transistor P18
Abstract: No abstract text available
Text: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET
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25T60
Abstract: .25T60 RG60s
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 T16 Pin arangement see outlines t O7 S18 Features Maximum Ratings VCES
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50-06P1
25T60
25T60
.25T60
RG60s
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50-12P1
Abstract: S2485
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 Pin arangement see outlines T16 t O7 S18 Features
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50-12P1
42T120
50-12P1
S2485
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50-12P1
Abstract: No abstract text available
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18
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50-12P1
42T120
50-12P1
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions
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120D/01
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25
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40D/06
B25/50
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237td
Abstract: No abstract text available
Text: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions
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50-06P1
25T60
237td
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eco-pac
Abstract: transistor P18
Text: ECO-PACTM 2 CoolMOS Power MOSFET in ECO-PAC 2 ID25 VDSS RDSon PSHM 40/06 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 L9 P18 R18 K12 A1 E10 F10 NTC Preliminary Data Sheet
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h48 diode zener
Abstract: MR030 Zener diode H48 FW3227 BOSCH 281 005 019 A1250WV-S-03P Bosch hfm 6 C529 DIODE MR030 ver 0.6 H48 zener diode
Text: 8 7 6 5 4 3 2 1 3. Block Diagram : CLK SLG8SP512TTR P17 Reset Circuit D Thermal Sensor for DDR temp Intel Thermal Sensor P10 P10 CPU Brightness Control CORE RTC Bat VCCP P27 P56 P30 LED P31 P18 DDR2 533/667 MHz DDRII SODIMM1 B Mem_B Bus P11~P16 C Lid Switch
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SLG8SP512TTR
SiI1392CNU
RTS5158-GR
CC545
MR040T
GM965
MR030
h48 diode zener
Zener diode H48
FW3227
BOSCH 281 005 019
A1250WV-S-03P
Bosch hfm 6
C529 DIODE
MR030 ver 0.6
H48 zener diode
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions
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P181 G
Abstract: p181 IC P181 transistor P18 DTC143E DTD143EK DTD143ES p18 transistor
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isola tion to allow
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DTD143EK
DTD143ES
P181 G
p181
IC P181
transistor P18
DTC143E
DTD143EK
DTD143ES
p18 transistor
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P181 G
Abstract: P181 transistor P18 IC P181 p18 transistor p18 pnp DTC143E DTD143EK DTD143ES p181 ic
Text: Digital transistors built-in resistors • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isola tion to allow
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DTD143EK
DTD143ES
P181 G
P181
transistor P18
IC P181
p18 transistor
p18 pnp
DTC143E
DTD143EK
DTD143ES
p181 ic
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transistor p38
Abstract: transistor P39 100 p38 transistor transistor p35 P44 transistor P49 transistor transistor p61 transistor 1BW 57 TMM-118-03-G-D P29 3" tape
Text: FLAT PANEL TYPE MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY H8500, H8500B 52 mm Square, Bialkali Photocathode, 12-stage, 8 x 8 Multianode, Small Dead Space, Fast Time Response APPLICATIONS ● Small Animal Imaging ● Compact Gamma Camera ● Scinti-mammography
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H8500,
H8500B
12-stage,
SE-171-41
TPMH1282E09
transistor p38
transistor P39
100 p38 transistor
transistor p35
P44 transistor
P49 transistor
transistor p61
transistor 1BW 57
TMM-118-03-G-D
P29 3" tape
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transistor P18
Abstract: DDTA114E DDTA114WE
Text: DDTA R1¹R2 SERIES E PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1¹R2 TOP VIEW B Mechanical Data
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OT-523
OT-523,
MIL-STD-202,
-20mA
-10mA/-0
DDTA123E
DDTA143E
DDTA114E
-10mA
transistor P18
DDTA114WE
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transistor P18
Abstract: P09 transistor
Text: DDTA R1¹R2 SERIES KA PNP PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1¹R2 A D SC-59 TOP VIEW
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SC-59
SC-59,
MIL-STD-202,
-10mA/-0
DDTA123JKA
DDTA143ZKA
DDTA114YKA
