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    P13 TRANSISTOR Search Results

    P13 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P13 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Pressure sensor 2 PNP transistor switching outputs PK010R-P13-2UP8X-V1141 • Compact design ■ Pressure and vacuum monitoring ■ Rotatable body ■ Display rotatable by 180° ■ Excellent EMC properties ■ Pressure range 0 … 10 bar rel. Wiring diagram


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    PDF PK010R-P13-2UP8X-V1141 10bar 04psi 30VDC 2013-07-13T17 D-45472

    Untitled

    Abstract: No abstract text available
    Text: Pressure sensor 2 PNP transistor switching outputs PK01VR-P13-2UP8X-V1141 • Compact design ■ Pressure and vacuum monitoring ■ Rotatable body ■ Display rotatable by 180° ■ Excellent EMC properties ■ Pressure range -1 … 0 bar rel. Wiring diagram


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    PDF PK01VR-P13-2UP8X-V1141 30VDC 2013-07-13T17 D-45472

    w32 transistor

    Abstract: w41 transistor w33 transistor transistor p31 transistor k33 34 transistor w32 ic 4559 transistor 4559 455a transistor k33
    Text: APPLICATION NOTE 455A Group, 4559 Group Differences between 455A Group and 4559 Group 1. The Performance Overview Differences Parameter Number of basic instructions ROM type ROM size RAM size Input/Output ports D0 ~ D5 D6, D7 P00 ~ P03 P10 ~ P13 P20 ~ P23


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    PDF M3455AG8FP M3455AG8-XXXFP) M34559G6FP M34559G6-XXXFP) M3455AGCFP M3455AGC-XXXFP) REC05B0047-0200/Rev w32 transistor w41 transistor w33 transistor transistor p31 transistor k33 34 transistor w32 ic 4559 transistor 4559 455a transistor k33

    transistor p14

    Abstract: P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8
    Text: 1 2 4 3 J2 VR1 Vin J1 1 C4 0.1uF 9 Vdc Transistor Power Jack + Vin 3 Vout LM2940 5.0 C1 47uF D Vdd GND D 2 1 6 2 7 3 8 4 9 5 Resistor LED + C2 1.0 uF Pwr Note: The power jack and the battery are mechanically interlocked to assure they are used mutually exclusively.


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    PDF LM2940 19-May-2005 transistor p14 P7 transistor transistor P1 P 12 BS2-IC jack p10 p15 transistor transistor p13 P4 transistor transistor p15 transistor p8

    TRANSISTOR p50

    Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
    Text: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the


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    PDF eSHP170COB eSHP170COB eSHP170 eSHP170 AP-eSH-0005 TRANSISTOR p50 p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11

    transistor p13

    Abstract: LDTA114WLT1G marking P13 sot-23 p13 transistor
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA114WLT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


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    PDF LDTA114WLT1G OT-23 transistor p13 LDTA114WLT1G marking P13 sot-23 p13 transistor

    transistor p13

    Abstract: No abstract text available
    Text: 200mA / 30V Low VCE sat Digital transistors (with built-in resistors) DTB743ZE / DTB743ZM Dimensions (Unit : mm) Applications Inverter, Interface, Driver DTB743ZE 0.7 1.6 0.55 0.3 0.8 (2) 1.6 (3) (1) 0.2 0.2 0.1Min. Feature 1) VCE(sat) is lower than conventional products.


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    PDF 200mA DTB743ZE DTB743ZM DTB743ZE R1120A transistor p13

    marking P20 SOT23

    Abstract: marking code p13 P08 transistor P17 MARKING MARKING P04
    Text: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 = R2


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    PDF AEC-Q101 J-STD-020 DDTA123ECA DDTA143ECA DDTA114ECA DDTA124ECA DDTA144ECA DDTA115ECA DS30333 marking P20 SOT23 marking code p13 P08 transistor P17 MARKING MARKING P04

    marking code A40 SOT23-5

    Abstract: No abstract text available
    Text: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 = R2


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    PDF AEC-Q101 J-STD-020 DDTA123ECA DDTA143ECA DDTA114ECA DDTA124ECA DDTA144ECA DDTA115ECA DS30333 marking code A40 SOT23-5

    DTB743ZE

    Abstract: DTB743ZM SC-75A
    Text: DTB743ZE / DTB743ZM Transistors -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB743ZE / DTB743ZM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB743ZE 0.7 1.6 0.55 0.3 zFeature 1) VCE(sat) is lower than conventional products.


