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Abstract: No abstract text available
Text: FQB1P50 P-Channel QFET MOSFET -500 V, -1.5 A, 10.5 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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P-Channel mosfet 400v to220
Abstract: FQP3P50 P-Channel mosfet 400v 10 A to220
Text: FQP3P50 P-Channel QFET MOSFET -500 V, -2.7 A, 4.9 Ω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQP3P50
FQP3P50
O-220
P-Channel mosfet 400v to220
P-Channel mosfet 400v 10 A to220
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Untitled
Abstract: No abstract text available
Text: FQD3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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Untitled
Abstract: No abstract text available
Text: FQP3P50 P-Channel QFET MOSFET -500 V, -2.7 A, 4.9 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQP3P50
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Untitled
Abstract: No abstract text available
Text: FQB1P50 / FQI1P50 P-Channel QFET MOSFET - 500 V, - 1.5 A, 10.5 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQB1P50
FQI1P50
FQI1P50
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N50-P Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50-P is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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5N50-P
5N50-P
QW-R205-027
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circuit diagram of mosfet based smps power supply
Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
Text: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The
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new/fdc6901l
FDC6901L
FDJ129P
Power247TM,
circuit diagram of mosfet based smps power supply
FSD210 8-pin
6 PIN smps control ic FOR LED DRIVER
SMPS MOSFET
3 phase smps circuit diagram using mosfet
FQP2N60C
1000V P-channel MOSFET
equivalent fsd210
FQPF1N60C
600V 2A MOSFET N-channel
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FQPF2P40
Abstract: No abstract text available
Text: QFET TM FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
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p-channel 200V
Abstract: FQP2P40
Text: QFET TM FQP2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
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p-channel 200V
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FQP2P40
Abstract: No abstract text available
Text: QFET TM FQP2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
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FQP2P40
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Untitled
Abstract: No abstract text available
Text: FQD3P50 / FQU3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQD3P50
FQU3P50
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Text: QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
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FQD2P40
FQU2P40
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FQU2P40
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Untitled
Abstract: No abstract text available
Text: QFET TM FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
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FQB2P40
FQI2P40
-400V,
FQI2P40TU
O-262
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FQD2P40
Abstract: No abstract text available
Text: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
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FQD2P40
FQU2P40
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FQU2P40TU
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FQD2P40
Abstract: FQU2P40
Text: QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
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Untitled
Abstract: No abstract text available
Text: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
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FQD2P40
FQU2P40
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FQD2P40TF
O-252
FQD2P40TM
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FQD2P40
Abstract: FQU2P40
Text: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
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FQU2P40
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P-Channel mosfet 400v to220
Abstract: No abstract text available
Text: FQP2P40 June 2000 QFET TM FQP2P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP2P40
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P-Channel mosfet 400v to220
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Untitled
Abstract: No abstract text available
Text: FQP4P40 August 2000 QFET FQP4P40 TM 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP4P40
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FQG4904
Abstract: 40v N- and P-Channel dip
Text: TM FQG4904 400V Dual N & P-Channel MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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400v p-channel mosfet
Abstract: FQP4P40 P-Channel mosfet 400v to220
Text: FQP4P40 August 2000 QFET TM FQP4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP4P40
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400v p-channel mosfet
FQP4P40
P-Channel mosfet 400v to220
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FQPF4P40
Abstract: No abstract text available
Text: FQPF4P40 August 2000 QFET TM FQPF4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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40v N- and P-Channel dip-8
Abstract: No abstract text available
Text: TM FQG4904 400V Dual N & P-Channel MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQG4904TU
40v N- and P-Channel dip-8
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Untitled
Abstract: No abstract text available
Text: FQPF2P40 June 2000 QFET TM FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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