-10mA
100MHz
transistor P18
P09 transistor
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DDTA114WUA
Abstract: DDTA123JUA DDTA114YUA
Text: DDTA R1¹R2 SERIES UA PNP PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1¹R2 UNDER DEVELOPMENT A SOT-323 3 C
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OT-323
OT-323,
MIL-STD-202,
-10mA/-0
DDTA123JUA
DDTA143ZUA
DDTA114YUA
-10mA
100MHz
DDTA114WUA
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DS-0427A
Abstract: b3p27 transistor C5C UNR-2.5/10-D5-C
Text: ® INNOVATION and EXCELLENCE Single Output UNR Series Non-Isolated, 12V-to-5V 5 Amp, DC/DC Converters Features • No external I/O filtering required ■ +10.4V to +13.6V input ■ +5V ±50mV , 5 Amp output ■ Synchronous-rectifier topology ■ 300kHz switching frequency
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300kHz
60mVp-p
IEC950/EN60950/UL1950
20MHz
10-pin
11-pin
DS-0427A
b3p27
transistor C5C
UNR-2.5/10-D5-C
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Untitled
Abstract: No abstract text available
Text: ® INNOVATION and EXCELLENCE Single Output UNR Series Non-Isolated, 5V-to-2.5V 2 Amp, DC/DC Converters Features • Low cost! Complete! ■ No external I/O capacitors required ■ +4.75V to +5.5V input ■ +2.5V ±1.5% , 2 Amp output ■ Low output noise, 30mVp-p
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30mVp-p
200kHz
IEC950/EN60950/UL1950
20MHz
10-pin
11-pin
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transistor C5C
Abstract: DS-0435A UNR-2.5/8-D12 C16A C16C transistor P18 b3p27
Text: ® INNOVATION and EXCELLENCE Single Output UNR Series Non-Isolated, 5V-to-2.5V 12 Amp, DC/DC Converters Features • n n n n n n n n n n n n n Low cost! +4.75V to +5.5V input +2.5V ±25mV , 12 Amp output 200kHz, synchronous-rectifier topology High efficiency, 87%
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200kHz,
40mVp-p
IEC950/EN60950/UL1950
20MHz
10-pin
11-pin
transistor C5C
DS-0435A
UNR-2.5/8-D12
C16A
C16C
transistor P18
b3p27
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transistor C5C
Abstract: C16A 5w Buck Topology DS-0427A
Text: ® INNOVATION and EXCELLENCE Single Output UNR Series Non-Isolated, 12V-to-5V 5 Amp, DC/DC Converters Features • n n n n n n n n n n n n n No external I/O filtering required +10.4V to +13.6V input +5V ±50mV , 5 Amp output Synchronous-rectifier topology
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300kHz
60mVp-p
IEC950/EN60950/UL1950
20MHz
10-pin
11-pin
transistor C5C
C16A
5w Buck Topology
DS-0427A
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Untitled
Abstract: No abstract text available
Text: ® INNOVATION and EXCELLENCE Single Output UNR Series Non-Isolated, 5V-to-2.5V 12 Amp, DC/DC Converters Features • Low cost! ■ +4.75V to +5.5V input ■ +2.5V ±25mV , 12 Amp output ■ 200kHz, synchronous-rectifier topology ■ High efficiency, 87%
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200kHz,
40mVp-p
IEC950/EN60950/UL1950
20MHz
10-pin
11-pin
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SO3572R
Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
Text: A C T IV E COM PON EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS AC TIFS POUR CIRCUITS H YBRIDES CB-166 SOT-23 Silicon NPN transistors, R F - V H F - U H F amplification Transistors NPN silicium , amplification H F - VHF - UHF M a r k in g M arq ua ge Typo
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CB-166
OT-23)
BFW30
1000m
SO3572R
transistors BFW30
BFR 450
G1 BL
BF115
BFR53R
BFR 91 A N
SO3570
BFR 50
1300 bl
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b1p18
Abstract: 12V-to-5V MA020
Text: DE2ATEL INNOVATION and EXCELLENCE Single Output UNR Series Non-lsolated, 12V-to-5V 5 Amp, DC/DC Converters Features • No external I/O filtering required ■ +10.4V to +13.6V input ■ +5V ±50mV , 5 Amp output ■ Synchronous-rectifier topology ■ 300kHz switching frequency
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300kHz
60mVp-p
IEC950/EN60950/UL1950
demand25%
UNR-5/5-D12
20MHz
10-pin
MA02048
b1p18
12V-to-5V
MA020
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ses 554
Abstract: SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R
Text: sw itching transistors transistors de commutation Types N PN THOMSON-CSF M axim u m ratings PNP Characteristics at 25 °C p totl V c E O h21E min (mW •c @ VCE(sat) @ Ic / 'B max (V) max (V) Im A ) (m A) C 22b *T m in max (M H z) (pF) B S V 52(R) 200 12
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2369IR)
ses 554
SO3572R
marking n47
BSV52R
F5BF
marking 502S
SO3570R
Marking P18
SO2221A
BSR15R
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