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    n mosfet depletion pspice model parameters

    Abstract: P38N06 diode AR s1 65 n mosfet pspice parameters NMOS depletion pspice model mosfet 20n N CHANNEL DEPLETION MOSFET TRANSISTOR SDM M6 STP38N06 SDM M6
    Text: P38N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP38N06 P38N06 100oC 175oC O-220 n mosfet depletion pspice model parameters P38N06 diode AR s1 65 n mosfet pspice parameters NMOS depletion pspice model mosfet 20n N CHANNEL DEPLETION MOSFET TRANSISTOR SDM M6 STP38N06 SDM M6 PDF