Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P CHANNEL MOSFET 100V Search Results

    P CHANNEL MOSFET 100V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    RBA250N10CHPF-4UA02#GB0 Renesas Electronics Corporation 100V - 250A - N-channel Power MOS FET, MP-25ZU, /Embossed Tape Visit Renesas Electronics Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL MOSFET 100V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF95

    Abstract: IRF9510 p channel mosfet 100v TA17541
    Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET


    Original
    PDF IRF95 O220AB IRF9510 IRF95 IRF9510 p channel mosfet 100v TA17541

    P-channel N-Channel power mosfet SO-8

    Abstract: IRF7350PBF IRF7350
    Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V


    Original
    PDF IRF7350PbF -100V EIA-481 EIA-541. P-channel N-Channel power mosfet SO-8 IRF7350PBF IRF7350

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF9530 Preliminary POWER MOSFET -14A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF9530 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original
    PDF UF9530 -100V UF9530 -100V, UF9530L-TA3-T UF9530G-TA3-T UF9530L-TM3-T UF9530G-TM3-T UF9530L-TN3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state


    Original
    PDF UTT12P10 UTT12P10 UTT12P10L-TM3-T UTT12P10G-TM3-T UTT12P10L-TN3-R UTT12P10G-TN3-R O-251 O-252 QW-R502-722

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original
    PDF UF5210 -100V UF5210 O-220 UF5210L-TA3-T UF5210G-TA3-T QW-R502-845

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF9520S Preliminary POWER MOSFET -6.8A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9520S is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original
    PDF UF9520S -100V UF9520S O-220F1 UF9520SL-TF1-T UF9520SG-TF1-T QW-R502-892

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original
    PDF UT23P09 -100V UT23P09 UT23P09L-TA3-T UT23P09G-TA3-T O-220 QW-R502-844

    UTT70P10

    Abstract: UTC 225
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT70P10 Power MOSFET 70A, 100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT70P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also


    Original
    PDF UTT70P10 UTT70P10 O-220 UTT70P10L-TA3-T UTT70P10G-TA3-T QW-R502-725 UTC 225

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can


    Original
    PDF UTT18P10 UTT18P10 UTT18P10L-TN3-R UTT18P10G-TN3-R UTT18P10L-TA3-T UTT18P10G-TA3-T O-252 O-220 QW-R502-619

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P10 Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also


    Original
    PDF UTT50P10 -100V UTT50P10 -100V UTT50P10L-TA3-T UTT50P10G-TA3-T O-220 QW-R502-607

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can


    Original
    PDF UTT12P10 UTT12P10 UTT12P10L-TM3-T UTT12P10G-TM3-T UTT12P10L-TN3-T UTT12P10G-TN3-T UTT12P10L-TN3-R UTT12P10G-TN3-R QW-R502-722

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original
    PDF TC2320 -200V TC2320TG TC2320TG inherent00mA

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original
    PDF TC2320 -200V TC2320TG TC2320TG i00mA

    TC2320TG

    Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original
    PDF TC2320 -200V TC2320TG TC2320TG -200mA ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT16P10 Power MOSFET 100V, 16A P-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT16P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can


    Original
    PDF UTT16P10 UTT16P10 O-252 UTT16P10L-TN3-R UTT16P10G-TN3-R UTT16P10L-TN3-T UTT16P10G-TN3-T QW-R502-748

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


    Original
    PDF UTT25P10 UTT25P10 UTT25P10L-TA3-T UTT25P10G-TA3-T UTT25P10L-TN3-T UTT25P10G-TN3-T UTT25P10L-Tat QW-R502-597

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


    Original
    PDF UTT25P10 UTT25P10 UTT25P10L-TA3-T UTT25P10G-TA3-T UTT25P10L-TN3-T UTT25P10G-TN3-T UTT25P10L-TN3-R UTT25P10G-TN3-R QW-R502-597

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can


    Original
    PDF UTT12P10 UTT12P10 O-252 UTT12P10L-TN3-R UTT12P10G-TN3-R QW-R502-722

    W360

    Abstract: FW360
    Text: Ordering number : ENN7556 FW360 N-Channel and P-Channel Silicon MOSFETs FW360 Ultrahigh-Speed Switching, Motor Driver Applications Preliminary Features • The FW360 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129


    Original
    PDF ENN7556 FW360 FW360 FW360] W360

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT18P10 Power MOSFET 100V, 19A P-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT18P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can


    Original
    PDF UTT18P10 UTT18P10 O-252 UTT18P10L-TN3-R UTT18P10G-TN3-R QW-R502-619

    ECH8620

    Abstract: No abstract text available
    Text: ECH8620 Ordering number : ENA0659 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8620 General-Purpose Switching Device Applications Features • • The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


    Original
    PDF ECH8620 ENA0659 ECH8620 A0659-6/6

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UFR9120 Preliminary Power MOSFET P CHANNEL POWER MOSFET „ DESCRIPTION The UTC UFR9120 is a P-channel power MOSFET using UTC’s advanced processing technology to provide customers a minimum on-state resistance and high switching speed


    Original
    PDF UFR9120 UFR9120 UFR9120L-TN3-R UFR9120G-TN3-R UFR9120L-TN3-T UFR9120G-TN3-T O-252 QW-R502-570

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET -25A, -100V, 0.150 Ω, P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


    Original
    PDF UTT25P10 -100V, UTT25P10 -100V UTT25P10L-TA3-T UTT25P10G-TA3-T QW-502-597

    Untitled

    Abstract: No abstract text available
    Text: IRF9510 Semiconductor Data Sheet April 1999 -3.0A, -100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancem ent mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of


    OCR Scan
    PDF IRF9510 -100V, O-220AB -100V