P008B DIODE
Abstract: STN4NF03L
Text: STN4NF03L N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET II POWER MOSFET TYPE VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A • ■ TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 2 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,
|
Original
|
PDF
|
STN4NF03L
OT-223
P008B DIODE
STN4NF03L
|
P008B DIODE
Abstract: STN5PF20V 39 MARKING SOT223
Text: STN5PF20V P-CHANNEL 20V - 0.065Ω - 5A SOT-223 2.5V-DRIVE STripFET II POWER MOSFET TYPE STN5PF20V • ■ ■ ■ VDSS RDS on ID 20 V < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) 5A 2 TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
|
Original
|
PDF
|
STN5PF20V
OT-223
P008B DIODE
STN5PF20V
39 MARKING SOT223
|
STN2NF10
Abstract: No abstract text available
Text: STN2NF10 N-CHANNEL 100V - 0.23Ω - 2A SOT-223 STripFET II POWER MOSFET TYPE STN2NF10 • VDSS RDS on ID 100 V < 0.26 Ω 2A TYPICAL RDS(on) = 0.23 Ω 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"
|
Original
|
PDF
|
STN2NF10
OT-223
STN2NF10
|
P008B DIODE
Abstract: STN3PF06
Text: STN3PF06 P-CHANNEL 60V - 0.18Ω - 3A SOT-223 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STN3PF06 • ■ ■ ■ ■ VDSS RDS on ID 60V <0.20Ω 2.5A 2 TYPICAL RDS(on) = 0.18Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
PDF
|
STN3PF06
OT-223
P008B DIODE
STN3PF06
|
P008B DIODE
Abstract: STN3NF06L
Text: STN3NF06L N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
|
Original
|
PDF
|
STN3NF06L
OT-223
P008B DIODE
STN3NF06L
|
P008B DIODE
Abstract: STN1HNC60
Text: STN1HNC60 N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh II MOSFET TYPE STN1HNC60 • ■ ■ ■ ■ VDSS RDS on ID 600 V <8Ω 0.4 A TYPICAL RDS(on) = 7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
|
Original
|
PDF
|
STN1HNC60
OT-223
P008B DIODE
STN1HNC60
|
P008B DIODE
Abstract: STN4NF03L
Text: STN4NF03L N-CHANNEL 30V - 0.039Ω - 4A SOT-223 STripFET POWER MOSFET TYPE STN4NF03L • ■ VDSS RDS on ID 30V <0.05Ω 4A 2 TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,
|
Original
|
PDF
|
STN4NF03L
OT-223
P008B DIODE
STN4NF03L
|
STN2NF10
Abstract: No abstract text available
Text: STN2NF10 N-CHANNEL 100V - 0.23Ω - 2A SOT-223 STripFET II POWER MOSFET TYPE STN2NF10 • VDSS RDS on ID 100 V < 0.26 Ω 2A TYPICAL RDS(on) = 0.23 Ω 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"
|
Original
|
PDF
|
STN2NF10
OT-223
STN2NF10
|
STN3NF06
Abstract: No abstract text available
Text: STN3NF06 N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY 2 DESCRIPTION
|
Original
|
PDF
|
STN3NF06
OT-223
STN3NF06
|
STN1NF10
Abstract: No abstract text available
Text: STN1NF10 N-CHANNEL 100V - 0.7Ω - 1A SOT-223 STripFET II POWER MOSFET TYPE STN1NF10 • ■ VDSS RDS on ID 100 V < 0.8 Ω 1A TYPICAL RDS(on) = 0.7 Ω EXCEPTIONAL dv/dt CAPABILITY 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique ”Single Feature Size ”
|
Original
|
PDF
|
STN1NF10
OT-223
STN1NF10
|
Untitled
Abstract: No abstract text available
Text: STN3NF06 N-CHANNEL 60V - 0.07Ω - 3A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of
|
Original
|
PDF
|
STN3NF06
OT-223
|
P008B DIODE
Abstract: STN2NF06L
Text: STN2NF06L N-CHANNEL 60V - 0.1 Ω - 2A SOT-223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN2NF06L 60 V <0.12 Ω 2A TYPICAL RDS(on) = 0.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE
|
Original
|
PDF
|
STN2NF06L
OT-223
P008B DIODE