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    PDF DTB743ZE DTB743ZM -200mA DTB743ZE DTB743ZM SC-75A

    Untitled

    Abstract: No abstract text available
    Text: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data •   Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 R2  Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound


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    PDF AEC-Q101 J-STD-020 MIL-STD-202, DS30333

    Untitled

    Abstract: No abstract text available
    Text: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT


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    PDF RF2132 RF2132 800MHz 950MHz IS-95A

    800MHz CDMA Handset Circuit Diagram

    Abstract: RF2132
    Text: RF2132 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 Product Description -A- The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT


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    PDF RF2132 RF2132 800MHz 950MHz IS-95A 800MHz CDMA Handset Circuit Diagram

    PF816

    Abstract: No abstract text available
    Text: RF2132 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment • 4.8V JCDMA/TACS Handsets Product Description The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT


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    PDF RF2132 RF2132 800MHz 950MHz IS-95A PF816

    cmos 4553

    Abstract: ic 4553 4559 transistor p13 pin of ic 4553 4559Group w41 transistor 4553 transistor p31 P32 transistor
    Text: APPLICATION NOTE 4553 Group, 4559 Group Differences between 4553 Group and 4559 Group 1. The Performance Overview Differences Function Parameter Number of basic instructions ROM type ROM size RAM size Input/output ports D0 ~ D5 D6, D7 P00 ~ P03 LCD control circuit


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    PDF 4553H 4553group REC05B0046-0100/Rev cmos 4553 ic 4553 4559 transistor p13 pin of ic 4553 4559Group w41 transistor 4553 transistor p31 P32 transistor

    DTC115EKA

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors • Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thinfilm resistors with complete isolation to allow


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    PDF DTC115EKA 100MHz* DTC115EKA

    Untitled

    Abstract: No abstract text available
    Text: Digital transistors built-in resistors • Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thinfilm resistors with complete isolation to allow


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    PDF DTC115EKA 100MHz*

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2158 LC88F42A0PA/A0PAU CMOS LSI 16-bit ETR Microcontroller for Car Audio Systems http://onsemi.com ALL FLASH Overview The LC88F42A0PA/A0PAU is 16-bit microcontroller which is ideally suited as a sub controller in car audio applications for the control of “Power” “Operating mode.” They are configured around a CPU that operates at a high


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    PDF ENA2158 LC88F42A0PA/A0PAU 16-bit LC88F42A0PA/A0PAU 16-bit A2158-23/23

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2158 CMOS LSI LC88F42A0PA/A0PAU For Car Audio Systems 16-bit ETR Microcontroller ALL FLASH Overview The LC88F42A0PA/A0PAU is 16-bit microcontroller which is ideally suited as a sub controller in car audio applications for the control of “Power” “Operating mode.” They are configured around a CPU that operates at a high


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    PDF ENA2158 LC88F42A0PA/A0PAU 16-bit LC88F42A0PA/A0PAU 16-bit A2158-23/23

    HPA-R11

    Abstract: HPA-D11 HPA-R13 HPA-P11 HPA-T11 HPA-E11 Yamatake hpA HPA-T13 HPA-A11 HPA-P13
    Text: SR. No. Yamatake Corporation SPECIFICATIONS THROUGH SCAN POLARIZED RETROREFLECTIVE SCAN SET EMITTER RECEIVER H P A -T 13 H PA-E13 HPA-R13 H PA -P13 HPA-T11 HPA-E11 HPA-R11 HPA-P11 POLARIZED RETROREFLECTIVE SCAN DIFFUSE SCAN DIFFUSE SCAN SELF-DIAGNOSIS/ FOR TRANSPARENT OBJECTS


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    PDF HPA-T13 HPA-E13 HPA-R13 HPA-P13 HPA-T11 HPA-E11 HPA-R11 HPA-P11 HPA-F11 HPA-D11 HPA-R11 HPA-D11 HPA-R13 HPA-P11 HPA-T11 HPA-E11 Yamatake hpA HPA-T13 HPA-A11 HPA-P13

    p331

    Abstract: SGSP130
    Text: S G S-THOMSON 07E D | 7 ^ 2 3 7 0Dl7fl07 b | _ 73C 1 7 3 0 4 _ O j T Z J - O y _ _ ê f. V ñ K W% i I 1 • SGSP13Ò/P13Ì/P132 ;] SGSP230/P231/P232 .4 SGSP330/P331/P332 - 1 N-CHÀNNEL POWER MOS TRANSISTORS & HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate


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    PDF 0Dl7fl07 SGSP13Ã /P132 SGSP230/P231/P232 SGSP330/P331/P332 OT-82 O-220 SGSP130 SGSP230 SGSP330 p331 SGSP130

    RF2119

    Abstract: PSSOP16 F2119
    Text: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc­ tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held


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    PDF F2119 915MHz RF2119 800MHz 960MHz RF2119 PSSOP16 F2119

    M74 marking

    Abstract: MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109
    Text: Philips Semiconductors Small-signal fteld-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER TYPE NUMBER MARKING CODE


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    PDF OT143 OT343 BF510 BF511 BF512 BF513 BF545A BF545B BF545C BF556A M74 marking MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109

    sot23 marking M6p

    Abstract: PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER


    OCR Scan
    PDF OT143 OT343 BF510 BF994S BST120 BF511 BF996S BST122 BF512 BF997 sot23 marking M6p PMBFJ111 PMBFJ174