J29 P190
Abstract: p239 P116 Diode XC4028XLT XC4062XLT XC4013XLT diode P113 DIODE AJ22 AK19 diode P181
Text: XC4000XLT Family Field Programmable Gate Arrays December 10, 1997 Version 0.8 4* Advance Product Specification XC4000XLT Features XC4000XLT Electrical Features Note: This data sheet describes the XC4000XLT Family devices. This information does not necessarily apply to the
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XC4000XLT
XC4000,
XC4000A,
XC4000D,
XC4000H,
XC4000L,
XC4000E,
J29 P190
p239
P116 Diode
XC4028XLT
XC4062XLT
XC4013XLT
diode P113
DIODE AJ22
AK19 diode
P181
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diode J226
Abstract: PCIH38M400A1 j20 connector 226-0005-00100 EN61000-3-2 HPS10 hps10 transistor MC612N diode j227 positronics
Text: 1000-6000 Watts HPS10/12/15 Series Electrical Specs Input Input voltage Frequency Inrush current Efficiency Power factor Turn-on time Special Features • • • • • • • • • • • • • • • • • • • • • • • • • • Integrated OR-ing diode
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HPS10/12/15
EN61000-3-2
CISPR22,
EN55022
EN61000
J22-1
J22-2
J22-3
J22-4
J22-5
diode J226
PCIH38M400A1
j20 connector
226-0005-00100
EN61000-3-2
HPS10
hps10 transistor
MC612N
diode j227
positronics
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IEM-922
Abstract: uPD75P116 uPD75116 uPD75P116CW uPD75P116GF-3BE IC-3358
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD75P116 4-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The µPD75P116 is a version of the µPD75116 in which the on-chip mask ROM is replaced by one-time PROM which can be written to once only. Since the µPD75P116 is capable of program write by a user, it is suitable for evaluation in system development and limited production.
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PD75P116
PD75P116
PD75116
PD751×
IEM-922
P-9200G-64
PG-1500
PA-75P108CW
IEM-922
uPD75P116
uPD75116
uPD75P116CW
uPD75P116GF-3BE
IC-3358
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PCIH38M400A1
Abstract: PS3 fan connector diode J226 opamp 741 MC612N MC612N-228 MC612 elcon SERIES 1000 hps10 transistor CISPR22
Text: 1000-6000 Watts HPS10/12/15 Series Electrical Specs Input Input voltage Frequency Inrush current Efficiency Power factor Turn-on time Special Features • • • • • • • • • • • • • • • • • • • • • • • • • • Integrated OR-ing diode
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HPS10/12/15
EN61000-3-2
CISPR22,
EN55022
EN61000
J22-1
J22-2
J22-3
J22-4
J22-5
PCIH38M400A1
PS3 fan connector
diode J226
opamp 741
MC612N
MC612N-228
MC612
elcon SERIES 1000
hps10 transistor
CISPR22
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226-0005-00100
Abstract: PCIH38M400A1 810E CISPR22 HPS10 P116 Diode J20-24
Text: 1000-6000 Watts HPS10/12/15 Series Electrical Specs Input Input voltage Frequency Inrush current Efficiency Power factor Turn-on time Special Features • • • • • • • • • • • • • • • • • • • • • • • • • • Integrated OR-ing diode
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HPS10/12/15
EN61000-3-2
CISPR22,
EN55022
EN61000
J22-1
J22-2
J22-3
J22-4
J22-5
226-0005-00100
PCIH38M400A1
810E
CISPR22
HPS10
P116 Diode
J20-24
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R5F10BAG
Abstract: R5F10AGC r5f1 R5F10ABE
Text: Customer Notification RL78/F13 Family 16-bit Single-Chip Microcontroller Injected Current Specification Document No. R01TU0058ED0000 Date Published December 2013 Renesas Electronics Europe GmbH Rev 1.00 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject
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RL78/F13
16-bit
R01TU0058ED0000
P121/X1,
P122/X2/EXCLK,
P123/XT1,
P124/XT2/EXCLKS,
P137/INTP0,
P33/ANI0/AVREFP,
P34/ANI1/AVREFM,
R5F10BAG
R5F10AGC
r5f1
R5F10ABE
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NEC 3358
Abstract: IEM-922 75108CW PA-75P108CW 75P116GF nec prom PG-1500 uPD75P116 PD75P116GF-3BE uPD75P116CW
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD75P116 4-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The µPD75P116 is a version of the µPD75116 in which the on-chip mask ROM is replaced by one-time PROM which can be written to once only. Since the µPD75P116 is capable of program write by a user, it is suitable for evaluation in system development and limited production.
