IRF95
Abstract: IRF9510 p channel mosfet 100v TA17541
Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
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IRF95
O220AB
IRF9510
IRF95
IRF9510
p channel mosfet 100v
TA17541
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CXDM4060P
Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
Text: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET
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CXDM4060P
OT-89
CXDM4060P
OT-89
21x9x9
27x9x17
23x23x13
23x23x23
53x23x23
PB CXDM4060P
MOSFET SMD MARKING CODE
MOSFET marking smd
SOT89 smd marking 13
sot-89 Marking LB
pb sot89 mosfet
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CMLM8205
Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
Text: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET
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CMLM8205
280mA,
500mA
OT-563
CMLM8205
OT-563
100mA
21x9x9
27x9x17
20x18x5
PB CMLM8205
mosfet 4812
marking 34 diode SCHOTTKY
sot-563 MOSFET D1
P-Channel Enhancement MOSFET module
4812 mosfet
"Schottky Diode"
Schottky Diode
power mosfet 500 A
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3N163
Abstract: TO72 package
Text: 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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3N163
3N163
375mW
TO72 package
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Untitled
Abstract: No abstract text available
Text: LS3N163 P-CHANNEL MOSFET The LS3N163 is an enhancement mode P-Channel Mosfet The LS3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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LS3N163
LS3N163
375mW
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UTT20P04
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT20P04 Power MOSFET -40V, -20A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT20P04 is a P-channel Power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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UTT20P04
UTT20P04
UTT20P04L-TN3-R
UTT20P04G-TN3-R
O-252
QW-R502-774
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P04 Power MOSFET -40V, -60A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT50P04
UTT50P04
O-252
UTT50P04L-TN3-R
UTT50P04G-TN3-R
QW-R502-598
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT40P04 Power MOSFET 40V, 50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT40P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
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UTT40P04
UTT40P04
UTT40P04L-TA3-T
UTT40P04G-TA3-T
QW-R502-616
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT65P04 Power MOSFET 65A, 40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT65P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high
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UTT65P04
UTT65P04
UTT65P04L-TA3-T
UTT65P04G-TA3-T
O-220
QW-R502-615
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Untitled
Abstract: No abstract text available
Text: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDS4675
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FDD4141
Abstract: No abstract text available
Text: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDD4141
-PA52
FDD4141
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SI4563DY
Abstract: No abstract text available
Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested
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Si4563DY
Si4563DY-T1--E3
08-Apr-05
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FDD4141
Abstract: Fairchild FDD4141
Text: FDD4141 tm P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDD4141
-PA52
FDD4141
Fairchild FDD4141
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Untitled
Abstract: No abstract text available
Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDD4141
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FDS4141
Abstract: No abstract text available
Text: FDS4141 P-Channel PowerTrench MOSFET -40V, -10.8A, 13.0mΩ Features General Description Max rDS on = 13.0mΩ at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDS4141
FDS4141
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F011
Abstract: F63TNR F852 FDS4675 L86Z
Text: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDS4675
F011
F63TNR
F852
FDS4675
L86Z
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Untitled
Abstract: No abstract text available
Text: FDS4141 P-Channel PowerTrench MOSFET -40V, -10.8A, 13.0mΩ Features General Description ̈ Max rDS on = 13.0mΩ at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDS4141
FDS4141
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Untitled
Abstract: No abstract text available
Text: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDS4675
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Untitled
Abstract: No abstract text available
Text: FDD4141_F085 P-Channel PowerTrench MOSFET -40V, -50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDD4141
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list of P channel power mosfet
Abstract: si4563 SI4563DY
Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested
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Si4563DY
Si4563DY-T1--E3
52243--Rev.
24-Oct-05
list of P channel power mosfet
si4563
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FDS4675
Abstract: No abstract text available
Text: FDS4675 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDS4675
FDS4675
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FDD4685
Abstract: 100A inverter mosfet
Text: FDD4685 40V P-Channel PowerTrench MOSFET –40V, –32A, 27mΩ Features tm General Description Max rDS on = 27mΩ at VGS = –10V, ID = –8.4A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to
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FDD4685
FDD4685
100A inverter mosfet
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Untitled
Abstract: No abstract text available
Text: FQD5P20 / FQU5P20 P-Channel QFET MOSFET -200 V, -3.7 A, 1.4 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQD5P20
FQU5P20
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FQT5P10
Abstract: No abstract text available
Text: FQT5P10 P-Channel QFET MOSFET -100 V, -1.0 A, 1.05 Ω Features Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQT5P10
FQT5P10
OT-223
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