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    P-CHANNEL MOSFET SOT89 Search Results

    P-CHANNEL MOSFET SOT89 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOSFET SOT89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CXDM4060P

    Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
    Text: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET


    Original     		PDF CXDM4060P OT-89 CXDM4060P OT-89 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet

    MARKING TR SOT23-6 P MOSFET

    Abstract: marking p52 SOT23-6 marking ma sot23-6 marking QG SOT23-6 marking p52 mosfet MARKING NB SOT23-6 4422 mosfet ZVN4525E6 ZVP4525E6 ZVP4525TA
    Text: ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525E6 OT23-6 OT223 ZVN4525E6 OT23-6 MARKING TR SOT23-6 P MOSFET marking p52 SOT23-6 marking ma sot23-6 marking QG SOT23-6 marking p52 mosfet MARKING NB SOT23-6 4422 mosfet ZVN4525E6 ZVP4525E6 ZVP4525TA

    marking p52 mosfet

    Abstract: p52 sot89 p-channel 250V power mosfet c 103 mosfet MARKING TR SOT23-6 P MOSFET ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC DSA0037423
    Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525Z OT223 OT23-6 ZVN4525Z marking p52 mosfet p52 sot89 p-channel 250V power mosfet c 103 mosfet MARKING TR SOT23-6 P MOSFET ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC DSA0037423

    ut06p03

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION 1 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT06P03 UT06P03 OT-89 UT06P03G-AB3-R QW-R502-156

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ 1 DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT9435 UT9435 OT-89 UT9435L UT9435-AB3-R UT9435L-AB3-R QW-R502-155

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.


    Original     		PDF UT9435 UT9435 UT9435G-AB3-R UT9435L-TN3-R UT9435G-TN3-R UT9435G-S08-R OT-89 O-252 QW-R502-155

    UT06P03

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION 1 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT06P03 UT06P03 OT-89 UT06P03L UT06P03-AB3-R UT06P03L-AB3-R QW-R502-156

    UT9435

    Abstract: ut9435g DSA0037680
    Text: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.


    Original     		PDF UT9435 UT9435 UT9435L UT9435G UT9435-AB3-R UT9435-TN3-R UT9435-S08-R UT9435L-AB3-R UT9435L-TN3-R UT9435L-S08-R ut9435g DSA0037680

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE  TO-252 SOT-89 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT06P03 O-252 OT-89 UT06P03 OT-26 UT06P03G-AB3-R UT06P03G-AG6-R UT06P03L-TN3-R UT06P03G-TN3-R

    mosfet marking l

    Abstract: 48m marking
    Text: CXDM4060P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high


    Original     		PDF CXDM4060P OT-89 28-March mosfet marking l 48m marking

    Untitled

    Abstract: No abstract text available
    Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525Z -250V; -205mA OT223 OT23-6 ZVN4525Z D-81673

    p52 sot89

    Abstract: marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V
    Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525Z -250V; -205mA OT223 OT23-6 ZVN4525Z D-81673 p52 sot89 marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V

    MARKING TR SOT23-6 P MOSFET

    Abstract: ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC
    Text: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525G -250V; -265mA OT23-6 OT223 ZVN4525G OT223 hoo26100 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC

    4422 mosfet

    Abstract: p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419
    Text: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525G OT223 OT23-6 ZVN4525G OT223 4422 mosfet p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419

    p-channel mosfet sot89 5V

    Abstract: XP161A11A1PR XP162A11C0PR MOSFET SOT-89 package p-channel mosfet with diode sot89
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.28Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A11C0PR is a P-channel Power MOSFET with low


    Original     		PDF OT-89 XP162A11C0PR OT-89 XP162A11C0PR XP161A11A1PR p-channel mosfet sot89 5V XP161A11A1PR MOSFET SOT-89 package p-channel mosfet with diode sot89

    Untitled

    Abstract: No abstract text available
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A12A6PR is a P-channel Power MOSFET with low


    Original     		PDF OT-89 XP162A12A6PR OT-89 XP162A12A6PR XP161A11A1PR

    p-channel mosfet sot89 5V

    Abstract: XP162A12A6PR XP161A11A1PR MOSFET SOT-89 package Ultra Low voltage rds mosfet p-channel mosfet with diode sot89
    Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A12A6PR is a P-channel Power MOSFET with low


    Original     		PDF OT-89 XP162A12A6PR OT-89 possible25 XP162A12A6PR XP161A11A1PR p-channel mosfet sot89 5V XP161A11A1PR MOSFET SOT-89 package Ultra Low voltage rds mosfet p-channel mosfet with diode sot89

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT06P03 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ 1 DESCRI PT I ON The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT06P03 UT06P03 OT-89 UT06P03G-AB3-R QW-R502-156

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT9435 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.


    Original     		PDF UT9435 UT9435 UT9435L UT9435G UT9435-AB3-R UT9435-TN3-R UT9435-S08-R UT9435L-AB3-R UT9435L-TN3-R UT9435L-S08-R

    Untitled

    Abstract: No abstract text available
    Text: XP202A0003PR-G P-channel 4V G-S MOSFET PARMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) ( 1) Drain Current(Pulse) * ( 2) Channel Power Dissipation * Channel Temperature SYMBOL RATINGS UNITS VDSS VGSS ID IDP Pd Tch -30 ±20 -5 -20 1.5


    Original     		PDF XP202A0003PR-G OT-89 000/Reel

    XP162A11C0PR

    Abstract: No abstract text available
    Text: XP162A11C0PR ETR1125_001 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP162A11C0PR ETR1125 XP162A11C0PR OT-89

    XP162A12A6PR

    Abstract: p-channel mosfet sot89 5V
    Text: XP162A12A6PR ETR1126_001 Power MOSFET •GENERAL DESCRIPTION The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP162A12A6PR ETR1126 XP162A12A6PR OT-89 p-channel mosfet sot89 5V

    Untitled

    Abstract: No abstract text available
    Text: XP162A12A6PR-G ETR1126_003 Power MOSFET GENERAL DESCRIPTION The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP162A12A6PR-G ETR1126 XP162A12A6PR-G OT-89

    XP162A11C0PR

    Abstract: p-channel mosfet sot89 5V
    Text: XP162A11C0PR-G ETR1125_003 Power MOSFET •GENERAL DESCRIPTION The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.


    Original     		PDF XP162A11C0PR-G ETR1125 XP162A11C0PR-G OT-89 OT-89. XP162A11C0PR p-channel mosfet sot89 5V