220g
Abstract: No abstract text available
Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible
|
Original
|
50V/500V
P2H4M441H
P2H4M440H
300KHz
P2H4M441H
150iMAX
56i/W
-441H
-440H
220g
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET 30A 450 500V 1 PD4M441H P2H4M441H PD4M440H
|
Original
|
PD4M441H
P2H4M441H
PD4M440H
|
PDF
|
NSC-100
Abstract: Diode Gfg 33 PD4M440H S2 DIODE
Text: MOSFET 30A 450~500 V PD4M441H PD4M440H P2H4M441H P2H4M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）
|
Original
|
PD4M441H
PD4M440H
P2H4M441H
P2H4M440H
PD4M441H440H
P2H4M441H440H
Weight220g
Duty50
PD4M441H/P2H4M441H
NSC-100
Diode Gfg 33
S2 DIODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible
|
Original
|
50V/500V
P2H4M441H
P2H4M440H
300KHz
P2H4M441H
P2H4M44xH
|
PDF
|
IR 440H
Abstract: No abstract text available
Text: MOSFET 30A 450～ 450～500V PD4M441H/440H PD4M441H P2H4M441H PD4M440H P2H4M440H P2H4M441H/440H 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage
|
Original
|
50500V
PD4M441H/440H
PD4M441H
PD4M440H
P2H4M441H
P2H4M440H
P2H4M441H/440H
PD4M441H/P2H4M441H
PD4M440H/P2H4M440H
-441H
IR 440H
|
PDF
|
P2H4M441H
Abstract: 2015A 441H P2H4M440H PD4M440H PD4M441H IR 440H
Text: MOSFET 30A 450～ 450～500V PD4M441H/440H PD4M441H P2H4M441H PD4M440H P2H4M440H P2H4M441H/440H 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS
|
Original
|
50500V
PD4M441H/440H
PD4M441H
P2H4M441H
PD4M440H
P2H4M440H
P2H4M441H/440H
PD4M441H/P2H4M441H
PD4M440H/P2H4M440H
P2H4M441H
2015A
441H
P2H4M440H
PD4M440H
PD4M441H
IR 440H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Separated Circuit Dimension mm 108.0 * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible
|
Original
|
50V/500V
P2H4M441H
P2H4M440H
300KHz
P2H4M441H
-441H
-440H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET 30A 450~500 V PD4M441H PD4M440H P2H4M441H P2H4M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）
|
Original
|
PD4M441H
PD4M440H
P2H4M441H
P2H4M440H
PD4M441H440H
P2H4M441H440H
Weight220g
Duty50
PD4M441H/P2H4M441H
|
PDF
|
PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
|
Original
|
|
PDF
|
508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
|
Original
|
|
PDF
|
PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
|
Original
|
C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
|
PDF
|
FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
|
Original
|
|
PDF
|
PF0012
Abstract: Pch MOS FET
Text: - 160 - S £ P2H10M441H P2H10M441L P2H4M440H P2H4M440L tt € m & B*W B*W B b* w - « â f t ? 1 » H V JR X [m * vos* l » * (V) fë £ 3 P d /P c h (A) * * m MOS N 450 DSS 85 D 230 MOS N 450 DSS 70 D 230 MOS N 500 DSS 30 D 230 MOS N 500 DSS 30 D 230
|
OCR Scan
|
|
PDF
|