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PD75P116
PD75P116
PD75116
PD751×
IEM-922
NEC 3358
IEM-922
75108CW
PA-75P108CW
75P116GF
nec prom
PG-1500
uPD75P116
PD75P116GF-3BE
uPD75P116CW
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MOSFET P239
Abstract: XC4000XLA VDR P275 L20 P55 MOSFET XC4000E XC4000X XC4000XL XC4000XV XC4013XLA XC4028XLA
Text: XC4000XLA/XV Field Programmable Gate Arrays R February 1, 1999 Version 1.0 6* Product Specification XC4000XLA/XV Family FPGAs XC4000XLA/XV Electrical Features Note: XC4000XLA devices are improved versions of XC4000XL devices. The XC4000XV devices have the
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XC4000XLA/XV
XC4000XLA/XV
XC4000XLA
XC4000XL
XC4000XV
XC4000E
XC4000X
MOSFET P239
VDR P275 L20
P55 MOSFET
XC4013XLA
XC4028XLA
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75p116gf
Abstract: uPD75P116 uPD75116 uPD75P116CW uPD75P116GF-3BE
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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AB P89 zener
Abstract: Zener diode MARKING P035 252 B34 ZENER DIODE Zener diode MARKING P044 ZENER diode p317 Zener Diode p047 p014 DD 127 D TRANSISTOR zener AF4 on semiconductor marking code P008
Text: IQX Family Data Sheet FEATURES DESCRIPTION • SRAM-based, in-system programmable • Switch Matrix — Non-Blocking — Identical and predictable delays — One-to-one, one-to-many and many-to-one connections • RapidConfigure parallel interface for fast, incremental
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NEC 75116
Abstract: 75116gf uPD75112 uPD75108 uPD75112CW uPD75112GF uPD75116 uPD75116CW uPD75116GF uPD75P116
Text: µPD75112 A , 75116(A) 4-Bit Single Chip-Microcomputer Data Sheet Description The µPD75116(A) is one of the 4-bit single-chip microcomputer 75X series. The µPD75116(A) is a product with the extended ROM capacity of the µPD75108(A). In addition of high-speed
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PD75112
PD75116
PD75108
PD75116
PD75P116)
NEC 75116
75116gf
uPD75112
uPD75108
uPD75112CW
uPD75112GF
uPD75116
uPD75116CW
uPD75116GF
uPD75P116
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E78996 datasheet full bridge p135
Abstract: E78996 datasheet bridge E78996 datasheet full bridge E78996 P125 P102W E78996 E78996 E78996 P104 IRF E78996 E78996 scr E78996 p102w
Text: Bulletin I27125 09/97 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate 25A Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations
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I27125
E78996
E78996 datasheet full bridge p135
E78996 datasheet bridge
E78996 datasheet full bridge
E78996 P125
P102W E78996
E78996 P104
IRF E78996
E78996 scr
E78996 p102w
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E78996 P125
Abstract: E78996 datasheet bridge E78996 datasheet full bridge p135 P100 Series E78996 G1 G2 P102W E78996 D-19 P100 P101 P102
Text: P100 Series Vishay High Power Products Passivated Assembled Circuit Elements, 25 A FEATURES • Glass passivated junctions for greater reliability • • • • • • • PACE-PAK D-19 Electrically isolated base plate Available up to 1200 VRRM/VDRM High dynamic characteristics
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E78996
03-Jun-08
E78996 P125
E78996 datasheet bridge
E78996 datasheet full bridge p135
P100 Series
E78996 G1 G2
P102W E78996
D-19
P100
P101
P102
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IC2811
Abstract: uPD75112A uPD75108 uPD75112 uPD75112CW uPD75112GF uPD75116 uPD75116CW uPD75116GF uPD75P116
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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E78996 p102w
Abstract: E78996 P104 E78996 p105w E78996 E78996 P101 E78996 P125 E78996 P405 E78996 p135 P413W E78996 P102
Text: International S Rectifier Power Modules Passivated Assembled Circuit Elements Part Number •t s m . >fsm *0 6 (7) (8) Vrr m (V) P101 P102 P103 P104 P105 P101K P102K P103K P104K P105K P101W P102W P103W P104W P105W P101KW P102KW P103KW P104KW P105KW P111
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B40A10
840A20
B40A40
B40A60
B40A80
B40A100
B40A120
P101K
P102K
P103K
E78996 p102w
E78996 P104
E78996 p105w
E78996
E78996 P101
E78996 P125
E78996 P405
E78996 p135
P413W
E78996 P102
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diode P113
Abstract: P405W P105W diode p115 E78996 p105w E78996 p102w P102W p405 diode P111K E78996 P104
Text: International k>HRectifier Power Modules Single Phase Controlled Bridges Part Number >0 TC l RNIS *T(AV) *TSM> >FSM (7) Case Circuit RthJC DC Number Outline Number Notes (1) 60 Hz (K/W) (8) (A) (3) (4) (5) Vr r m 00 P101 P102 P103 P104 P105 P101K P102K P103K
