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    P-CHANNEL POWER MOSFET WITH LOW ON-STATE RESISTANCE Search Results

    P-CHANNEL POWER MOSFET WITH LOW ON-STATE RESISTANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL POWER MOSFET WITH LOW ON-STATE RESISTANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1545SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching


    Original     		PDF XP132A1545SR XP132A1545SR

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.11Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching


    Original     		PDF XP132A11A1SR XP132A11A1SR

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.075Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching


    Original     		PDF XP132A1275SR XP132A1275SR

    ultra low idss

    Abstract: ultra low igss XP132A11A1SR
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.11Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching


    Original     		PDF XP132A11A1SR XP132A11A1SR ultra low idss ultra low igss

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1545SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching


    Original     		PDF XP132A1545SR XP132A1545SR

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.075Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching


    Original     		PDF XP132A1275SR XP132A1275SR

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low


    Original     		PDF UTT4425 UTT4425 UTT4425L-S08-R QW-R502-562

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low


    Original     		PDF UTT4407 UTT4407 UTT4407L-S08-R UTT4407G-S08-R UTT4407L-S08-T UTT4407G-S08-T QW-R502-554

    ESD 141

    Abstract: ON10M
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low


    Original     		PDF UTT4425 UTT4425 UTT4425L-S08-R UTT4425G-S08-R QW-R502-562 ESD 141 ON10M

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3443 Power MOSFET P-CHANNEL 2.5-V G-S MOSFET  DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate


    Original     		PDF UT3443 UT3443 UT3443G-AG6-R OT-26 QW-R502-557

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30NP30 Power MOSFET DUAL POWER MOSFET N-CHANNEL/P-CHANNEL  DESCRIPTION The UTC UTT30NP30 is a dual power MOSFET. it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low capacitance and low gate charge, etc.


    Original     		PDF UTT30NP30 UTT30NP30 O-252-4 QW-R502-A40

    UT3443

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3443 Preliminary Power MOSFET P-CHANNEL 2.5-V G-S MOSFET „ DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate


    Original     		PDF UT3443 UT3443 OT-26 UT3443L-AG6-R UT3443G-AG6-R QW-R502-557

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N70-P Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION 1 The UTC 6N70-P is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate


    Original     		PDF 6N70-P 6N70-P O-251 O-220F2 O-220F O-252 6N70L-TF2-T 6N70G-TF2-T 6N70L-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.075Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆2 FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP134A1275SR is a P-channel Power MOSFET with low


    Original     		PDF XP134A1275SR XP134A1275SR

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.28Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A11C0PR is a P-channel Power MOSFET with low


    Original     		PDF OT-89 XP162A11C0PR OT-89 XP162A11C0PR XP161A11A1PR

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.45Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-23 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP152A11E5MR is a P-channel Power MOSFET with low


    Original     		PDF OT-23 XP152A11E5MR OT-23 XP152A11E5MR

    XP134A1275SR

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.075Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆2 FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP134A1275SR is a P-channel Power MOSFET with low


    Original     		PDF XP134A1275SR XP134A1275SR

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A12A6PR is a P-channel Power MOSFET with low


    Original     		PDF OT-89 XP162A12A6PR OT-89 XP162A12A6PR XP161A11A1PR

    XP152A11E5MR

    Abstract: MOSFET P-Channel sot-23
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.45Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-23 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP152A11E5MR is a P-channel Power MOSFET with low


    Original     		PDF OT-23 XP152A11E5MR OT-23 XP152A11E5MR MOSFET P-Channel sot-23

    p-channel mosfet sot89 5V

    Abstract: XP161A11A1PR XP162A11C0PR MOSFET SOT-89 package p-channel mosfet with diode sot89
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.28Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A11C0PR is a P-channel Power MOSFET with low


    Original     		PDF OT-89 XP162A11C0PR OT-89 XP162A11C0PR XP161A11A1PR p-channel mosfet sot89 5V XP161A11A1PR MOSFET SOT-89 package p-channel mosfet with diode sot89

    251S2

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N70-P Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220F  DESCRIPTION The UTC 6N70-P is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate


    Original     		PDF 6N70-P O-220F 6N70-P O-251 O-251L O-251S O-251S2 O-220F2 O-251S4 251S2

    XP152A12C0MR

    Abstract: MOSFET P-Channel sot-23 Ultra Low voltage rds mosfet ultra low idss
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.3Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-23 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP152A12C0MR is a P-channel Power MOSFET with low


    Original     		PDF OT-23 XP152A12C0MR OT-23 XP152A12C0MR MOSFET P-Channel sot-23 Ultra Low voltage rds mosfet ultra low idss

    p-channel mosfet sot89 5V

    Abstract: XP162A12A6PR XP161A11A1PR MOSFET SOT-89 package Ultra Low voltage rds mosfet p-channel mosfet with diode sot89
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A12A6PR is a P-channel Power MOSFET with low


    Original     		PDF OT-89 XP162A12A6PR OT-89 possible25 XP162A12A6PR XP161A11A1PR p-channel mosfet sot89 5V XP161A11A1PR MOSFET SOT-89 package Ultra Low voltage rds mosfet p-channel mosfet with diode sot89

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.11Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP134A11A1SR is a P-channel Power MOSFET with low


    Original     		PDF XP134A11A1SR XP134A11A1SR