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    P-CHANNEL MOSFET 400V Search Results

    P-CHANNEL MOSFET 400V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOSFET 400V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB1P50 P-Channel QFET MOSFET -500 V, -1.5 A, 10.5 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


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    FQB1P50 PDF

    P-Channel mosfet 400v to220

    Abstract: FQP3P50 P-Channel mosfet 400v 10 A to220
    Text: FQP3P50 P-Channel QFET MOSFET -500 V, -2.7 A, 4.9 Ω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


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    FQP3P50 FQP3P50 O-220 P-Channel mosfet 400v to220 P-Channel mosfet 400v 10 A to220 PDF

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    Abstract: No abstract text available
    Text: FQD3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


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    FQD3P50 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQP3P50 P-Channel QFET MOSFET -500 V, -2.7 A, 4.9 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


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    FQP3P50 O-220 FQP3P50 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB1P50 / FQI1P50 P-Channel QFET MOSFET - 500 V, - 1.5 A, 10.5 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


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    FQB1P50 FQI1P50 FQI1P50 PDF

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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N50-P Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50-P is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


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    5N50-P 5N50-P QW-R205-027 PDF

    circuit diagram of mosfet based smps power supply

    Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
    Text: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The


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    new/fdc6901l FDC6901L FDJ129P Power247TM, circuit diagram of mosfet based smps power supply FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel PDF

    FQPF2P40

    Abstract: No abstract text available
    Text: QFET TM FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQPF2P40 -400V, FQPF2P40 PDF

    p-channel 200V

    Abstract: FQP2P40
    Text: QFET TM FQP2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQP2P40 -400V, p-channel 200V FQP2P40 PDF

    FQP2P40

    Abstract: No abstract text available
    Text: QFET TM FQP2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQP2P40 -400V, FQP2P40 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD3P50 / FQU3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


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    FQD3P50 FQU3P50 FQU3P50 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD2P40 FQU2P40 -400V, FQU2P40 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQB2P40 FQI2P40 -400V, FQI2P40TU O-262 PDF

    FQD2P40

    Abstract: No abstract text available
    Text: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD2P40 FQU2P40 -400V, FQU2P40TU O-251 FQU2P40 PDF

    FQD2P40

    Abstract: FQU2P40
    Text: QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD2P40 FQU2P40 -400V, FQU2P40 PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD2P40 FQU2P40 -400V, FQD2P40TF O-252 FQD2P40TM PDF

    FQD2P40

    Abstract: FQU2P40
    Text: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD2P40 FQU2P40 -400V, FQU2P40 PDF

    P-Channel mosfet 400v to220

    Abstract: No abstract text available
    Text: FQP2P40 June 2000 QFET TM FQP2P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP2P40 -400V, O-220 P-Channel mosfet 400v to220 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQP4P40 August 2000 QFET FQP4P40 TM 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP4P40 -400V, PDF

    FQG4904

    Abstract: 40v N- and P-Channel dip
    Text: TM FQG4904 400V Dual N & P-Channel MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQG4904 -400V, FQG4904 40v N- and P-Channel dip PDF

    400v p-channel mosfet

    Abstract: FQP4P40 P-Channel mosfet 400v to220
    Text: FQP4P40 August 2000 QFET TM FQP4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP4P40 -400V, 400v p-channel mosfet FQP4P40 P-Channel mosfet 400v to220 PDF

    FQPF4P40

    Abstract: No abstract text available
    Text: FQPF4P40 August 2000 QFET TM FQPF4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQPF4P40 -400V, FQPF4P40 PDF

    40v N- and P-Channel dip-8

    Abstract: No abstract text available
    Text: TM FQG4904 400V Dual N & P-Channel MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQG4904 -400V, FQG4904TU 40v N- and P-Channel dip-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQPF2P40 June 2000 QFET TM FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQPF2P40 -400V, PDF