Untitled
Abstract: No abstract text available
Text: FQA36P15 / FQA36P15_F109 P-Channel QFET MOSFET −150 V, -36 A, 90 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQA36P15
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N25-P Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N25-P is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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15N25-P
15N25-P
15N25L-TF1-T
15N25G-TF1-T
15Nat
QW-R502-A24
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N70-P Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION 1 The UTC 6N70-P is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate
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6N70-P
6N70-P
O-251
O-220F2
O-220F
O-252
6N70L-TF2-T
6N70G-TF2-T
6N70L-TF3-T
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FQB15P12
Abstract: FQI15P12
Text: FQB15P12 / FQI15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB15P12
FQI15P12
-120V,
FQI15P12
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Untitled
Abstract: No abstract text available
Text: FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP15P12/FQPF15P12
-120V,
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N70-P Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION 1 1 FEATURES TO-251 * RDS ON <1.8Ω @ VGS=10V, ID=3A * High switching speed TO-220F2 TO-220F The UTC 6N70-P is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a
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6N70-P
O-251
O-220F2
O-220F
6N70-P
O-252
6N70L-TF2-T
6N70G-TF2-T
6N70L-TF3-T
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Untitled
Abstract: No abstract text available
Text: FQB15P12 / FQI15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB15P12
FQI15P12
-120V,
FQB15P12TM
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fqPF15P12
Abstract: keypad 4x4 FQP15P12 fqpf15
Text: FQP15P12/FQPF15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP15P12/FQPF15P12
-120V,
fqPF15P12
keypad 4x4
FQP15P12
fqpf15
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FQA36P15
Abstract: No abstract text available
Text: FQA36P15 150V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA36P15
-150V,
FQA36P15
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Untitled
Abstract: No abstract text available
Text: FQA36P15 P-Channel QFET MOSFET −150 V, -36 A, 90 mΩ Features Description • -36 A, -150 V, RDS on = 90 mΩ (Max) @VGS = -10 V, ID = -18 A This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar • Low Gate Charge (Typ. 81 nC)
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FQA36P15
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FQA36P15
Abstract: No abstract text available
Text: TM FQA36P15 150V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA36P15
-150V,
FQA36P15
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MOSFET N-CH 200V
Abstract: MOSFET P-CH 250V 5A sd 150 zener diode STS1C1S250
Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω
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STS1C1S250
STS1C1S250
MOSFET N-CH 200V
MOSFET P-CH 250V 5A
sd 150 zener diode
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STS1C1S250
Abstract: P-Channel MOSFET 120v dual zener diode 10v MOSFET N-CH 200V
Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω
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STS1C1S250
STS1C1S250
P-Channel MOSFET 120v
dual zener diode 10v
MOSFET N-CH 200V
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STS1C1S250
Abstract: Zener Diode B1 9
Text: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω
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STS1C1S250
STS1C1S250
Zener Diode B1 9
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FQA36P15_F109
Abstract: F109 FQA36P15 P-Channel MOSFET 120v
Text: QFET FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET Features Description • • • • • • • These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA36P15
-150V,
110pF)
FQA36P15_F109
F109
P-Channel MOSFET 120v
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FQA36P15_F109
Abstract: F109 FQA36P15 P-CHANNEL MOSFET
Text: QFET FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET Features Description • • • • • • • These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA36P15
-150V,
110pF)
FQA36P15_F109
F109
P-CHANNEL MOSFET
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Untitled
Abstract: No abstract text available
Text: AP13P15GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -150V RDS ON 300mΩ ID G -13A S Description
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AP13P15GS/P-HF
-150V
O-263
AP13P15GP)
O-220
100us
100ms
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SVDF8N60F
Abstract: 8N60
Text: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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O-220
01-Apr-2011
O-220
O-220F
O-220F
47MAX
75MAX
SVDF8N60F
8N60
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AP13P15GP
Abstract: No abstract text available
Text: AP13P15GS/P Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -150V RDS ON 300mΩ ID G ▼ RoHS Compliant BVDSS -13A S
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AP13P15GS/P
-150V
O-263
AP13P15GP)
100us
100ms
AP13P15GP
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Untitled
Abstract: No abstract text available
Text: AP13P15GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Fast Switching Characteristic RoHS Compliant & Halogen-Free ID G -150V 300m -13A S Description Advanced Power MOSFETs from APEC provide the designer with the
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AP13P15GS/P-HF
-150V
O-263
AP13P15GP)
100us
100ms
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4n60f
Abstract: 4N60P
Text: 4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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O-251)
O-252)
O-251
O-252
O-252
13-Apr-2011
4n60f
4N60P
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IRF5NJ6215
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
IRF5NJ6215
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Untitled
Abstract: No abstract text available
Text: AP15P15GH-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D -140V RDS ON Simple Drive Requirement ID Fast Switching Characteristic RoHS Compliant & Halogen-Free 180m G -15A S Description
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AP15P15GH-HF
-140V
O-252
100us
100ms
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Untitled
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
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