P2504edg
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM32407LA-S •General description ■Features ELM32407LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-18A Rds(on) < 25.8mΩ (Vgs=-10V) Rds(on) < 40.0mΩ (Vgs=-7V)
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ELM32407LA-S
ELM32407LA-S
P2504EDG
O-252
MAR-29-2006
P2504edg
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Untitled
Abstract: No abstract text available
Text: 单 P 沟道 MOSFET ELM32407LA-S •概要 ■特点 ELM32407LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-40V ·Id=-18A ·Rds on < 25.8mΩ (Vgs=-10V) ·Rds(on) < 40mΩ (Vgs=-7V) ■绝对最大额定值
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ELM32407LA-S
04EDG
O-252
MAR-29-2006
P2504EDG
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P2504E
Abstract: P2504EDG
Text: シングル P チャンネル MOSFET ELM32407LA-S •概要 ■特長 ELM32407LA-S は低入力容量 低電圧駆動、 低 ・ Vds=-40V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-18A ・ Rds on < 25.8mΩ (Vgs=-10V) ・ Rds(on) < 40.0mΩ (Vgs=-7V)
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ELM32407LA-S
P2504EDG
O-252
MAR-29-2006
P2504E
P2504EDG
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P70N02LDG
Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG
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O-263
P45N02LSG
P45N03LTG
P75N02LSG
P75N02LTG
P0903BSG
P0903BTG
P3055LSG
P3055LTG
P50N03LSG
P70N02LDG
p0603bdg
P60N03LDG
PA102FDG
P2503NPG
P45N02LDG
P0603BD
P1703BDG
P0403BDG
P3004ND5G
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Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM32407LA-S •General description ■Features ELM32407LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-18A Rds(on) < 25.8mΩ (Vgs=-10V) Rds(on) < 40.0mΩ (Vgs=-7V)
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Original
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PDF
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ELM32407LA-S
ELM32407LA-S
P2504EDG
O-252
MAR-29-2006
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