Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P-CHANNEL 200V MOS FET Search Results

    P-CHANNEL 200V MOS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL 200V MOS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ406

    Abstract: No abstract text available
    Text: 2SJ406 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. • Micaless package facilitating easy mounting. Absolute Maximum Ratings / Ta=25°C


    Original     		PDF 2SJ406 990929TM2fXHD 2SJ406

    2SJ457

    Abstract: No abstract text available
    Text: 2SJ457 P- Channel Silicon MOS FET Very High-speed Switching. TENTATIVE Features and Applications • High-speed diode built-in. • Very high-speed switching. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC


    Original     		PDF 2SJ457 --10mA --200V --10V 991005TM2fXHD 2SJ457

    TC2320TG-G

    Abstract: 125OC 27BSC TC2320 TC2320TG
    Text: TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC2320TG consists of a high voltage, low threshold N- and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode normally-off


    Original     		PDF TC2320 TC2320TG 27BSC DSFP-TC2320 C112206 TC2320TG-G 125OC 27BSC TC2320

    ultrasound transducer circuit driver 1mhz

    Abstract: TC6320 TC6320TG-G p-channel 200V Piezoelectric 1Mhz 125OC 27BSC TC6320TG gate-source zener
    Text: TC6320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage low threshold N-channel and P-channel MOSFETs in an SO8 package. Both MOSFETs have integrated gate-source


    Original     		PDF TC6320 TC6320 27BSC DSFP-TC6320 C112106 ultrasound transducer circuit driver 1mhz TC6320TG-G p-channel 200V Piezoelectric 1Mhz 125OC 27BSC TC6320TG gate-source zener

    SKP202

    Abstract: No abstract text available
    Text: N-Channel MOS FET SKP202 •Features March. 2007 ■Package-TO-263 ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D 2 G (1) S (3) ■Absolute maximum ratings


    Original     		PDF SKP202 Package---TO-263 PW100sduty 180HILp T02-007EA-070227 SKP202

    fkp202

    Abstract: No abstract text available
    Text: N-Channel MOS FET FKP202 •Features March. 2007 ■Package-FM20 TO220 Full Mold ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guarantee ■Applications ●PDP driving ●High speed switching ■Equivalent circuit D (2) G (1)


    Original     		PDF FKP202 Package---FM20 PW100sduty 180HILp T02-006EA-070227 fkp202

    RDN150N20

    Abstract: 100V 100A mos fet
    Text: RDN150N20 Transistors 10V Drive Nch MOS FET RDN150N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.


    Original     		PDF RDN150N20 O-220FN RDN150N20 100V 100A mos fet

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT CÂTÂIO' Æ lltro n P-CHANNEL ENHANCEMENT MOS FET -200V,-6.5A. 0.8n SDF9230 SDF9230 SDF9230 FEATURES • • • • • • • • ABSOLUTE MAXIMUM RATINGS PARAMETER JAA JAB JDA RUGGED PACKAGE HI -REL CONSTRUCTION CERAMIC EYELETS:JAA.JAB LEAD BENDING OPTIONS


    OCR Scan     		PDF -200V SDF9230 MIL-S-19500 03bflbQ2

    IRF220 equivalent

    Abstract: IRF220 QDD0305 T-39
    Text: 8 3 6 8 6 02 S O L IT R O N D E V IC E S INC f iB b a b P g □ □ □ 0 3 0 0 3 T-39-11 Solitron_ D E V IC E S , , * c . p 0 W E R ^ o s SFK204A3 D E V |G E 200V/5A N Channel, TO-3 Package, IRF220 equivalent The new S.olitron Power MOS technology combines the efficient


    OCR Scan     		PDF D0D0300 T-39-11 00V/5A) IRF220 F/450V NP214A IRF220 equivalent QDD0305 T-39

    hitachi mosfet power amplifier audio application

    Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
    Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3


    OCR Scan     		PDF RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56

    MP6101

    Abstract: n channel fet array
    Text: MP6101 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE 7T-MOS FET 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS MOTOR DRIVE APPLICATIONS. •Pack a g e w i t h Heat Sink Isolated Lead. . H i g h D rain P o wer Dissipation. : P T =120W


    OCR Scan     		PDF MP6101 300yA Ta-25 Drain940 100/i MP6101 n channel fet array

    2SK2474

    Abstract: No abstract text available
    Text: Panasonic P ow er F-M O S FETs 2SK2474 Silicon N-Channel MOS Unit : mm For high-speed switching 5.3+0.1 • Features • Low ON-resistance RDS on • High-speed switching • High drain-source voltage (V d s s ) Absolute Maximum Ratings Param eter Drain-Source breakdown voltage