STN2NF06L
|
STN3NF06
Abstract: No abstract text available
Text: STN3NF06 N-CHANNEL 60V - 0.07Ω - 3A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of
|
Original
|
PDF
|
STN3NF06
OT-223
STN3NF06
|
Untitled
Abstract: No abstract text available
Text: STN3NF06 N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY 2 DESCRIPTION
|
Original
|
PDF
|
STN3NF06
OT-223
|
|
|
P008B DIODE
Abstract: STN1N20
Text: STN1N20 N - CHANNEL 200V - 1.2 Ω - 1A - SOT-223 POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STN1N20 • ■ ■ ■ ■ ■ V DSS R DS on I D CONT 200 V < 1.5 Ω 1A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED
|
Original
|
PDF
|
STN1N20
OT-223
OT-223
P008B DIODE
STN1N20
|
STN4NE03
Abstract: No abstract text available
Text: STN4NE03 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
PDF
|
STN4NE03
OT-22f
STN4NE03
|
P008B DIODE
Abstract: STN1NB80
Text: STN1NB80 N - CHANNEL 800V - 16Ω - 0.2A - SOT-223 PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
|
Original
|
PDF
|
STN1NB80
OT-223
P008B DIODE
STN1NB80
|
P008B DIODE
Abstract: STN2N06
Text: STN2N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE STN2N06 • ■ ■ ■ ■ ■ V DSS R DS on I D CONT 60 V < 0.250 Ω 2A TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED AVAILABLE IN TAPE AND REEL ON
|
Original
|
PDF
|
STN2N06
OT-223
OT-223
P008B DIODE
STN2N06
|
STN2N06
Abstract: No abstract text available
Text: STN2N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE ST N2N06 • ■ ■ ■ ■ ■ V DSS R DS on I D CONT 60 V < 0.250 Ω 2 A TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED AVAILABLE IN TAPE AND REEL ON
|
Original
|
PDF
|
STN2N06
N2N06
OT-223
OT-223
STN2N06
|
STN3PF06
Abstract: No abstract text available
Text: STN3PF06 P-CHANNEL 60V - 0.18Ω - 3A SOT-223 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STN3PF06 • ■ ■ ■ ■ VDSS RDS on ID 60V <0.20Ω 2.5A 2 TYPICAL RDS(on) = 0.18Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
Original
|
PDF
|
STN3PF06
OT-223
STN3PF06
|
P008B DIODE
Abstract: STN7NF10
Text: STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET II POWER MOSFET TYPE STN7NF10 • ■ VDSS RDS on ID 100 V < 0.065 Ω 5A TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 2 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
|
Original
|
PDF
|
STN7NF10
OT-223
P008B DIODE
STN7NF10
|
P008B DIODE
Abstract: P008B BDW91 BDW92 npn darlington TO-39
Text: ZÜ SCS-THOM SON BDW91 Liera «! BDW92 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDW91 is a silicon epitaxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-39 metal case, intented for
|
OCR Scan
|
PDF
|
BDW91
BDW92
BDW91
BDW92.
BDW91/BDW92
P008B
7TETE37
P008B DIODE
P008B
BDW92
npn darlington TO-39
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON HDeæHLISTrisîQÜDlgS STN2N06 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR ADVANCE DATA TYPE STN2N06 V d ss R DS on I dcont 60 V < 0.250 £2 2 A . TYPICAL RDS(on) =0.21 Q . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW
|
OCR Scan
|
PDF
|
STN2N06
OT-223
OT-223
T2N06
OT223
P008B
|
BDW91
Abstract: No abstract text available
Text: *7# S G S -T H O M S O N [MOeiMillLieraeiDIgS BDW 91 BDW 92 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDW91 is a silicon epitaxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-39 metal case, intented for
|
OCR Scan
|
PDF
|
BDW91
BDW92.
BDW92
|
