLANAR DIODES D ata Sheet Semiconductor Description Mechanical Dimensions Pin 3 PlnlNC Pin 2 Features • INDUSTRY STANDARD SOT-23 PACKAGE ■ M EETS UL SPECIFICATION 94V-0 ■ PLANAR PRO CESS ■ 200 mW POWER DISSIPATION E le c t r ic a l C h a r a c t e r is t ic s


    OCR Scan     		PDF OT-23 BBAV99 21X21X5 48X22X36cm 21X9X8 51X25X30cm

    Untitled

    Abstract: No abstract text available
    Text: D atash eet 500 mW EPITAXIAL PLAN AR DIODES Semiconductor M echanical Dim ensions JEDEC DO-35 . t .0 6 0 1 .0 90 Ip 1 .1 2 0 , 1 .0 0 h D . , 1 1 t .0 24 typ. Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0


    OCR Scan     		PDF DO-35 IN4148 51X25X30cm 21X21X5 47X22X27cm

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 1.0 Amp SURFACE MOUNT PLASTIC SILICON DIODES Semiconductor Mechanical Dimensions Description Package |* 4.3/4.7 -*j ♦ Features a LOW COST B LOW FORWARD VOLTAGE WITH LOW LEAKAG E CURRENT a HIGH CURRENT CAPABILITY B M EETS UL SPECIFICATION 94V-0


    OCR Scan     		PDF 51X25X30cm 21X21X5 47X22X27cm KBPC10

    Untitled

    Abstract: No abstract text available
    Text: 2 W att ZEN ER DIODES M V to 200V D a ta Sheet iemiconductor Features • PRO ELECTRON REGISTRATION ■ HIGH SURGE CAPABILITY—50 W 10mA Maximum Ratings ■ WIDE VOLTAGE RAN G E-34 to 200V ■ MEETS UL SPECIFICATION 84V-0 Units BZY47C3V3.C200 DC Power Dissipation with TA = > = 70°C .PD


    OCR Scan     		PDF BZY47C3V3. 51X25X30cm 21X21X5 47X22X27cm KBPC10

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 1/2Watt ZENER DIODES 4.7V to 24V semiconductor Mechanical Dimensions JEDEC DO-35 M § T .0601 .090 I 1 _L 1 120 .200 r . 1.00 Min. 1 " ~ T . Features • WIDE VOLTAGE RANGE ■ 5 & 10% VOLTAGE TOLERANCES AVAILABLE ■ MEETS UL SPECIFICATION 94V-0


    OCR Scan     		PDF 1N5230. Zener25 21X21X5 48X22X36cm 21X9X8 51X25X30cm

    Untitled

    Abstract: No abstract text available
    Text: C l Semiconductor Data Sheet 1 W att ZENER DIODES (& 3V to 100V Mechanical Dimensions JEDEC DO-41 i * T .0801 205 .160 t . 1.00 M in. * _L 1 t Features • WIDE VOLTAGE RANGE ■ MEETS UL SPECIFICATION 94V-0 ■ 5 & 10% VOLTAGE TOLERANCES AVAILABLE Maximum Ratings


    OCR Scan     		PDF DO-41 21X21X5 48X22X36cm 21X9X8 51X25X30cm 47X22X27cm

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 2.4V to 110V M LL ZEN ER DIODES 1/2 Watt Semiconductor S Mechanical Dimensions Description -K U E W U M S - - 1 for BAND I 1 O1 f* _ M 1 / ( ) o m tu m 0014 (0 4 0 0 •* " ■ ’x '- h m 0 1 4 6 0 .seat <* M , 0191(3.a tT ). D im ensions in in che s


    OCR Scan     		PDF RANGES24 51X25X30cm 21X21X5 47X22X27cm KBPC10