    OCR Scan     		PDF 2SK2474 SC-63 100il 2SK2474

    2SK2083

    Abstract: bx090
    Text: Ordering num ber:EN 4617 _ 2SK2083 No.4617 N-Channel MOS Silicon FET Very High-Speed Switching Applications I Features • Low ON resistance • Very high-speed switching •Micaless package facilitating mounting Absolute Maximum R atings at Ta = 25°C


    OCR Scan     		PDF 2SK2083 bx090

    2SK511

    Abstract: 296 mos fet ED44
    Text: bl E D 44<ìb2DS DG13073 OST « H I T 4 2SK511 H I T A C H I / OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING HIGH FREQUENCY POWER AMPLIFIER i n • FEATURES • Superior High Frequency Characteristics. • Low Input and Output Capacitance.


    OCR Scan     		PDF DG13073 2SK511 0D13G75 2SK511 296 mos fet ED44

    2SK2580

    Abstract: 2sk258 HITACHI 2SK* TO-3 vm200
    Text: b liE D M M T b E D S G 0 1 3 0 E 0 014 • H I T 4 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High Speed S w itc h in g . • H igh C u to ff Frequency. • E nhancem ent-M ode.


    OCR Scan     		PDF 44Tb2D5 G0130E0 2SK2580 2sk258 HITACHI 2SK* TO-3 vm200

    Untitled

    Abstract: No abstract text available
    Text: Transistors Switching 300V, 16A 2SK2739 • F e a tu re s •E x te r n a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area), 4) G ate-source voltage guaranteed at Vgss = ± 3 0 V 5) Easily designed drive circuits.


    OCR Scan     		PDF 2SK2739

    gutre

    Abstract: 2SK1449
    Text: Ordering n u m b e r:EN 3452 2SK1449 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON-state resistance. • Very high-speed switching. A bsolute M aximum Ratings at Ta = 25°C Drain to Source Voltage VdSS Gate to Source Voltage


    OCR Scan     		PDF EN3452 2SK1449 gutre

    2SJ32C

    Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
    Text: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		PDF 2SK19 2SK1923 T0-220 2SK1924 2SK2043LS 2SK2044LS O-220FI 2SK2045LS 2SK19; 2SK1922 2SJ32C 2SK14 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161

    2U 73 diode

    Abstract: No abstract text available
    Text: 73 HITACHI/-COPTOELECTRONICS} 449b2Ub H i I A U H 1 / COP f U h L E C T K U N 1 U S 2SK412 D e J M 4 cib5üS □ □ 1 0 0 5 1 7 73C 10059 ' D T - 3 ? “/3 - SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER • FEATURES


    OCR Scan     		PDF 449b2Ub 2SK412 2U 73 diode

    2SK2161

    Abstract: No abstract text available
    Text: Ordering num ber: EN 4601A 2SK2161 NO.4601A N-Channel MOS Silicon FET Very High-Speed Switching Applications I F eatu res • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Micaless package facilitating mounting. bsolute M axim um R atings at Ta = 25°C


    OCR Scan     		PDF EN4601A 2SK2161 2SK2161

    2SK1463

    Abstract: T03P 5s20 S 10 S T
    Text: Ordering number: EN 34 6 6 _ 2SK1463 N-Channel MOS Silicon FET Very High-Speed Sw itching A pplications F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute Maximum Ratings at T a= 25°C Drain to Source Voltage


    OCR Scan     		PDF EN3466 2SK1463 T03P 5s20 S 10 S T

    2SK1441

    Abstract: No abstract text available
    Text: O rd e rin g n u m b e r:E N 3444 No. 3444 _2SK144Ì N-Channel MOS Silicon FET Very High-Speed Switching Applications rFeatures etu u res • Low ON-state resistance. • Very high-speed switching. Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage


    OCR Scan     		PDF 2SK144Ã 10/iS, 2SK1441

    2SK1412

    Abstract: No abstract text available
    Text: Ordering number : EN 4228 _ 2SK1412 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F eatures - Low ON resistance, low input capacitance, very high-speed switching. • High reliability Adoption of HVP process . • Micaless package facilitating mounting.


    OCR Scan     		PDF 2SK1412 10//S,