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    P0903BDG TRANSISTOR Search Results

    P0903BDG TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    P0903BDG TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    P0903BDG

    Abstract: p0903bd Niko Semiconductor p0903bdg transistor p0903bdg niko-sem p0903bdg P0903BDG transistor SEP-24-2004 P0903b P0903 P09*3bdg
    Text: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P0903BDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		P0903BDG O-252 Temperature2004 SEP-24-2004 P0903BDG p0903bd Niko Semiconductor p0903bdg transistor p0903bdg niko-sem p0903bdg P0903BDG transistor SEP-24-2004 P0903b P0903 P09*3bdg PDF

    P0903BDG

    Abstract: p0903bd p0903 ELM32424LA-S
    Text: Single N-channel MOSFET ELM32424LA-S •General description ■Features ELM32424LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=50A Rds(on) < 9.5mΩ (Vgs=10V) Rds(on) < 16mΩ (Vgs=4.5V)


    Original     		ELM32424LA-S ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG p0903bd p0903 PDF

    P0903BDG

    Abstract: ELM32424LA-S
    Text: Single N-channel MOSFET ELM32424LA-S •General description ■Features ELM32424LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=50A Rds(on) < 9.5mΩ (Vgs=10V) Rds(on) < 16mΩ (Vgs=4.5V)


    Original     		ELM32424LA-S ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG PDF

    ELM32424LA

    Abstract: ELM32424LA-S
    Text: 单 N 沟道 MOSFET ELM32424LA-S •概要 ■特点 ELM32424LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=50A ·Rds on < 9.5mΩ (Vgs=10V) ·Rds(on) < 16mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		ELM32424LA-S P0903BDG O-252 SEP-24-2004 ELM32424LA ELM32424LA-S PDF

    P0903BDG

    Abstract: ELM32424LA-S p0903bd p0903b
    Text: シングル N チャンネル MOSFET ELM32424LA-S •概要 ■特長 ELM32424LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=50A ・ Rds on < 9.5mΩ (Vgs=10V) ・ Rds(on) < 16mΩ (Vgs=4.5V)


    Original     		ELM32424LA-S P0903BDG O-252 SEP-24-2004 P0903BDG ELM32424LA-S p0903bd p0903b PDF