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    P-CHANNEL 30V DS MOSFET Search Results

    P-CHANNEL 30V DS MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0393DPA-00#J53 Renesas Electronics Corporation 30V, 40A, 4.3MΩ Max. N Channel Power MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL 30V DS MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AOP605

    Abstract: AOP605L AOP605 Inverter MOSFET
    Text: AOP605 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) The AOP605 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The


    Original     		PDF AOP605 AOP605 AOP605L AOP605 Inverter MOSFET

    STripFET

    Abstract: STS3DPFS30
    Text: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		PDF STS3DPFS30 STripFET STS3DPFS30

    P Channel STripFET

    Abstract: STripFET STS3DPFS30 mosfet p channel 30v 3a
    Text: STS3DPFS30 P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		PDF STS3DPFS30 P Channel STripFET STripFET STS3DPFS30 mosfet p channel 30v 3a

    STripFET

    Abstract: STS3DPFS30L
    Text: STS3DPFS30L P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V <0.16Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		PDF STS3DPFS30L STripFET STS3DPFS30L

    MI3403

    Abstract: iss 400 SOT233 iss-400 diode MI34 mi340
    Text: MI3403 P -Channel 30 V D-S MOSFET Features General Description This miniature surface monut MOSFET uses V DS (V) = -30V advanced trench process , low R DS(on) assures minimal power loss and energy conversion , which makes this device ideal for use in power


    Original     		PDF MI3403 OT-23 MI3403 O-236. OT233-071012 iss 400 SOT233 iss-400 diode MI34 mi340

    STS3DPFS30L

    Abstract: No abstract text available
    Text: STS3DPFS30L  P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V <0.16Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		PDF STS3DPFS30L STS3DPFS30L

    STS3DPFS30

    Abstract: mosfet p channel 30v 3a
    Text: STS3DPFS30  P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V 0.09Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		PDF STS3DPFS30 STS3DPFS30 mosfet p channel 30v 3a

    SSM4509GM

    Abstract: No abstract text available
    Text: SSM4509GM N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-CH BV DSS D2 D2 D1 D2 D1 D1 D1 Low on-resistance Fast switching characteristic SO-8 30V 14mΩ R DS ON ID G2 G2 S2 G1 S2 S1 G1 S1 10A P-CH BVDSS -30V RDS(ON) Description


    Original     		PDF SSM4509GM SSM4509GM

    STS3DPFS30

    Abstract: No abstract text available
    Text: STS3DPFS30 P - CHANNEL ENHANCEMENT MODE POWER MOSFET PLUS SCHOTTKY RECTIFIER TARGET DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V 0.09Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.44V SO-8 DESCRIPTION: This product associates the latest low voltage


    Original     		PDF STS3DPFS30 STS3DPFS30

    STM2DPFS30L

    Abstract: max8823
    Text: STM2DPFS30L  P - CHANNEL 30V - 0.145Ω - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER  PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V <0.165Ω 2A SCHOTTKY IF (A V) V RRM V F(M AX) 1A 40V 0.55V MiniSO-8 DESCRIPTION:


    Original     		PDF STM2DPFS30L STM2DPFS30L max8823

    SSM4532M

    Abstract: No abstract text available
    Text: SSM4532M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS N-ch Simple drive requirement BV D2 Low on-resistance G2 S2 SO-8 50mΩ R DS ON D2 D1 D1 Fast switching +30V DSS S1 P-ch G1 Description ID +5A BV DSS -30V RDS(ON) 70mΩ ID MOSFETs from Silicon Standard Corp. provide the


    Original     		PDF SSM4532M SSM4532M

    Untitled

    Abstract: No abstract text available
    Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 8 7 6 D 3 S 5 D 4 G -10 AMPERES DRAIN SOURCE VOLTAGE D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free -30 VOLTAGE * Super high dense * Cell design for extremely low R DS(ON) * -30V/-10A,R DS(ON)<30mΩ@VGS = -10V


    Original     		PDF WTK4435 -30V/-10A -30V/-7A WTK4435, 09-Jan-2014

    Untitled

    Abstract: No abstract text available
    Text: DMP3028LSD 30V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Description • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(ON and yet maintain superior switching Mechanical Data V(BR)DS


    Original     		PDF DMP3028LSD DS35966

    4957gm

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4957GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low On-resistance R DS ON 24mΩ Fast Switching Performance ID -7.7A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2 S1


    Original     		PDF AP4957GM-HF-3 AP4957GM-HF-3 AP4957 4957GM 4957gm

    SSM4407GM

    Abstract: 4407gm 4407 MARKING CODE SO-8
    Text: SSM4407GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS -30V R DS ON 14mΩ ID -10.7A DESCRIPTION The SSM4407GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC


    Original     		PDF SSM4407GM SSM4407GM 4407GM 330mm) 4407gm 4407 MARKING CODE SO-8

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP2625GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Low Gate Drive -30V R DS ON 185mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description S2


    Original     		PDF AP2625GY-HF-3 OT-26 OT-26 12REF 37REF 90REF 20REF 95REF

    SSM9435GM

    Abstract: 9435GM mosfet 9435GM ssm9435 marking codes transistors SSs 9435g 24v 6A mosfet MOSFET code 9435gm
    Text: SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS -30V R DS ON 50mΩ ID -5.3A DESCRIPTION The SSM9435GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as battery


    Original     		PDF SSM9435GM SSM9435GM 9435GM 330mm) 9435GM mosfet 9435GM ssm9435 marking codes transistors SSs 9435g 24v 6A mosfet MOSFET code 9435gm

    Mosfet

    Abstract: SSF3365
    Text: SSF3365 30V P-Channel MOSFET D DESCRIPTION The SSF3365 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF SSF3365 SSF3365 OT-23 950TYP 550REF Mosfet

    45N03L

    Abstract: FP45N03L F45N03L RFP45N03L 014E3 f45n 03LSM
    Text: CIS H A R R IS RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Packages Features JEDEC TO-220AB • 4 5 A , 30V • r DS ON = 0.022SJ • Tem perature C o m p e n s a tin g PS PICE Model


    OCR Scan     		PDF RFP45N03L, RF1S45N03L, RF1S45N03LSM O-220AB 022SJ O-262AA 61e-13 06e-3 57e-6 16e-9 45N03L FP45N03L F45N03L RFP45N03L 014E3 f45n 03LSM

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s TSM3455 30V P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 170 @ VGS= -4.5V -2.7 -30 1 23 Features


    OCR Scan     		PDF TSM3455 3455C

    tsm3455

    Abstract: No abstract text available
    Text: s TAIW AN TSM3455 SEMICONDUCTOR 30V P-Channel MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23


    OCR Scan     		PDF TSM3455 3455C tsm3455

    IRF9410

    Abstract: No abstract text available
    Text: International I"R Rectifier P D -9.1562A PRELIMINARY IRF9410 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V dss = 30V R ds oh = 0.030É2


    OCR Scan     		PDF IRF9410 IRF7403 IRF7413 IRF7603 IRF9410

    IRF7416

    Abstract: No abstract text available
    Text: PD - 9.1356D International IO R Rectifier IRF7416 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Voss = -30V ^DS on =


    OCR Scan     		PDF 1356D IRF7416 IRF7416

    diode sy 171 10

    Abstract: "DIODE" SY 171 1 g
    Text: PD - 9.12 64 C International IOR Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V qss = -30V f^DS(on) = 0.09Î2


    OCR Scan     		PDF EIA-541. diode sy 171 10 "DIODE" SY 171 1 g