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    P-CH MOSFET DEPLETION Search Results

    P-CH MOSFET DEPLETION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    P-CH MOSFET DEPLETION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: TRANSISTOR mos canal p HMA20 All in one TRANSISTOR REPLACEMENT GUIDE 4SR44 transistors mos mosfet canal p PX28 SK17 p channel de mosfet
    Text: MOSFET Analyser Model: HMA20 Operation E G AT RCE SO U AIN DR N EL HAN L N C ANNE P CH The HMA20 is an advanced Microcontrolled instrument that will quickly and easily analyse almost any enhancement mode MOSFET. With a press of the button, the Analyser will:


    Original     		PDF HMA20 HMA20 80x56x25mm TRANSISTOR REPLACEMENT GUIDE TRANSISTOR mos canal p All in one TRANSISTOR REPLACEMENT GUIDE 4SR44 transistors mos mosfet canal p PX28 SK17 p channel de mosfet

    IXTA02N100D2

    Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
    Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .


    Original     		PDF AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2

    10MQ100N

    Abstract: AN732 Si9121 Si9121DY
    Text: AN732 Vishay Siliconix Designing A High-Voltage Non-Isolated Buck-Boost Converter with the Si9121DY Nitin Kalje INTRODUCTION The Si9121DY is a non-isolated buck-boost converter IC, operating from a wide input voltage range of –10 to –60 V with minimal external components. This polarity inverter converts


    Original     		PDF AN732 Si9121DY Si9121 BAS21 Efficiency--Si9121-5 04-May-00 10MQ100N AN732

    igbt spice model

    Abstract: MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR
    Text: Power Semiconductor Application Note AN_PSM2e IEEE Industry Applications Society Annual Meeting New Orleans, Louisiana, October 5-9, 1997 Parameter Extraction Methodology and Validation for an Electro-Thermal Physics-Based NPT IGBT Model J. Sigg, P. Türkes, R. Kraus*


    Original     		PDF D-81739 D-85577 29July igbt spice model MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3

    SLUS452

    Abstract: bq24700 product preview bq24700
    Text: bq24700, bq24701 BATTERY CHARGE CONTROLLER AND SELECTOR WITH DPM ą SLUS452 – NOVEMBER 2000 D Dynamic Power Management, DPMt D D D D D D D ACDET ACPRES ACSEL BATDEP SRSET ACSET VREF ENABLE BATSET COMP ACN ACP 1 24 2 23 3 22 4 21 5 20 6 19 7 18 8 17 9 16


    Original     		PDF bq24700 bq24701 SLUS452 300-kHz 24-Pin SLUS452 bq24700 product preview

    AN211A

    Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


    Original     		PDF AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola

    MPF102 equivalent transistor

    Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
    Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or


    Original     		PDF AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET

    2N3797

    Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


    Original     		PDF AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information VDSS = 500 V = 20 A ID25 RDS on = 0.33 Ω IXTH 20N50D High Voltage MOSFET N-Channel, Depletion Mode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 20N50D O-247 flam00

    20N50D

    Abstract: 20n50
    Text: High Voltage MOSFET N-Channel, Depletion Mode VDSS = 500 V = 20 A ID25 RDS on = 0.33 Ω IXTH 20N50D IXTT 20N50D Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS


    Original     		PDF 20N50D O-247 O-268 20N50D 20n50

    MPF102 JFET

    Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory


    Original     		PDF AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet

    mosfet discrete totem pole drive CIRCUIT

    Abstract: analog switch circuit using mosfet 1mhz ultrasound transducer circuit driver HT04 VN3205N8 solid state switch ic 120v mosfet discrete totem pole CIRCUIT HT0440 HV2216 LND150N8
    Text: HT04 Series Application Note AN-D26 3 High Voltage Isolated MOSFET Driver high. The internal clock can be disabled by applying an external clock signal to the CLK pin. This allows the power dissipation and AC characteristics to be tailored to meet specific needs. The


    Original     		PDF AN-D26 HT0440 clo-83 TN2540N8 mosfet discrete totem pole drive CIRCUIT analog switch circuit using mosfet 1mhz ultrasound transducer circuit driver HT04 VN3205N8 solid state switch ic 120v mosfet discrete totem pole CIRCUIT HV2216 LND150N8

    HEXFET Power MOSFET designer manual

    Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
    Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different


    Original     		PDF

    bfr84

    Abstract: 71672 MSI MS-5 511 MOSFET
    Text: BFR84 J '-SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fieid-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m . tuners,


    OCR Scan     		PDF BFR84 bbS3131 7Z67774. bfr84 71672 MSI MS-5 511 MOSFET

    d150n

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Order Number / Package I dss BVdgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0m A LN D 150N 3 LN D 150N 8 LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.


    OCR Scan     		PDF LND150 O-243AA* OT-89. d150n

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R w w w .fa irc h ild s e m i.c o m tm RC5060 ACPI Switch Controller Features Applications • Implements ACPI control with PWROK, SLP_S3# and • Camino Platform ACPI Controller • Whitney Platform ACPI Controller SLP_S5# Description


    OCR Scan     		PDF RC5060 RC5060 DS30005057

    power MOSFET IRF740 driver circuit

    Abstract: h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF510 SEC mosfet transistor IRF520 FET IRF730
    Text: DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION T h is a p p lic a tio n n o te d is c u s s e s w h y a n d h o w M O S FET devices fail in sw itch -m o d e applications. It de als w ith th e issue o f ruggedness in the design o f the device, and w ith system design strategies tha t can


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131A - JULY 1996 Charge Pump Provides Negative Gate Bias for Depletion-Mode GaAs Power Amplifiers GATE_BIAS □ = 10 VCC C1c i+ BATTJN BATTJN BATTJN PGP PG GND 2 3 4 5 6 7 8 9 10 135-mli High-Side Switch Controls Supply


    OCR Scan     		PDF TPS9103 SLVS131A 135-mli 20-Pln 10-ki2 TPS9103

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    Untitled

    Abstract: No abstract text available
    Text: USH5155; USH5156 ISOPOWER HIGH VOLTAGE Universal Semiconductor FEATURES • • • • • • 5 0 0 V Devices D ielectrically isolated Silicon gate C M O S/D M O S te ch n o lo g y Freedom fro m latch-up Ultra Low leakage Rad-Hard devices DESCRIPTION The U S H 5155 and U S H 5 1 5 6 are high voltage K it Parts de­


    OCR Scan     		PDF USH5155; USH5156 USH5155 3bfl341

    1rf820

    Abstract: LEM LT 308 N-Channel Depletion-Mode MOSFET high voltage S2000A
    Text: Tem ic AN707 S e m i c o n d u c t o r s Designing Low-Power Off-Line Flyback Converters Using the Si9120 Switchmode Controller IC by C ra ig V arga G e ttin g high efficien cy fro m lo w -p o w er o ff-lin e p o w er supplies has alw ay s p o sed d ifficulties fo r the d esign


    OCR Scan     		PDF AN707 Si9120 J40401TC 1RF820 2N7000 LEM LT 308 N-Channel Depletion-Mode MOSFET high voltage S2000A

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    mosfet K 2865

    Abstract: BF1107 ic sc 6200 passive loopthrough
    Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification


    OCR Scan     		PDF BF1107 115102/00/01/pp8 mosfet K 2865 BF1107 ic sc 6200 passive loopthrough