NF925
Abstract: ISOPLUS247
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR32P60P VDSS ID25 RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600
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IXTR32P60P
ISOPLUS247
E153432
100ms
32P60P
NF925
ISOPLUS247
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ISOPLUS247
Abstract: 16P60P
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR16P60P VDSS ID25 RDS on = - 600V = - 10A ≤ 790mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600
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IXTR16P60P
ISOPLUS247
E153432
100ms,
16P60P
ISOPLUS247
16P60P
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IXTK32P60P
Abstract: IXTX32P60P PLUS247 NF925
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTK32P60P IXTX32P60P VDSS ID25 = = ≤ RDS on - 600V - 32A Ω 350mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V
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IXTK32P60P
IXTX32P60P
O-264
120/rating
100ms
32P60P
IXTK32P60P
IXTX32P60P
PLUS247
NF925
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTN32P60P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings
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IXTN32P60P
OT-227
E153432
2500ias
100ms
32P60P
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IR2110 application note
Abstract: IR2113 APPLICATION NOTE circuit to ir2113 IR2113 ir2110 circuit DIAGRAM IR2113 APPLICATION mosfet 600V 10A logic level note application IR2113 ir2113s ir2110 application
Text: Data Sheet No. PD60147-P IR2110/IR2113 S HIGH AND LOW SIDE DRIVER Features • • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune
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PD60147-P
IR2110/IR2113
IR2110)
IR2113)
IR2110S/IR2113S
IRFPE50)
14-Lead
MS-001AC)
16-Lead
IR2110 application note
IR2113 APPLICATION NOTE
circuit to ir2113
IR2113
ir2110 circuit DIAGRAM
IR2113 APPLICATION
mosfet 600V 10A logic level
note application IR2113
ir2113s
ir2110 application
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IR2110 application note
Abstract: IR2113 APPLICATION NOTE circuit to ir2113 ir2110 IR2113 APPLICATION IR2113 IR2110 design IRFBC20 IRFBC30 IRFBC40
Text: Data Sheet No. PD60147-P IR2110/IR2113 S HIGH AND LOW SIDE DRIVER Features • • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune
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PD60147-P
IR2110/IR2113
IR2110)
IR2113)
IR2110S/IR2113S
IRFPE50)
14-Lead
MS-001AC)
16-Lead
IR2110 application note
IR2113 APPLICATION NOTE
circuit to ir2113
ir2110
IR2113 APPLICATION
IR2113
IR2110 design
IRFBC20
IRFBC30
IRFBC40
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Untitled
Abstract: No abstract text available
Text: STGD6NC60H N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C <2.5V 7A ) s ( t c u d o ) r s ( P t c e Description t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t b c u O d
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STGD6NC60H
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P-Channel MOSFET 600v
Abstract: ISOPLUS247 nf 931 diode 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Text: IXTR32P60P PolarPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 ( E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR32P60P
ISOPLUS247
E153432
100ms
32P60P
3-25-09-D
P-Channel MOSFET 600v
ISOPLUS247
nf 931 diode
600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Untitled
Abstract: No abstract text available
Text: PolarPTM Power MOSFET VDSS ID25 IXTR32P60P RDS on = = ≤ - 600V - 18A Ω 385mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 ( E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTR32P60P
ISOPLUS247
E153432
100ms
32P60P
3-25-09-D
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IR2131
Abstract: No abstract text available
Text: Data Sheet No. PD60032 rev P IR2131 J (S) & (PbF) Features 3 HIGH SIDE AND 3 LOW SIDE DRIVER • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
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PD60032
IR2131
28-Lead
44-Lead
IR2131
IR2131S
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P-Channel MOSFET 600v
Abstract: 16P60P ISOPLUS247
Text: PolarPTM Power MOSFET IXTR16P60P VDSS ID25 RDS on = - 600V = - 10A ≤ 790mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 600
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IXTR16P60P
ISOPLUS247
E153432
100ms,
16P60P
P-Channel MOSFET 600v
16P60P
ISOPLUS247
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note application IR2131
Abstract: IR2131 IR2131S IR2131SPbF IR2131J IRF450 IRF820 IRF830 IRF840 IR2131 APPLICATION NOTE
Text: Data Sheet No. PD60032 rev P IR2131 J (S) & (PbF) Features 3 HIGH SIDE AND 3 LOW SIDE DRIVER • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
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PD60032
IR2131
28-Lead
44-Lead
IR2131
IR2131S
note application IR2131
IR2131S
IR2131SPbF
IR2131J
IRF450
IRF820
IRF830
IRF840
IR2131 APPLICATION NOTE