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P101K
P102K
P103K
P104K
P105K
P111K
P112K
P113K
P114K
P115K
diode P113
P405W
P105W
diode p115
E78996 p105w
E78996 p102w
P102W
p405 diode
E78996 P104
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P124 rectifier
Abstract: P431K diode P412
Text: INTERNATIONAL RECTIFIER EbE D International US Rectifier - Passivated Assembled Circuit Elements <0 6 (7) (8) P1Q1K P102K P103K P104K P105K P111K P112K P113K P114K P115K P121K P122K P123K P124K P125K P131K P132K P133K P134K P135K P141K P142K P143K P144K
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P102K
P103K
P104K
P105K
P111K
P112K
P113K
P114K
P115K
P121K
P124 rectifier
P431K
diode P412
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Untitled
Abstract: No abstract text available
Text: NEC ¿¿PD75112 A , 75116(A) 3. Pin Functions 3.1 Port Pins F un ctio n Pin N am e In p u t/ O u tp u t Dual F un ctio n Pin POO In p u t INT4 P01 In p u t/o u tp u t SCK P02 In p u t/o u tp u t SO E P03 In p u t SI P10 In p u t INTO In p u t ® In p u t
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uPD75112
uPD75116
P00/INT4,
uPD75P116
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PJ87
Abstract: diode pj87 diode p115 P116 Diode P119H DIODE AH10 DIODE AJ15 J29 P190 P128J
Text: £ XILINX XC4000XLT Family Field Programmable Gate Arrays December 10, 1997 Version 0.8 Advance Product Specification XC4000XLT Features XC4000XLT Electrical Features Note: This data sheet describes the XC4000XLT Family devices. This information does not necessarily apply to the
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OCR Scan
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PDF
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XC4000XLT
XC4000,
XC4000A,
XC4000D,
XC4000H,
XC4000L,
XC4000E,
XC4000EX,
PJ87
diode pj87
diode p115
P116 Diode
P119H
DIODE AH10
DIODE AJ15
J29 P190
P128J
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OP123
Abstract: OP302 OP305 EE-100 25C161
Text: OPTEK TEC HNOLOGY INC OL.E D | t ^ a s a o o o a a m a I ? 7 ~ ~ O p to e le c tro n ic s * D iv is io n T R W Electronic Com ponents Group T R w V ftoduct Bulletin 5091 January 1985 NPIY Silicon Photodarlingtons Types QP30Û, QP301, OP3Û2, OP3Q3, 0P3Û4, 0P305
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D0G0140
QP300,
0P301,
OP302,
0P303,
boards11
OP305
OP123
OP302
EE-100
25C161
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Untitled
Abstract: No abstract text available
Text: Bulletin 127125 09/97 International IOR Rectifier P100 SERIES PASSIVATED ASSEM BLED CIRCUIT ELEMENTS Features • G las s passivated Junctions for greater reliability ■ E lectrically isolated base plate ■ A vailable up to 1 200 V HHM, V DRM ■ H igh dynam ic characteristics
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E78996 full bridge p135
Abstract: E78996 p102w p102w E78996 P104 E78996 P101 E78996 rectifier module P102W E78996 E78996 full bridge p125 bridge RECTIFIER GI E78996 scr
Text: International llO R ]Rectifier SERIES P100 PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features 25A • Glass passivated junctions for greater reliability ■ Electrically isolated base plate ■ Available up to 1200 V RflM, V DflM ■ ■ ■ ■ High dynamic characteristics
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E78996
E78996 full bridge p135
E78996 p102w
p102w
E78996 P104
E78996 P101
E78996 rectifier module
P102W E78996
E78996 full bridge p125
bridge RECTIFIER GI
E78996 scr
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LT 637
Abstract: E78996 P101 IR E78996 p125 P104 E78996 132P103 E78996 P104 E78996 P102
Text: Bulletin 127125 09/97 International IQ R Rectifier P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features • G lass passivated ju n ctio n s to r greater relia bility ■ E le ctrica lly isolated base plate 25A ■ A va ila b le up to 1200 V RRM, V DRM
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PDF
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E78996
LT 637
E78996 P101
IR E78996 p125
P104 E78996
132P103
E78996 P104
E78996 P102
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IR p123
Abstract: T100K KL23008 P405W p105w T140K IR P124 25016D P102W L170-16
Text: 1 I n t e r n a t io n a l R e c t if ie r Phase Control SCR Part Number 20 Doubler Circuit Doubler Circuit Positive Control Negative Control VRRM Vdrm (V) lT(AV)«Tc •RAVI CQ (A) IT5M,IfSM(2) SOHz 50 Hz (A) (15) RthJCDC (K/W) nom- Fax-onDemand Number
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T100K
T120K
T140K
T160K
IR p123
KL23008
P405W
p105w
IR P124
25016D
P102W
L170-16
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