ci 4
Abstract: Laser Diode 10 pin iC-WKP
Text: iC-WKP 15 V P-TYPE CW LASER DIODE DRIVER iC-WKP is a driver for laser diodes in continuous wave operation with laser currents of up to 350 mA which requires only four external components. The driver is optimised for use with P-type laser diodes and allows the connection of the laser
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Abstract: No abstract text available
Text: CS658050S5-N/M/P 660 nm Laser Diode 650nm Compact Laser Diode Modules Key features Visible light λ = 660 nm Output powers = 50 mW Package type = 5.6 mmΦ High reliability Applications Laser Pointer & General Purpose Red Laser Light Source Laser Module & High Precison Engineering Instruments
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CS658050S5-N/M/P
650nm
CS658050S5-NMP
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EP-603 power supply
Abstract: EP-603 power supply circuit diagram
Text: ar y n i im prel iC-NZP P-TYPE LASER DIODE DRIVER Rev A1, Page 1 FEATURES APPLICATIONS ♦ Peak value controlled laser driver for operation from CW up to 155 MHz ♦ Spike-free switching of laser currents of up to 300 mA ♦ Setting of laser power APC via external resistor
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QFN24
QFN24
EP-603 power supply
EP-603 power supply circuit diagram
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MD 202
Abstract: laser diode driver laser diode Laser Diode 10 pin laser diode driver 200 mhz PULSED LASER DIODE DRIVER G003 G008 capacitor cf 502 HL6342G
Text: ar y n i im prel iC-NZP P-TYPE LASER DIODE DRIVER Rev A1, Page 1/13 FEATURES APPLICATIONS ♦ Peak value controlled laser driver for operation from CW up to 155 MHz ♦ Spike-free switching of laser currents of up to 300 mA ♦ Setting of laser power APC via external resistor
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QFN24
QFN24
D-55294
MD 202
laser diode driver
laser diode
Laser Diode 10 pin
laser diode driver 200 mhz
PULSED LASER DIODE DRIVER
G003
G008
capacitor cf 502
HL6342G
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G003
Abstract: G008 laser driver TTL circuits
Text: ar y n i im prel iC-NZP P-TYPE LASER DIODE DRIVER Rev B1, Page 1/15 FEATURES APPLICATIONS ♦ Peak value controlled laser driver for operation from CW up to 155 MHz ♦ Spike-free switching of laser currents of up to 300 mA ♦ Setting of laser power APC via external resistor
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QFN24
QFN24
D-55294
G003
G008
laser driver TTL circuits
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smd 402
Abstract: laser diodes drive circuits
Text: iC-WKP 15 V CW P-TYPE LASER DIODE DRIVER Rev A5, Page 1/8 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Optimised for P-type laser diodes case grounded CW operation up to 350 mA from 3 to 15 V supply voltage Rapid soft start after power-on
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DFN10
DFN10
smd 402
laser diodes drive circuits
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IC-WKP DFN10
Abstract: DFN10 G003 G008 uf007
Text: iC-WKP 15 V CW P-TYPE LASER DIODE DRIVER ar y n i im prel Rev A4, Page 1/8 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Optimised for P-type laser diodes case grounded CW operation up to 350 mA from 3 to 15 V supply voltage
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DFN10
DFN10
D-55294
IC-WKP DFN10
G003
G008
uf007
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103 capacitor
Abstract: IC-WKP DFN10
Text: iC-WKP 15 V CW P-TYPE LASER DIODE DRIVER Rev A5, Page 1/8 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Optimised for P-type laser diodes case grounded CW operation up to 350 mA from 3 to 15 V supply voltage Rapid soft start after power-on
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DFN10
DFN10
D-55294
103 capacitor
IC-WKP DFN10
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mda 2010
Abstract: iC-WKP SCHEMATIC mda monitor laser diode laser diode symbol schematic DFN10 G003 G008 smd diode code a6 SO8-TP
Text: iC-WKP 15 V CW P-TYPE LASER DIODE DRIVER Rev A6, Page 1/10 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Optimised for P-type laser diodes case grounded CW operation up to 350 mA from 3 to 15 V supply voltage Rapid soft start after power-on
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DFN10
DFN10
D-55294
mda 2010
iC-WKP
SCHEMATIC mda monitor
laser diode
laser diode symbol schematic
G003
G008
smd diode code a6
SO8-TP
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laser diode for rw drive
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES t n e m p elo v e D r Unde inary TYPE NAME ML6XX24 SERIES FOR OPTICAL INFORMATION SYSTEMS m i l e r P ML60124R, ML601J24 FEATURES DESCRIPTION ML6XX24 is a high power AlGaAs semiconductor laser which provides a stable, single transverse mode oscillation with
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ML6XX24
ML60124R,
ML601J24
785nm
ML60124R
ML60124R
laser diode for rw drive
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2 Wavelength Laser Diode
Abstract: Opto Diode opto laser laser diode chip DIODE CHIP
Text: AlGaInP/GaAs Laser Diode Chip ▓ LI650C Scope : This specification applies to AlGaInP/GaAs Laser Diode Chip. ▓ Structure : 1 Edge emitting type 2) Narrow stripe 3) Index guided quantum well 4) P anode) side: gold alloy N (cathode) side: gold alloy ▓
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LI650C
2 Wavelength Laser Diode
Opto Diode
opto laser
laser diode chip
DIODE CHIP
