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    P-CHANNEL TO Search Results

    P-CHANNEL TO Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL TO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPC8403

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools Unit: mm • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.)


    Original     		PDF TPC8403 TPC8403

    TPC8403

    Abstract: 5106a
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools Unit: mm • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.)


    Original     		PDF TPC8403 TPC8403 5106a

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one


    Original     		PDF SSM6E03TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one


    Original     		PDF SSM6E03TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU

    TPCP8401

    Abstract: No abstract text available
    Text: TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSⅣ / N Channel U-MOSⅢ TPCP8401 2.9±0.1 0.3 +0.1／−0.05 0.025 M 8 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating P Channel N Channel 0.24＋0.10 −0.09


    Original     		PDF TPCP8401 TPCP8401

    SSM6E01TU

    Abstract: HIGH POWER MOSFET TOSHIBA
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU SSM6E01TU HIGH POWER MOSFET TOSHIBA

    CMLDM7005

    Abstract: Power MOSFET p-Channel n-channel dual CMLDM8005 TR
    Text: Product Brief CMLDM7005 Dual, N-Channel CMLDM8005 (Dual, P-Channel) CMLDM7585 (N & P-Channel) SOT-563 20V, 650mA Dual, Complementary MOSFETs in the miniature SOT-563 package N-Channel P-Channel N & P-Channel Typical Electrical Characteristics Central Semiconductor’s CMLDM7005 (Dual, N-Channel),


    Original     		PDF CMLDM7005 CMLDM8005 CMLDM7585 650mA OT-563 OT-563 CMLDM7005 Power MOSFET p-Channel n-channel dual CMLDM8005 TR

    KTA 3-25

    Abstract: SSM6E01TU SSM6E
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU KTA 3-25 SSM6E01TU SSM6E

    Untitled

    Abstract: No abstract text available
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E01TU

    TPC8404

    Abstract: No abstract text available
    Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)


    Original     		PDF TPC8404 -250V) TPC8404

    TPC8404

    Abstract: No abstract text available
    Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)


    Original     		PDF TPC8404 -100A -250V) TPC8404

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • 1.8 V drive P-channel MOSFET and 1.5 V drive N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low


    Original     		PDF SSM6E03TU

    PMBFJ174

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel


    Original     		PDF PMBFJ174 MAM386 R77/02/8

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools • Unit: mm Low drain-source ON resistance: • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.)


    Original     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.)


    Original     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools • • Industrial Applications Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    tpc8403

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403 tpc8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Low drain-source ON resistance: • P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998


    Original     		PDF RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    TPC8405

    Abstract: No abstract text available
    Text: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)


    Original     		PDF TPC8405 TPC8405