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    P-CHANNEL 60V 100A MOSFET Search Results

    P-CHANNEL 60V 100A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL 60V 100A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2192 ATP304 P-Channel Power MOSFET -60V, -100A, 6.5m , ATPAK ht t p://onse m i.c om Features • On-resistance RDS on 1=5.0m (typ.) • Input Capacitance Ciss=13000pF(typ.) • 4.5V drive • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25°C


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    PDF ENA2192 ATP304 -100A, 13000pF A2192-6/6

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2192 ATP304 P-Channel Power MOSFET -60V, -100A, 6.5mΩ, ATPAK http://onsemi.com Features • On-resistance RDS on 1=5.0mΩ(typ.) • Input Capacitance Ciss=13000pF(typ.) • 4.5V drive • Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25°C


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    PDF ENA2192 ATP304 -100A, 13000pF PW10s, L100H, A2192-6/6

    FX50SMJ-06

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX50SMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX50SMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4


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    PDF FX50SMJ-06 FX50SMJ-06

    FX50VSJ-06

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX50VSJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 1.5 max 10.5 max 1.3 3.0 +0.3 –0.5


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    PDF FX50VSJ-06 FX50VSJ-06

    fx50umj06

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX50UMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX50UMJ-06 OUTLINE DRAWING Dimensions in mm 4.5 10.5 max 1.3 16 7.0


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    PDF FX50UMJ-06 fx50umj06

    FX50KMJ-06

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET RY A N I FX50KMJ-06 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX50KMJ-06 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2


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    PDF FX50KMJ-06 FX50KMJ-06

    welder inverter mosfet

    Abstract: "MOSFET Module" FM200TU-07A FM200TU-3A MOSFET IGSS 100A gun diode bias symbol
    Text: FM200TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 6-Pack High Power MOSFET Module 100 Amperes/150 Volts A D F G G Q H K L P AB E N AE J 7 B Z AB AC P X (11 PLACES) L M R AD N 1 13 14 T W B A S AF 6 12 U TC MEASURED POINT


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    PDF FM200TU-3A Amperes/150 welder inverter mosfet "MOSFET Module" FM200TU-07A FM200TU-3A MOSFET IGSS 100A gun diode bias symbol

    Untitled

    Abstract: No abstract text available
    Text: FM200TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-Pack High Power MOSFET Module 100 Amperes/150 Volts A D F G G Q H K L P AB E N AE J 7 B Z AB AC P X (11 PLACES) L M R AD N 1 13 14 T W B A S AF 6 12 U


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    PDF FM200TU-3A Amperes/150

    "MOSFET Module"

    Abstract: constant current source welder mosfet FM200TU-07A FM200TU-3A AC welder circuit diagram
    Text: FM200TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 100 Amperes/150 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


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    PDF FM200TU-3A Amperes/150 "MOSFET Module" constant current source welder mosfet FM200TU-07A FM200TU-3A AC welder circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: FM200TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 100 Amperes/150 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED


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    PDF FM200TU-3A Amperes/150

    Untitled

    Abstract: No abstract text available
    Text: FM200TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 100 Amperes/150 Volts A D F G G Q H K N X (11 PLACES) L L M P AB Z AB AC N P R AD 7 B E AE J 1 13 14 W T S B A AF U TC MEASURED


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    PDF FM200TU-3A Amperes/150

    E80276

    Abstract: FM200TU-3A
    Text: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated


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    PDF FM200TU-3A E80276 E80271 E80276 FM200TU-3A

    DIODE T25

    Abstract: "MOSFET Module" DIODE T25 4 E80276 FM200TU-3A
    Text: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated


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    PDF FM200TU-3A E80276 E80271 30K/W DIODE T25 "MOSFET Module" DIODE T25 4 E80276 FM200TU-3A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated


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    PDF FM200TU-3A E80276 E80271 30K/W

    Untitled

    Abstract: No abstract text available
    Text: 35E D • 023^320 0017305 0 « S I P SIPMOS P Channel MOSFET SP0610T SIEMENS/ SPCL-. SEMICONDS _3.5" • SIPM OS - enhancement mode • Drain-source voltage Voi = -60V • Continuous drain current I D = -0.13A • Drain-source on-resistance


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    PDF SP0610T 0610T Q67000-S065 T-37-25 V01Hl 23b320 0Q173Q7 061OT 80f/sÂ

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS70UMJ-06 HIGH-SPEED SWITCHING USE FS70UMJ-06 OUTLINE DRAWING Dimensions in mm , 4.5 , 1.3 0.5 u 2.6 O I' 'f • 4V DRIVE • VDSS . 60V • rDS ON (MAX) .7m ii


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    PDF FS70UMJ-06 O-220

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET ? FS5VS-06 ! HIGH-SPEED SWITCHING USE FS5VS-06 I «10V DRIVE | • VDSS .60V | • rD S O N (M AX ) j « I D .


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    PDF FS5VS-06 571Q2

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50SM-06 HIGH-SPEED SWITCHING USE FS50SM-06 OUTLINE DRAWING • 10V DRIVE î : G A TE 2 D R A IN 3) S O U R C E 4 D R A IN • VDSS .60V • rDS ON) (M AX) . 2 2 m £2


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    PDF FS50SM-06

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50VSH-06 HIGH-SPEED SWITCHING USE FS50VSH-06 • 2.5V DRIVE • VDSS .60V • rDS ON (MAX) .21 mQ


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    PDF FS50VSH-06

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET J FS50SMJ-06 | HIGH-SPEED SWITCHING USE FS50SMJ-06 OUTLINE DRAWING 15.9MAX. D im e n s io n s in m m 4 .5 . . 1.5 CGPÌ 3.2 : f • 4V DRIVE • VDSS . 60V


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    PDF FS50SMJ-06

    FS70UM-06

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS70UM-06 HIGH-SPEED SWITCHING USE FS70UM-06 OUTLINE DRAWING Dimensions in mm 4.5 1.3 0.5 2.6 O ? ••4'- • 10V DRIVE • VDSS . 60V o - .1 GATE 1' DRAIN


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    PDF FS70UM-06 O-220 571Q2 FS70UM-06

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 OUTLINE DRAWING Dimensions in mm 6.5 5.0 ±0.2 3 ^ -F T 0.9MAX. 0.5 ±0 .2 Í 2.3 C /fl 2.3 i 9 fl GATE DRAIN SOURCE DRAIN • 2.5V DRIVE • VDSS .


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    PDF FS10ASH-06

    mosfet 803 on

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET I FS5UM-06 | i HIGH-SPEED SWITCHING USE FS5UM-06 • 10V DRIVE • VDSS . 60V • TDS ON (M AX) .0.16Q


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    PDF FS5UM-06 5710e mosfet 803 on

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10VSH-06 HIGH-SPEED SWITCHING USE FS10VSH-06 OUTLINE DRAWING Dimensions in mm 1 0.5M A X . . 4 .5 , 0.5 Ì ! • 2.5V DRIVE • Voss . 60V • rDS ON (MAX) .


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    PDF FS10VSH-06 O-220S