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    P CHANNEL 50A IGBT Search Results

    P CHANNEL 50A IGBT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL 50A IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXTH50P10 IXTT50P10 Standard Power MOSFET = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 50A Ω 55mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH50P10 IXTT50P10 O-247 O-268 50P10 3-08-A

    IXTH50P10

    Abstract: P-CHANNEL 25A TO-247 POWER MOSFET IXTT50P10 50P10
    Text: Standard Power MOSFET IXTH50P10 IXTT50P10 VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 50A Ω 55mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH50P10 IXTT50P10 O-247 50P10 3-08-A IXTH50P10 P-CHANNEL 25A TO-247 POWER MOSFET IXTT50P10

    P channel 50A IGBT

    Abstract: isolated voltage sensor 1mhz diode bridge BY 26 CV MSK4351 IGBT 500V 50A use igbt for 3 phase induction motor Bv 42 transistor
    Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge


    Original     		PDF MIL-PRF-38534 20KHz MIL-PRF-38535 MIL-PRF-38534) 1000G P channel 50A IGBT isolated voltage sensor 1mhz diode bridge BY 26 CV MSK4351 IGBT 500V 50A use igbt for 3 phase induction motor Bv 42 transistor

    APT50GF100BN

    Abstract: 780L
    Text: ADVANCED POWER TECHNOLOGY LIE D • DeSTIGT OOOOflm 2fiS ■ AVP A dvanced P o w er Te c h n o l o g y APT50GF100BN 1000V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings:


    OCR Scan     		PDF APT50GF100BN -55nd O-247AD 780L

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm • High Input Impedance • H ig h S p e e d • Low Saturation Voltage : VQE sa t = 2.7V (Max.) (Iq = 50A)


    OCR Scan     		PDF MG50J1BS11

    APT50GL60BN

    Abstract: 25CC
    Text: A D V A NC ED PO WER T E C H N O L O G Y blE D • O a S ? ^ 1! OOOOflSM bTT * A V P ■ R A d v a n c W /< A P O W E R e d rJ m I T e c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR


    OCR Scan     		PDF APT50GL60BN 25CC

    Untitled

    Abstract: No abstract text available
    Text: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR


    OCR Scan     		PDF APT50GL60BN

    MG50J2YS50

    Abstract: transistor te 2305 mg50j V20-H IGBT MG50J2YS50
    Text: TOSHIBA MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4-FA ST -O N -TA B # 110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG50J2YS50 2-94D1A MG50J2YS50 transistor te 2305 mg50j V20-H IGBT MG50J2YS50

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode.


    OCR Scan     		PDF MG50J6ES50 TjS125Â

    P channel 50A IGBT

    Abstract: No abstract text available
    Text: SILICON N CHANNEL IGBT GT50J301 Unit in mm HIGH PO W ER SW ITCHIN G APPLICATIONS M O T O R CON TROL APPLICATIONS 2 0.5 MAX. 0 3 3 ±0.2 The 3rd Generation Enhancement-Mode High Speed : tf=0.30/us Max. Low Saturation Voltage : VcE(sat) = 2.7V (Max.) FRD Induded Between Em itter and Collector


    OCR Scan     		PDF GT50J301 30/us P channel 50A IGBT

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG50J2YS50 2-94D1A TjS125Â

    P channel 600v 50a IGBT

    Abstract: P channel 600v 30a IGBT P channel 50A IGBT MIG50J904H
    Text: TOSHIBA TENTATIVE MIG50J904H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J904H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Converter and Brake Power Circuits in One Package. Output Inverter Stage


    OCR Scan     		PDF MIG50J904H 0A/600V 15/is 0A/800V 961001EAA1 P channel 600v 50a IGBT P channel 600v 30a IGBT P channel 50A IGBT MIG50J904H

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q 6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0 .3 /iS Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES50 6ES50 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package.


    OCR Scan     		PDF MG50J6ES50 2-94A2A 961001EAA2 100//S*

    MG50N2YS9

    Abstract: P channel 50A IGBT
    Text: GTR MODULE_ SILICON N CHANNEL IGBT MG50N2YS9 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=l.Oys Max. trr=0.5ys(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) . Enhancement-Mode


    OCR Scan     		PDF MG50N2YS9 00A/AS MG50N2YS9 P channel 50A IGBT

    la7200

    Abstract: MG50N2YS
    Text: MG50N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1.Oys Max. trr=0.5<Js(Max.) . Low Saturation Voltage: VcE(sat)= 5.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG50N2YS1 El/08 la7200 MG50N2YS

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50J2YS50 MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 1 1 0 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG50J2YS50 2-94D1A 100//S*

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M f i R O M Y<;<5il HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B # 110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One


    OCR Scan     		PDF MG50J2YS50 2-94D1A

    td 4950

    Abstract: MG50J6ES50
    Text: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J6ES50 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • 4-0 5.5 ± 0.3 7-M4 The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG50J6ES50 G50J6ES50 2-94A2A 961001EAA2 td 4950 MG50J6ES50

    DC MOTOR CONTROL IGBT

    Abstract: ES50A
    Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE MG50Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES50A MG50Q ES50A 961001EAA1 DC MOTOR CONTROL IGBT ES50A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES50A 961001EAA1

    MG50N2YS9

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG50N2YS9 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf "1. 0/is Max. trr=0.5us(Max.) . Low Saturation Voltage: (sat:)~5.OV(Max .) . Enhancement-Mode . includes a CompLete Half Bridge in One


    OCR Scan     		PDF MG50N2YS9 MG50N2YS9

    on semiconductor 50-5G

    Abstract: No abstract text available
    Text: TOSHIBA M G50J6ES50 TOSHIBA GTR MODULE m n SILICON N CHANNEL IGBT i f i F <; ç n HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance, 6 IGBTs Built Into 1 Package. Enhancement-Mode.


    OCR Scan     		PDF G50J6ES50 on semiconductor 50-5G

    DIODE JS

    Abstract: MG50H2YS1
    Text: GTR MODULE SILICON N CHANNEL IGBT MG50H2YS1 HIGH POWER S W I T C H I N G A P P LICATIONS. M O T O R CONT R O L APPLICATIONS. FEATURES: . High In p u t Impedance . High Speed . . . . : t f =1. Ojjs Max. t r r = 0 .5 ms (Ma x .) Low S a t u r a t i o n V o lta g e : VcE ( s a t ) = 5 . OV (M;


    OCR Scan     		PDF MG50H2YS1 cio01 DIODE JS MG50H2YS1