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    P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MARKING Search Results

    P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S-90P0112SMA-TF

    Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF
    Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0332SUA S-90P0332SUA OT-89-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0112SMA-TF

    Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0222SUA S-90P0222SUA OT-89-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0112SMA

    Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0112SMA S-90P0112SMA OT-23-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    FET MARKING CODE

    Abstract: sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA S-90P0112SMA-TF S-90P0222SUA-TF
    Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0112SMA S-90P0112SMA OT-23-3 FET MARKING CODE sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA-TF S-90P0222SUA-TF

    S-90P0112SMA-TF

    Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF 90P03
    Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0332SUA S-90P0332SUA OT-89-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 90P03

    S-90P0112SMA-TF

    Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0222SUA S-90P0222SUA OT-89-3 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0112SMA

    Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0112SMA S-90P0112SMA OT-23-3 OT-23-3 S-90P0112SMA-TF FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0222SUA

    Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
    Text: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0222SUA S-90P0222SUA OT-89-3 OT-89-3 S-90P0222SUA-TF 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF

    S-90P0332SUA

    Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
    Text: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set


    Original     		PDF S-90P0332SUA S-90P0332SUA OT-89-3 OT-89-3 S-90P0332SUA-TF S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent

    2SJ356

    Abstract: C10535E MEI-1202 marking pr p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS in mm a switching element that can be directly driven by the output of an 4.5 ±0.1 IC operating at 5 V.


    Original     		PDF 2SJ356 2SJ356 C10535E MEI-1202 marking pr p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

    2SJ357

    Abstract: TC-2490 C11531E
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings unit: mm used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V.


    Original     		PDF 2SJ357 2SJ357 TC-2490 C11531E

    2SJ358

    Abstract: MEI-1202
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be 5.7 ±0.1 1.0 3 0.5 ±0.1 0.5 ±0.1 2.1


    Original     		PDF 2SJ358 2SJ358 MEI-1202

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SJ317 Silicon P-Channel MOS FET November 1996 Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.


    Original     		PDF 2SJ317 Hitachi DSA002713

    2sj317

    Abstract: Hitachi 2SJ Hitachi DSA002779
    Text: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline 2SJ317


    Original     		PDF 2SJ317 2sj317 Hitachi 2SJ Hitachi DSA002779

    FET marking code 365

    Abstract: 2SJ244 Hitachi 2SJ Hitachi DSA00337
    Text: 2SJ244 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK


    Original     		PDF 2SJ244 FET marking code 365 2SJ244 Hitachi 2SJ Hitachi DSA00337

    2SJ278

    Abstract: Hitachi DSA00389
    Text: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SJ278 2SJ278 Hitachi DSA00389

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ278 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SJ278 Hitachi 2SJ Hitachi DSA002779

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SJ244 Silicon P-Channel MOS FET DIII-L November 1996 Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.


    Original     		PDF 2SJ244 Hitachi DSA002713

    2SJ166

    Abstract: 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
    Text: m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ166, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power


    OCR Scan     		PDF 2SJ166 2SJ166, 2SJ166 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking

    Hitachi 2SJ

    Abstract: No abstract text available
    Text: 2SJ186 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 209 2SJ186


    OCR Scan     		PDF 2SJ186 2SJ186 5x20x0 Hitachi 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SJ186 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline


    OCR Scan     		PDF 2SJ186

    Untitled

    Abstract: No abstract text available
    Text: 2SJ317 Silicon P-Channel MOS FET HITACHI Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline


    OCR Scan     		PDF 2SJ317 5x20x0

    Hitachi 2SJ

    Abstract: No abstract text available
    Text: 2SJ244 - Silicon P Channel MOS FET Application UPAK High speed power switching Low voltage operation 1 Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.


    OCR Scan     		PDF 2SJ244 Hitachi 2SJ

    Hitachi 2SJ

    Abstract: No abstract text available
    Text: 2SJ244 Silicon P-Channel MOS FET HITACHI Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for cam era or VTR motor drive circuit, power switch, solenoid drive and etc. Outline


    OCR Scan     		PDF 2SJ244 5x20x0 Hitachi 2SJ