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    P-CHANNEL MOSFET 25V SOP8 Search Results

    P-CHANNEL MOSFET 25V SOP8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOSFET 25V SOP8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mosfet

    Abstract: SSF4953
    Text: SSF4953 30V Dual P-Channel MOSFET DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).


    Original     		PDF SSF4953 SSF4953 Mosfet

    MOSFET 60V 75A

    Abstract: TF-680
    Text: 235 STP9 STP92 P Channel Enhancement Mode MOSFET - 7.5A DESCRIPTION STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		PDF STP9235 STP92 STP9235 -25V/-7 -25V/-6 -25V/-5 MOSFET 60V 75A TF-680

    Untitled

    Abstract: No abstract text available
    Text: STP6635GH P Channel Enhancement Mode MOSFET -40.0A DESCRIPTION STP6635GH is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using


    Original     		PDF STP6635GH STP6635GH STP413D O-252 O-251 -30V/-26 -30V/-16 O-252

    cmos 4000 series

    Abstract: fully protected p channel mosfet high speed mosfet driver
    Text: IXDD408PI IXDD408YI AD VANCE TECHNICAL INFORMA TION ADV INFORMATION Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch Up Protected • High Peak Output Current: 8A Peak


    Original     		PDF IXDD408PI IXDD408YI 5000pF IXDD408 IXDD408YI 408PI cmos 4000 series fully protected p channel mosfet high speed mosfet driver

    cmos 4000 series

    Abstract: IXDD414YI IXDD414PI
    Text: IXDD414PI IXDD414YI AD VANCE TECHNICAL INFORMA TION ADV INFORMATION Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch-Up Protected • High Peak Output Current: 14A Peak


    Original     		PDF IXDD414PI IXDD414YI IXDD414 IXDD414YI 414PI 414YI cmos 4000 series

    IXDI404PI

    Abstract: IXDN404PI IXDI404SI-16 IXDN404 IXDF404PI cl470 IXDF404
    Text: IXDN404PI / N404SI / N404SI-16 IXDF404PI / F404SI / F404SI-16 IXDI404PI / I404SI / I404SI-16 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire


    Original     		PDF IXDN404PI N404SI N404SI-16 IXDF404PI F404SI F404SI-16 IXDI404PI I404SI I404SI-16 1800pF IXDI404SI-16 IXDN404 cl470 IXDF404

    lm339 igbt driver

    Abstract: low power mosfet Ultrafast MOSFET Driver smps LM339 LM339 APPLICATION 404si fully protected p channel mosfet 404SI-16 IXDD404PI IXDD404
    Text: IXDD404PI / 404SI / 404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 25V


    Original     		PDF IXDD404PI 404SI 404SI-16 1800pF IXDD404 Edisonstrasse15 D-68623; lm339 igbt driver low power mosfet Ultrafast MOSFET Driver smps LM339 LM339 APPLICATION fully protected p channel mosfet 404SI-16

    404SI

    Abstract: 404SI-16 IXDD404 IXDD404PI IXFN100N20 2N7000 IXFD100N20 404SIA
    Text: PRELIMINARY DATA SHEET IXDD404PI / 404SI / 404SIA / 404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak


    Original     		PDF IXDD404PI 404SI 404SIA 404SI-16 1800pF IXDD404 Edisonstrasse15 D-68623; 404SI-16 IXFN100N20 2N7000 IXFD100N20

    IXDN402PI

    Abstract: n402 IXDF402PI IXDI402PI IXDN402
    Text: IXDN402PI / N402SI / N402SI-16 IXDF402PI / F402SI / F402SI-16 IXDI402PI / I402SI / I402SI-16 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire


    Original     		PDF IXDN402PI N402SI N402SI-16 IXDF402PI F402SI F402SI-16 IXDI402PI I402SI I402SI-16 1000pF n402 IXDN402

    IXDF402SIA

    Abstract: driving mosfet/igbt with pulse transformer driver IXDI402SIA IXDN402 IXDN402PI IXDN402SI IXDN402SI-16 IXDN402SIA
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 2A Peak


    Original     		PDF IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15 IXDF402SIA driving mosfet/igbt with pulse transformer driver IXDI402SIA IXDN402PI IXDN402SI IXDN402SI-16 IXDN402SIA

    IXDF404

    Abstract: IXDI404PI IXDD404PI IXDN404 IXDI404 IXDN404PI IXDN404SI IXDN404SIA SOIC-16
    Text: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 4A Peak


    Original     		PDF IXDN404 IXDI404 IXDF404 1800pF IXDN404/IXDI404/IXDF404 IXDN404 IXDD404PI IXDF404 IXDI404PI IXDD404PI IXDN404PI IXDN404SI IXDN404SIA SOIC-16

    gs 7103

    Abstract: FY4AEJ-03
    Text: MITSUBISHI POWER MOSFET ARY FY4AEJ-03 MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FY4AEJ-03 OUTLINE DRAWING ➄ ➀ ➃ 6.0 4.4 ➇ Dimensions in mm