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Untitled
Abstract: No abstract text available
Text: PolarPTM Power MOSFET VDSS ID25 IXTR16P60P RDS on = - 600V = - 10A ≤ Ω 790mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 600
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IXTR16P60P
ISOPLUS247
E153432
100ms,
16P60P
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IR2133
Abstract: ir2233j application IR2133J IR2233 PD60107-P
Text: Data Sheet No. PD60107-P IR2133 5 (J&S) IR2233(5) (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune
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PD60107-P
IR2133
IR2233
0V/12V
IR2233J
IRG4PH50KD)
IR2133J
IRG4ZH71KD)
28-Lead
MS-011AB)
ir2233j application
PD60107-P
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application note ir2233j
Abstract: IR2133 application note IR2133 application notes ir2233j application
Text: Data Sheet No. PD60107-P IR2133/IR2135 J&S IR2233/IR2235 (J&S) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune
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PD60107-P
IR2133/IR2135
IR2233/IR2235
0V/12V
IR2133IR2135/IR2233I1E
IR2233J
IRG4PH50KD)
IR2133J
IRG4ZH71KD)
28-Lead
application note ir2233j
IR2133 application note
IR2133 application notes
ir2233j application
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IR2109 application note
Abstract: halfbridge design ir2109 IR21094 PD60163-P IR2109 IR21094S IR2109S MS-012AA IR21091
Text: Data Sheet No. PD60163-P IR2109 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V
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PD60163-P
IR2109
540ns
IR21094)
IR2109 application note
halfbridge design ir2109
IR21094
PD60163-P
IR21094S
IR2109S
MS-012AA
IR21091
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Untitled
Abstract: No abstract text available
Text: HGTA32N60E2 ¡3 H " « » 32A, 600V N-Channel IGBT A p r il 1 9 9 5 Package Features • 32A.600V JEDEC MQ-093AA 5 LEAD TO-218 • Latch Free Operation • Typical Fall Time 620ns • High Input Impedance • Low Conduction Loss Description The I G B T is a M O S
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HGTA32N60E2
MQ-093AA
O-218)
620ns
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24N60D1D
Abstract: 24N60D 24n60d1 620 tg diode
Text: f f l M A R R f â H G T G 2 N 4 6 D D 1 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode A p rii 19 9 5 Features Package JEDEC STYLE TO-247 • 24A .600V EMITTER • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode
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O-247
500ns
24N60D1D
24N60D
24n60d1
620 tg diode
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Untitled
Abstract: No abstract text available
Text: A D VA NC ED POIilER TECHNOLOGY b lE □257^0^ D DQDGÔ74 4*i7 *A V P A dvanced P o w er Te c h n o l o g y APT30GF60BN 600V 30A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol
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APT30GF60BN
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Untitled
Abstract: No abstract text available
Text: ADVANCED POÜIER TECHNOLOGY □ SSTIGT G000fl7fl 03S « A V P blE D A dvanced P o w er Te c h n o l o g y * APT45GF60BN 600V 45A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol V CES
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G000fl7fl
APT45GF60BN
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APT35GL60BN
Abstract: THYRISTOR 35A 300V
Text: ADVANCED POWER TECHNOLOGY blE 0257^0*! D 0000Ô50 A T53 « A V P d v a n c e d P ow er Technology APT35GL60BN 600V 35A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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TECHN0L06Y
APT35GL60BN
THYRISTOR 35A 300V
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY blE D Bi QSSTIQT 0000Ô56 244 B A V P • R A d v a n ced F M P o w er Te c h n o l o g y APT75GL60BN 600V 75A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS
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APT75GL60BN
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Untitled
Abstract: No abstract text available
Text: STGP7NB60HD STGP7NB60HDFP N-CHANNEL 7A - 600V - TO-220/FP PowerMESH IGBT TYPE STG P7NB60HD STG P7N B60H D FP V ces VcE sat lc 600 V 600 V < 2 .8 V < 2 .8 V 7 A 7 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . LOW O N -VO LTA G E DR O P (Vcesat) . . . . .
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STGP7NB60HD
STGP7NB60HDFP
O-220/FP
P7NB60HD
STGP7NB60HD/FP
O-22QFP
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STGB7NB60HD
Abstract: No abstract text available
Text: STGB7NB60HD N-CHANNEL 7 A - 600V - DPAK PowerMESH IGBT TYPE S TG B7NB60HD V CES V c E s a t lc 600 V < 2.8 V 7 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . LOW O N -VO LTA G E DR O P (Vcesat) . . . . . LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION
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STGB7NB60HD
B7NB60HD
O-263)
GC7B950
O-263
STGB7NB60HD
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