FDMJ1032C
Abstract: marking 032 SC-75 Dual N & P-Channel
Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement
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FDMJ1032C
FDMJ1032C
marking 032
SC-75
Dual N & P-Channel
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MCH6644
Abstract: marking WU
Text: MCH6644 Ordering number : ENN8959 N-Channel and P-Channel Silicon MOSFETs MCH6644 General-Purpose Switching Device Applications Features • • • • The MCH6644 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density mounting.
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MCH6644
ENN8959
MCH6644
marking WU
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CPH3309
Abstract: CPH5835 MCH5835 SBS010M
Text: CPH5835 Ordering number : ENN8207 CPH5835 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET CPH3309 and a Schottky Barrier Diode (SBS010M) contained
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CPH5835
ENN8207
CPH3309)
SBS010M)
CPH3309
CPH5835
MCH5835
SBS010M
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CPH5802
Abstract: No abstract text available
Text: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)
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OCR Scan
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ENN6899
CPH5802
CH3306)
SBS004)
CPH5802]
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ENN8206
Abstract: CPH5810 MCH3312
Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)
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CPH5810
ENN8206
MCH3312)
SBS001)
ENN8206
CPH5810
MCH3312
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305G-AE2-R
UT2305G-AE3-R
UT2305G-AG3-R
OT-23-3
OT-23
OT-26
OT-23
QW-R502-133
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
UT2305L-AG3-R
UT2305G-AG3-R
OT-23-3
OT-23
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EMH2603
Abstract: No abstract text available
Text: EMH2603 Ordering number : ENA0657 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2603 General-Purpose Switching Device Applications Features • • • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2603
ENA0657
EMH2603
A0657-7/7
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EMH2601
Abstract: EN8731 it10408
Text: EMH2601 Ordering number : EN8731 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2601 General-Purpose Switching Device Applications Features • • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2601
EN8731
EMH2601
EN8731
it10408
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a1358
Abstract: ECH8660
Text: ECH8660 Ordering number : ENA1358 SANYO Semiconductors DATA SHEET ECH8660 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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ECH8660
ENA1358
ECH8660
PW10s,
A1358-6/6
a1358
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ECH8620
Abstract: No abstract text available
Text: ECH8620 Ordering number : ENA0659 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8620 General-Purpose Switching Device Applications Features • • The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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ECH8620
ENA0659
ECH8620
A0659-6/6
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EMH2602
Abstract: No abstract text available
Text: EMH2602 Ordering number : EN8732A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2602
EN8732A
EMH2602
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Untitled
Abstract: No abstract text available
Text: ECH8660 Ordering number : ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8660 General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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ECH8660
ENA1358B
ECH8660
A1358-8/8
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Untitled
Abstract: No abstract text available
Text: VEC2611 VEC2611 Ordering number : ENA0425 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.
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VEC2611
ENA0425
VEC2611
900mm2â
VEC2611/D
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CPH5807
Abstract: MCH3309 SBS004
Text: CPH5807 Ordering number : EN7751B CPH5807 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a P-Channel Silicon MOSFET MCH3309 and a Schottky Barrier Diode (SBS004) contained in
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CPH5807
EN7751B
MCH3309)
SBS004)
CPH5807
MCH3309
SBS004
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7382
Abstract: CPH5820 D2503 MCH3308 SBS006M
Text: Ordering number : ENN7382 CPH5820 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5820 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2171
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ENN7382
CPH5820
MCH3308)
SBS006M)
CPH5820]
7382
CPH5820
D2503
MCH3308
SBS006M
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ECH8619
Abstract: ech8 sanyo
Text: ECH8619 Ordering number : ENA0658 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8619 General-Purpose Switching Device Applications Features • • The ECH8619 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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ECH8619
ENA0658
ECH8619
A0658-6/6
ech8 sanyo
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IC rl46
Abstract: VEC2611
Text: VEC2611 Ordering number : ENA0425 SANYO Semiconductors DATA SHEET VEC2611 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
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VEC2611
ENA0425
VEC2611
900mm.
A0425-6/6
IC rl46
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171
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ENN6980
CPH5804
MCH3312)
SBS006M)
CPH5804]
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TA-3176
Abstract: marking QB MCH3308 MCH5802 SBS006M
Text: Ordering number : ENN6961 MCH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2195
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ENN6961
MCH5802
MCH3308)
SBS006M)
MCH5802]
TA-3176
marking QB
MCH3308
MCH5802
SBS006M
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TA 8403 A
Abstract: w507 FW507 MCH3312 SB1003M
Text: FW507 Ordering number : ENN8403 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW507 General-Purpose Switching Device Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and
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FW507
ENN8403
FW507
MCH3312
SB1003M
TA 8403 A
w507
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CPH5807
Abstract: MCH3309 SBS004
Text: CPH5807 Ordering number : ENN7751 CPH5807 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a P-Channel Silicon MOSFET MCH3309 and a Schottky Barrier Diode (SBS004) contained in
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CPH5807
ENN7751
MCH3309)
SBS004)
CPH5807
MCH3309
SBS004
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MCH3312
Abstract: CPH5854 SB1003M3 A05166 marking YG
Text: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),
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CPH5854
ENA0516
MCH3312)
SB1003M3)
A0516-6/6
MCH3312
CPH5854
SB1003M3
A05166
marking YG
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a2165
Abstract: No abstract text available
Text: MCH5839 Ordering number : ENA2165 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5839 General-Purpose Switching Device Applications Features • • • • Composite type with an P-channel silicon MOSFET and a schottky barrier diode
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ENA2165
MCH5839
A2165-7/7
a2165
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