    Original     		PDF FY4AEJ-03 30/80m gs 7103 FY4AEJ-03

    FY5AEJ-03

    Abstract: No abstract text available
    Text: MITSUBISHI POWER MOSFET ARY FY5AEJ-03 IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET FY5AEJ-03 OUTLINE DRAWING ➄ ➀ ➃ 6.0 4.4 ➇ Dimensions in mm


    Original     		PDF FY5AEJ-03 30/65m FY5AEJ-03

    p channel mosfet 100v

    Abstract: ST13P10 S 170 MOSFET TRANSISTOR TO-252 MOSFET p channel Stanson Technology RD62 mosfet vgs 5v vds 100v TO-251 Outline
    Text: ST13P10 P Channel Enhancement Mode MOSFET -13.0A DESCRIPTION ST13P10 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST13P10 has been designed specially to improve the overall efficiency of DC/DC converters using either


    Original     		PDF ST13P10 ST13P10 O-252 O-251 -100V/-13 O-252 O-251 p channel mosfet 100v S 170 MOSFET TRANSISTOR TO-252 MOSFET p channel Stanson Technology RD62 mosfet vgs 5v vds 100v TO-251 Outline

    STP4407

    Abstract: mosfet 407 mosfet vgs 5v
    Text: 4407 STP STP4 P Channel Enhancement Mode MOSFET - 12A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF STP4407 STP4407 -30V/-12A, -30V/-10A, mosfet 407 mosfet vgs 5v

    Untitled

    Abstract: No abstract text available
    Text: IXDD408PI / 408SI / 408YI / 408CI 8 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V


    Original     		PDF IXDD408PI 408SI 408YI 408CI 2500pF IXDD408 IXDD480 Edisonstrasse15 D-68623;

    IXDD404PI

    Abstract: IXDI404SI IXDI404SI-16 IXDN404 IXDF404 IXDI404 IXDN404PI IXDN404SI IXDN404SIA SOIC-16
    Text: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak


    Original     		PDF IXDN404 IXDI404 IXDF404 1800pF IXDN404/IXDI404/IXDF404 IXDN404 IXDD404PI IXDD404PI IXDI404SI IXDI404SI-16 IXDF404 IXDN404PI IXDN404SI IXDN404SIA SOIC-16

    FDS8884 equivalent

    Abstract: FDS8884 adapter 12v 5a FDS8884 SOP8 wurth 744 adapter 12v 1a AAT2688 BAS16 Si4686DY SI4686
    Text: PRODUCT DATASHEET AAT2688 SystemPowerTM 4.5A PMIC Solution for 12V Adapter Systems with 2-Output High Performance Step-Down Converters General Description Features The AAT2688 provides two independently regulated DC outputs: a high voltage synchronous step-down Buck


    Original     		PDF AAT2688 AAT2688 FDS8884 equivalent FDS8884 adapter 12v 5a FDS8884 SOP8 wurth 744 adapter 12v 1a BAS16 Si4686DY SI4686

    gs 7103

    Abstract: FY4AEJ-03 Hitachi DSA00757
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT DATASHEET AAT2688 SystemPowerTM 4.5A PMIC Solution for 12V Adapter Systems with 2-Output High Performance Step-Down Converters General Description Features The AAT2688 provides two independently regulated DC outputs: a high voltage synchronous step-down Buck


    Original     		PDF AAT2688 AAT2688

    Untitled

    Abstract: No abstract text available
    Text: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak


    Original     		PDF IXDN404 IXDI404 IXDF404 1800pF IXDN404/IXDI404/IXDF404 IXDD404PI IXDD404SI-CT

    IXDI404PI

    Abstract: IXDF404SI IXDF404PI IXDF404 IXDI404 IXDN404 IXDN404PI IXDN404SI IXDN404SIA SOIC-16
    Text: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V


    Original     		PDF IXDN404 IXDI404 IXDF404 1800pF IXDN404/IXDI404/IXDF404 IXDN404 IXDD404PI IXDI404PI IXDF404SI IXDF404PI IXDF404 IXDN404PI IXDN404SI IXDN404SIA SOIC-16

    FY5AEJ-03

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF and00 FY5AEJ-03

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE SO P-8 PRODUCT SUMMARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce VDS V R o s ic a m o ) 25 4. Gate 5. 6, 7, 8. Drain Features Id (A) 1 5 V cs= 10V 10 21 @ V « s= 4 .5 V


    OCR Scan     		PDF TSM4410 4410C