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SPL785-40-105M-PD
Abstract: No abstract text available
Text: SPL785-40-105M-PD TECHNICAL DATA Pigtailed Coaxial Laser Diode Features Applications • • • • • • 785 nm MM Fiber Coaxial package Built-in PD Medical laser treatment Printing Electrical Connection Pin Configuration Bottom View p-type PIN 1 2 3 Function
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SPL785-40-105M-PD
SLP785-40-105M-PD
SPL785-40-105M-PD
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SPL785-20-4-PD
Abstract: No abstract text available
Text: SPL785-20-4-PD TECHNICAL DATA Pigtailed Coaxial Laser Diode Features Applications • • • • • • 785 nm SM Fiber Coaxial package Built-in PD Medical laser treatment Printing Electrical Connection Pin Configuration Bottom View p-type PIN 1 2 3 Function
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SPL785-20-4-PD
SPL785-20-4-PD
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SPL785-30-4-PD
Abstract: No abstract text available
Text: SPL785-30-4-PD TECHNICAL DATA Pigtailed Coaxial Laser Diode Features Applications • • • • • • 785 nm SM Fiber Coaxial package Built-in PD Medical laser treatment Printing Electrical Connection Pin Configuration Bottom View p-type PIN 1 2 3 Function
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SPL785-30-4-PD
SLP785-30-4-PD
SPL785-30-4-PD
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OL3301N-05
Abstract: PEDF3301N-05-01 STM-16
Text: PEDF3301N-05-01 1Electronic Components OL3301N-05 This version: Nov. 2000 1310 nm/0.5 mW SMT Laser Diode Module with Single Mode Fiber GENERAL DESCRIPTION The OL3301N-05 surface mount type LD module is a 1.3µm, InGaAsP/InP F-P laser diode coupled to a single
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PEDF3301N-05-01
OL3301N-05
OL3301N-05
STM-16
PEDF3301N-05-01
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M 6 6 5 1 O P /F P LASER-DIODE DRIVER DESCRIPTION The M66510 is a semiconductor laser diode driver that drives a semiconductor laser of the type whose cathode and the anode of monitor photodiode are connected to the stem. Laser driving current of up to 120mA can be set by applying
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M66510
120mA
b24Tfl2b
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML9XX8 SERIES In G a A s P -M Q W HIGH POWER LASER DIODES TYPE NAME FEATURES DESCRIPTION ML9XX8 series are InGaAsP high power laser diodes which provides a stable, single emission wavelength of transverse 1480nm mode and oscillation
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1480nm
150mW)
150mW.
100mW
ML961B8S
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES l3 ML7XX12 SERIES ecV'cat'00 • s o ^ p ^ 6' "1'"" InGaAsP - M Q W - F P LASER DIODE ARRAYS TYPE NAME FEATURES DESCRIPTION ML7XX12 p ro vid e s series 12beam s are InGaAsP w ith sta b le , arrays which • l3 1 0 n m typical emission wavelength
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ML7XX12
ML7XX12
12beam
1310nm
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML9XX12 SERIES In G a A s P -M Q W -D F B LASER DIODES TYPE NAME FEATURES DESCRIPTION ML9XX12 series are M Q W *—DFB” laser diodes emitting • W e ll suitable for 2.5Gb/s digital transmission with 1 .3 /im normal fiber 100km light beam around 1550nm.
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ML9XX12
100km
1550nm.
ML99212
200psec/div
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML6XX16 SERIES AIGaAs LASER DIODES TYPE NAME DISCRIPTION FEATURES M L6X X 16 serie s are high p o w e r A IG aA s s e m ico ndu ctor laser • O u t p u t 30 m W CW 4 0 m W (pulse) d io d e s • S h o r t astig m atic distance w h ic h
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ML6XX16
785nm
L6XX16
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L1016R
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML1XX6 SERIES AIGaLnP LASER DIODES TYPE NAME DESCRIPTION FEATURES M L1X X6 is a high po w e r A IG alnP sem ico ndu ctor # laser w hich provides a stable, sin g le tra nsverse m ode # V isible La ser 658nm typ. High P ow er 30m W (C W )
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658nm
658nm
ML1016R)
L1016R
L1016R
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML4XX23 SERIES AIGaAs LASER DIODES TYPE NAME FEATURES DISCRIPTION M L4X X 23 is a AIG aA s laser diod es w hich p rovides a stable, •L o w single • S m a ll astig m atic distance tra nsverse m ode o scillatio n w ith em ission w avelength
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ML4XX23
780nm
L4XX23
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B85 diode
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES p ML7XX12 SERIES ect'cai100 M o \c e 'n ûU,c l\rf\^s ar soroepararn InGaAsP - M Q W - F P LASER DIODE ARRAYS TYPE NAME FEATURES DESCRIPTION M L 7X X 1 2 s e rie s are InG aA sP p ro v id e s 12beam s w ith oscillation o f em ission
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cai100
ML7XX12
12beam
1310nm
B85 diode
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ML7XX12
Abstract: optical CW LASER ingaasp
Text: MITSUBISHI LASER DIODES ML7XX12 SERIES e c V ic a ^ 0 0 , M0\ce 'n,5> ^r\c\\mrtsa so^p«ameW InGaAsP - M Q W - F P LASER DIODE ARRAYS TYPE NAME FEATURES DESCRIPTION ML7XX12 p ro vid e s series 12beam s are InGaAsP w ith stable, arrays which • l3 1 0 n m typical emission wavelength
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ML7XX12
12beams
1310nm
l310nm
optical CW LASER
ingaasp
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