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    P CHANNEL ULTRA LOW GATE CHARGE Search Results

    P CHANNEL ULTRA LOW GATE CHARGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL ULTRA LOW GATE CHARGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF5820

    Abstract: SI3443DV IRF5800 IRF5850
    Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF 3947A IRF5850 IRF5850 OT-23 IRF5820 SI3443DV IRF5800

    IRF5850

    Abstract: No abstract text available
    Text: PD - 93947 IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF IRF5850 IRF5850 OT-23 i252-7105

    Untitled

    Abstract: No abstract text available
    Text: Sept 2004 AO4425, AO4425L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4425 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable


    Original     		PDF AO4425, AO4425L AO4425

    IRF5805

    Abstract: SI3443DV TSOP6 Marking Code 17 IRF5820
    Text: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF -94029A IRF5805 OT-23. spac252-7105 IRF5805 SI3443DV TSOP6 Marking Code 17 IRF5820

    Untitled

    Abstract: No abstract text available
    Text: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.0A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF -94029A IRF5805 OT-23.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95503B IRF5804PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing


    Original     		PDF 95503B IRF5804PbF

    power MOSFET IRF data

    Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
    Text: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF IRF5850PbF IRF5850 power MOSFET IRF data IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5852 mosfet irf p-channel irf 2010

    Untitled

    Abstract: No abstract text available
    Text: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing


    Original     		PDF PD-95262B IRF5803PbF

    IRF5805

    Abstract: marking bad sot-23 IRF580
    Text: PD -94029 IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier


    Original     		PDF IRF5805 OT-23. space52-7105 IRF5805 marking bad sot-23 IRF580

    Untitled

    Abstract: No abstract text available
    Text: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description D These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing


    Original     		PDF PD-95262B IRF5803PbF

    Untitled

    Abstract: No abstract text available
    Text: AON7401 30V P-Channel MOSFET General Description Product Summary The AON7401 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AON7401 AON7401

    Untitled

    Abstract: No abstract text available
    Text: Rev 3: Nov 2004 AO4413, AO4413L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable


    Original     		PDF AO4413, AO4413L AO4413

    AO4413

    Abstract: No abstract text available
    Text: AO4413 30V P-Channel MOSFET General Description Product Summary The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4413 AO4413

    AO4407L

    Abstract: No abstract text available
    Text: AO4407L 30V P-Channel MOSFET General Description Features The AO4407L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4407L AO4407L

    Untitled

    Abstract: No abstract text available
    Text: AON7403 30V P-Channel MOSFET General Description Product Summary The AON7403 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AON7403 AON7403

    AON7401

    Abstract: No abstract text available
    Text: AON7401 30V P-Channel MOSFET General Description Features The AON7401 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AON7401 AON7401

    30V P-Channel MOSFET

    Abstract: No abstract text available
    Text: AON7403 30V P-Channel MOSFET General Description Features The AON7403 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AON7403 AON7403 30V P-Channel MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Rev 3: August 2004 AO4423, AO4423L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4423 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable


    Original     		PDF AO4423, AO4423L AO4423

    AO4423

    Abstract: No abstract text available
    Text: AO4423 30V P-Channel MOSFET General Description Product Summary The AO4423 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4423 AO4423

    Untitled

    Abstract: No abstract text available
    Text: AON7401 30V P-Channel MOSFET General Description Product Summary The AON7401 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AON7401 AON7401

    Untitled

    Abstract: No abstract text available
    Text: ACE7401B P-Channel Enhancement Mode Field Effect Transistor Description The ACE7401B uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF ACE7401B ACE7401B

    AO4435

    Abstract: E1-0100
    Text: AO4435 30V P-Channel MOSFET General Description Product Summary The AO4435 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4435 AO4435 -AO4435 E1-0100

    AON7403

    Abstract: No abstract text available
    Text: AON7403 30V P-Channel MOSFET General Description Features The AON7403 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AON7403 AON7403

    IRF9952

    Abstract: No abstract text available
    Text: PD - 9.1561 A International IG R Rectifier IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated N-CHANNEL M ÜSF ET


    OCR Scan     		PDF IRF9952 IRF7309 IRF7509 IRF9952